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Ordering number : ENN3463B
2SK1460LS
N-Channel Silicon MOSFET
2SK1460LS
Ultrahigh-Speed Switching Applications
Features
* * *
Package Dimensions
unit : mm 2078C
[2SK1460LS]
10.0 3.2
3.5 7.2
Low ON-resistance. Ultrahigh-speed switching. Micaless package facilitating mounting.
4.5
2.8
16.1
16.0
3.6
0.9
1.2
14.0
1.2
0.75 123
2.4
0.7
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions 2.55 2.55
1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS)
Ratings 900 30 3.5 7 2.0 40 150 --55 to +150 Unit V V A A W W C C
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=1mA, VGS=0 VDS=900V, VGS=0 VGS=30V, VDS=0 VDS=10V, ID=1mA VDS=20V, ID=2A Ratings min 900 1.0 100 2.0 1.0 2.0 3.0 typ max Unit V mA nA V S
Marking : K1460
0.6
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N3001 TS IM TA-3433 / 61599 TH (KT) / 72597 TS (KOTO) / 6131 JN (KOTO) No.3463-1/4
2SK1460LS
Continued from preceding page.
Parameter Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol RDS(on) Ciss Coss Crss td(on) tr td(off) tf VSD Conditions ID=2A, VGS=10V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz ID=2A, VGS=10V, VDD=200V, RGS=50 ID=2A, VGS=10V, VDD=200V, RGS=50 ID=2A, VGS=10V, VDD=200V, RGS=50 ID=2A, VGS=10V, VDD=200V, RGS=50 IS=3.5A, VGS=0 Ratings min typ 2.8 700 300 170 15 35 200 65 1.8 max 3.6 Unit pF pF pF ns ns ns ns V
(Note) Be careful in handling the 2SK1460LS because it has no protection diode between gate and source.
Switching Time Test Circuit
VDD 200V ID=2A RL=100
VGS 10V PW=1s D.C.0.5%
D
VOUT
G
2SK1460LS
P.G
RGS 50
S
6
ID -- VDS
0 =1 GS V
Drain Current, ID -- A
10
ID -- VDS
=1 S VG
5
Drain Current, ID -- A
V
4
6V
8
0V
6V
5V
6
3
4
5V
2
4V
1
2
4V
3V
0 0 4 8 12 16 20 24 ITR01596 8 7 6 5 4 3 2 1 0 --60 0 0 10 20 30 40 50 60 ITR01597
Drain-to-Source Voltage, VDS -- V
8 7 6 5 4 3 2 1 0 0 2 4 6 8 10
ID -- VGS
Drain-to-Source Voltage, VDS -- V
ID -- Tc
VDS=20V
Tc= --25C
VGS=10V
Drain Current, ID -- A
25C 75C
Drain Current, ID -- A
V DS =
20V
10V
12
14
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
ITR01598
Case Temperature, Tc -- C
ITR01599
No.3463-2/4
2SK1460LS
5
VGS(off) -- Tc
VDS=10V ID=1mA
5 3 2
SW Time -- ID
VDD=200V VGS=10V P.W.=1s D.C0.5%
4
Switching Time, SW Time -- ns
Cutoff Voltage, VGS(off) -- V
td (off )
3
100 7 5 3 2
tf
tr
2
1
td(on)
5 7 2 3 5 7 2 ITR01601
0 --60
10 --40 --20 0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- C
5
1.0
10
ITR01600 8
Drain Current, ID -- A
RDS(on) -- VGS
Static Drain-to-Source On-State Resistance, RDS(on) --
Tc=25C ID=2A
RDS(on) -- Tc
Static Drain-to-Source On-State Resistance, RDS(on) --
7 6 5 4 3 2 1 0 --60
4
3
0V =1 GS V V 20
2
1 0 2 4 6 8 10 12 14
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
5
ITR01602 5
yfs -- ID
Case Temperature, Tc -- C
ITR01603
yfs -- ID
Forward Transfer Admittance, yfs -- S
Forward Transfer Admittance, yfs -- S
Tc=25C
VDS=20V
C 25
3 2
3 2
VDS=10V
20V
1.0 7 5 3 2
1.0 7 5 3 2
= Tc
5 --2
C
75
C
0.1 5 7 0.1 2 3 5 7 1.0 2 3 5
0.1
5 3 2
Ciss, Coss, Crss -- VDS
VGS=0 f=1MHz
Drain Current, ID -- A
10 ITR02940 10 7 5 3
7
5
7
0.1
2
3
5
7
1.0
2
3
5
Drain Current, ID -- A
7 10 ITR01604
ASO
IDP=7A
<5s
IDP=3.5A
10
s
Drain Current, ID -- A
Ciss, Coss, Crss -- pF
2 1.0 7 5 3 2 0.1 7 5 3 2
10
10 DC 100 ms Operation in op ms er this area is ati on limited by RDS(on).
1000 7 5 3 2
0
Ciss
1m
s
s
Cos
Cr
s
100 7 5 3 2 0 4 8 12 16 20 24
ss
Tc=25C Single pulse
2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 2
28
32
Drain-to-Source Voltage, VDS -- V
ITR01605
Drain-to-Source Voltage, VDS -- V
ITR01606
No.3463-3/4
2SK1460LS
2.4
PD -- Ta
Allowable Power Dissipation, PD -- W
50
PD -- Tc
Allowable Power Dissipation, PD -- W
2.0
40
1.6
No
1.2
30
he
at
sin
k
20
0.8
0.4
10
0 0 20 40 60 80 100 120 140 160
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- C
ITR01607
Case Temperature, Tc -- C
ITR01608
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2001. Specifications and information herein are subject to change without notice.
PS No.3463-4/4

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