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| SI1426DH New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 0.115 @ VGS = 4.5 V 2.9 rDS(on) (W) 0.075 @ VGS = 10 V ID (A) 3.6 D TrenchFETr Power MOSFET D Thermally Enhanced SC-70 Package D PWM Optimized APPLICATIONS D Boost Converter in Portable Devices - Low Gate Charge (3 nC) D Low Current Synchronous Rectifier SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code D 2 5 D AC G 3 4 S XX YY Lot Traceability and Date Code Part # Code Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C ID TA = 85_C IDM IS 1.3 1.6 0.8 -55 to 150 2.6 10 0.8 1.0 0.5 W _C 2.1 A Symbol VDS VGS 5 secs 30 Steady State Unit V "20 3.6 2.8 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71805 S-05803--Rev. A, 18-Feb-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 60 100 34 Maximum 80 125 45 Unit _C/W C/W 1 SI1426DH Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 85_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 3.6 A VGS = 4.5 V, ID = 2.0 A VDS = 10 V, ID = 3.6 A IS = 1.3 A, VGS = 0 V 10 0.061 0.092 5 0.78 1.2 0.075 0.115 0.80 2.5 "100 1 5 V nA mA m A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.4 A. di/dt = 100/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS = 15 V, VGS = 4.5 V, ID = 3.6 A 1.9 0.75 0.75 10 12 15 9 40 15 18 22 15 70 ns 3 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 10 thru 5 V 8 I D - Drain Current (A) I D - Drain Current (A) 4V 8 10 Transfer Characteristics 6 6 4 3V 2 4 TC = 125_C 2 25_C -55_C 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 71805 S-05803--Rev. A, 18-Feb-02 2 SI1426DH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.16 r DS(on) - On-Resistance ( W ) 250 Vishay Siliconix Capacitance 0.12 VGS = 4.5 V 0.08 VGS = 10 V C - Capacitance (pF) 200 Ciss 150 100 Crss Coss 0.04 50 0.00 0 2 4 6 8 10 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 3.6 A 8 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.6 A r DS(on) - On-Resistance (W) (Normalized) 1.6 1.4 6 1.2 4 1.0 2 0.8 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 0.20 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.16 ID = 1 A 0.12 ID = 3.6 A I S - Source Current (A) 1 TJ = 150_C TJ = 25_C 0.08 0.04 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71805 S-05803--Rev. A, 18-Feb-02 www.vishay.com 3 SI1426DH Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 30 25 ID = 250 mA -0.0 Power (W) 20 Single Pulse Power 0.2 V GS(th) Variance (V) -0.2 15 -0.4 10 -0.6 5 -0.8 -50 -25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA =100_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71805 S-05803--Rev. A, 18-Feb-02 |
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