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| SPICE Device Model SI3447DV Vishay Siliconix P-Channel 1.8V (G-S) MOSFET CHARACTERISTICS * P-Channel Vertical DMOS * Macro Model (Subcircuit Model) * Level 3 MOS * Apply for both Linear and Switching Application * Accurate over the -55 to 125C Temperature Range * Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 to 125C temperature ranges under the pulsed 0-V to 5-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 71520 S-50383Rev. B, 21-Mar-05 www.vishay.com 1 SPICE Device Model SI3447DV Vishay Siliconix SPECIFICATIONS (TJ = 25C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage On-State Drain Currenta VGS(th) ID(on) VDS = VGS, ID = -250 A VDS -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -5.2 A Drain-Source On-State Resistancea rDS(on) VGS = -2.5 V, ID = -4.4 A VGS = -1.8 V, ID = -2.0 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = -10 V, ID = -5.2 A IS = -1.7 A, VGS = 0 V 0.82 78 0.037 0.055 0.082 14 0.80 S V V A Symbol Test Condition Typical Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -1.7 A, di/dt = 100 A/s VDD = -6 V, RL = 10 ID -1 A, VGEN = -4.5 V, RG = 6 VDS = -6 V, VGS = -4.5 V, ID = -5.2 A 14 3.5 2.5 59 28 120 21 57 ns nC Notes a. Pulse test; pulse width 300 s, duty cycle 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 71520 S-50383Rev. B, 21-Mar-05 SPICE Device Model SI3447DV Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25C UNLESS OTHERWISE NOTED) Document Number: 71520 S-50383Rev. B, 21-Mar-05 www.vishay.com 3 |
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