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Transistors
2SC2480
Silicon NPN epitaxial planer type
Unit: mm
For high-frequency amplification / oscillation / mixing
0.40+0.10 -0.05 3
0.16+0.10 -0.06
1.50+0.25 -0.05
2.8+0.2 -0.3
I Features
* High transition frequency fT * Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
1 2 (0.95) (0.95) 1.90.1 2.90+0.20 -0.05 10
1.1+0.2 -0.1
(0.65)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Rating 30 20 3 50 150 150 -55 to +150
Unit V V V mA mW C C
1: Base 2: Emitter 3: Collector
0 to 0.1
I Absolute Maximum Ratings Ta = 25C
1.1+0.3 -0.1
JEDEC: TO-236 EIAJ: SC-59 Mini Type Package
Marking Symbol: R
I Electrical Characteristics Ta = 25C 3C
Parameter Collector to base voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Transition frequency
*
Symbol VCBO VEBO hFE VBE fT Cre Crb PG
Conditions IC = 100 A, IE = 0 IE = 10 A, IC = 0 VCB = 10 V, IE = -2 mA VCB = 10 V, IE = -2 mA VCB = 10 V, IE = -15 mA, f = 200 MHz VCB = 10 V, IE = -1 mA, f = 10.7 MHz VCE= 6 V, IC = 0, f = 1 MHz VCB = 10 V, IE = -1 mA, f = 200 MHz
Min 30 3 25
Typ
Max
Unit V V
250 720 mV 1 600 1.5 MHz pF pF dB
800
1 300 1 0.8 20
Common emitter reverse transfer capacitance Power gain Note) *: Rank classification Rank fT (MHz) Marking symbol T
S
No-rank
800 to 1 400 1 000 to 1 600 800 to 1 600 RT RS R
Product of no-rank is not classified and have no indication for rank.
0.40.2
5
1
2SC2480
PC Ta
240 24 IB = 300 A 200 20
Transistors
IC VCE
Ta = 25C 24 VCE = 10 V Ta = 25C 20
IC IB
Collector power dissipation PC (mW)
Collector current IC (mA)
Collector current IC (mA)
250 A 16 200 A 12 150 A 100 A 50 A
160
16
120
12
80
8
8
40
4
4
0
0
40
80
120
160
0
0 0 2 4 6 8 10 12 14 16 18
0
100
200
300
400
500
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base current IB (A)
IB VBE
400 350 300 VCE = 10 V Ta = 25C
60
IC VBE
25C 50 Ta = 75C VCE = 10 V -25C 240
hFE IC
VCE = 10 V
250 200 150 100 50 0
40
Forward current transfer ratio hFE
200
Collector current IC (mA)
Base current IB (A)
160 Ta = 75C 120 25C -25C
30
20
80
10
40
0
0.4
0.8
1.2
1.6
2.0
0
0
0.4
0.8
1.2
1.6
2.0
0 0.1
0.3
1
3
10
30
100
Base to emitter voltage VBE (V)
Base to emitter voltage VBE (V)
Collector current IC (mA)
VCE(sat) IC
Collector to emitter saturation voltage VCE(sat) (V)
100 30 10
3 1
fT I E
1 600 1 400
Cre VCE
Common emitter reverse transfer capacitance Cre (pF)
VCB = 10 V Ta = 25C
2.4 IC = 1 mA f = 10.7 MHz Ta = 25C
IC / IB = 10
Transition frequency fT (MHz)
2.0
1 200 1 000 800 600 400 200 0 - 0.1 - 0.3
1.6
1.2
0.3 0.1 0.03 0.01 0.1 25C
Ta = 75C
0.8
-25C
0.4
0.3
1
3
10
30
100
-1
-3
-10
-30
-100
0 0.1
0.3
1
3
10
30
100
Collector current IC (mA)
Emitter current IE (mA)
Collector to emitter voltage VCE (V)
2
Transistors
Zrb IE
120 VCB = 10 V f = 2 MHz Ta = 25C
2SC2480
PG IE
40 35 30 VCB = 10 V f = 100 MHz Rg = 50 Ta = 25C
12
NF IE
VCB = 10 V f = 100 MHz Rg = 50 Ta = 25C
Reverse transfer impedance Zrb ()
100
10
80
Noise figure NF (dB)
-1 -3 -10 -30 -100
Power gain PG (dB)
8
25 20 15 10
60
6
40
4
20
2
5
0 - 0.1 - 0.2- 0.3 - 0.5
-1
-2 -3 -5
-10
0 - 0.1 - 0.3
0 - 0.1 - 0.3
-1
-3
-10
-30
-100
Emitter current IE (mA)
Emitter current IE (mA)
Emitter current IE (mA)
bib gib
0
0
brb grb
48 300 500
bfb gfb
200
-10
- 0.4
Forward transfer susceptance bfb (mS)
Reverse transfer susceptance brb (mS)
yib = gib + jbib VCB = 10 V
yrb = grb + jbrb VCB = 10 V
yfb = gfb + jbfb VCB = 10 V 40 f = 200 MHz IE = -5 mA 32 -2 mA 300 500 600 16 900
Input susceptance bib (mS)
-20
IE = -2 mA f = 900 MHz -5 mA
- 0.8 600 -1.2 f = 900 MHz -2 mA IE = -5 mA
-30
600 500 300 200
24
-40
-1.6
-50
-2.0
8
-60
0
10
20
30
40
50
-2.4 -1.0
- 0.8
- 0.6
- 0.4
- 0.2
0
0 -60
-40
-20
0
20
40
Input conductance gib (mS)
Reverse transfer conductance grb (mS)
Forward transfer conductance gfb (mS)
bob gob
12 yob = gob + jbob VCE = 10 V 10 900
Output susceptance bob (mS)
8
600 IE = -2 mA 500 -5 mA
6
4
300
2
f = 200 MHz
0
0
0.4
0.8
1.2
1.6
2.0
Output conductance gob (mS)
3
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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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