View M54539P_291072.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MITSUBISHI SEMICONDUCTOR
M54539P
6-UNIT 700mA TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION M54539P six-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply. PIN CONFIGURATION (TOP VIEW)
NC 1 IN1 2 IN2 3 IN3 4 INPUTS IN4 5
16 VCC 15 O1 14 O2 13 O3 12 O4 11 O5 10 O6 9 COM COMMON OUTPUTS
FEATURES q Medium breakdown voltage (BVCEO 20V) q High-current driving (Ic(max) = 700mA) q With output clamping diodes q Wide operating temperature range (Ta = -20 to +75C)
IN5 6 IN6 7 GND 8
Outline 16P4(P)
NC : No connection
APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and drives of thermal printer
CIRCUIT SCHEMATIC
200 VCC COM 2k INPUT OUTPUT
FUNCTION The M54539P have six circuits consisting of NPN transistors. Resistance of 2k is connected to the inputs. The output transistor emitters are connected to the GND pin (pin 8). A spick-killer clamping diode is provided between each collector and COM pin (pin 9), VCC is connected to pin 16. The collector current is 700 mA maximum. Collector-emitter supply voltage is 20V maximum.
GND 20k 2k
The six circuits share the VCC, COM and GND. The diodes shown by broken line are parasite diodes and must not be used. Unit :
ABSOLUTE MAXIMUM RATINGS
Symbol VCC VCEO IC VI VR IF Pd Topr Tstg Parameter Supply voltage Collector-emitter voltage Collector current
(Unless otherwise noted, Ta = -20 ~ +75C)
Conditions Output, H Current per circuit output, L
Ratings 10 -0.5 ~ +20 700 -0.5 ~ +10 20 700 350 1.47 -20 ~ +75 -55 ~ +125
Unit V V mA V V mA W C C
Aug. 1999
Input voltage Clamping diode reverse voltage Clamping diode forward current Power dissipation Operating temperature Storage temperature Pulse Width 35ms, Duty Cycle 5% Ta = 25C, when mounted on board
MITSUBISHI SEMICONDUCTOR
M54539P
6-UNIT 700mA TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS
Symbol VCC VO Supply voltage Output voltage VCC = 6.5V, The three outputs conducting simultaneously Collector current Percent duty cycle less than 20% VCC = 6.5V, The three outputs per channel conducting simultaneously Percent duty cycle less than 90% "H" input voltage IC 450mA "L" input voltage Parameter
(Unless otherwise noted, Ta = -20 ~ +75C)
min 3 0 0 0 3 0
Limits typ 5 -- -- -- -- --
max 7 20 700
Unit V V
IC
mA 200 6 0.3 V V
VIH VIL
ELECTRICAL CHARACTERISTICS
Symbol V (BR) CEO VCE (sat) II IR VF ICC hFE Parameter
(Unless otherwise noted, Ta = -20 ~ +75C)
Test conditions VCC = 7V, ICEO = 100A
Limits min 20 -- -- -- -- -- -- 3000 typ+ -- 0.46 0.2 0.75 -- 1.5 27.5 8000 max -- 0.8 0.45 1.4 100 2.7 50 --
Unit V V mA A V mA --
Collector-emitter breakdown voltage
VI = 3V, VCC = 5V, IC = 450mA Collector-emitter saturation voltage VI = 3V, VCC = 5V, IC = 200mA Input current Clamping diode reverse current Clamping diode forward voltage Supply current DC amplification factor VCC = 7V, VI = 3.2V VR = 20V IF = 350mA VCC = 7V, VI = 3.2V (Per operating one circuit) VCE = 4V, VCC = 6V, IC = 300mA, Ta = 25C
+ : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C)
Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions min -- -- Limits typ 16 1000 max -- -- Unit ns ns
NOTE 1 TEST CIRCUIT
INPUT VCC Measured device OPEN PG 50 CL OUTPUT VO
TIMING DIAGRAM
50%
RL
50%
INPUT
OUTPUT 50% 50%
ton
(1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, ZO = 50 VP = 3VP-P (2) Input-output conditions : RL = 22.5, VO = 10V, VCC = 5V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes
toff
Aug. 1999
MITSUBISHI SEMICONDUCTOR
M54539P
6-UNIT 700mA TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Output Saturation Voltage Collector Current Characteristics 800
Thermal Derating Factor Characteristics 2.0
Power dissipation Pd (W)
1.5
Collector current Ic (mA)
600
1.0
400
VI = 3V VCC = 5V Ta = 75C Ta = 25C Ta = -20C
0.5
200
0
0
25
50
75
100
0
0
0.2
0.4
0.6
0.8
1.0
Ambient temperature Ta (C)
Output saturation voltage VCE (sat) (V)
Duty-Cycle-Collector Characteristics 800 1 800
Duty-Cycle-Collector Characteristics
Collector current Ic (mA)
Collector current Ic (mA)
600
2 3 65 4
600
1
400
200
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneouslyoperated circuit. *VCC = 6.5V *Ta = 25C
400
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneouslyoperated circuit. *VCC = 6.5V *Ta = 75C
2 3
200
65
4
0
0
20
40
60
80
100
0
0
20
40
60
80
100
Duty cycle (%) DC Amplification Factor Collector Current Characteristics 105
7 5 3 VCC = 6V VCE = 4V
Ta = 75C Ta = 25C Ta = -20C
Duty cycle (%)
Grounded Emitter Transfer Characteristics 800
DC amplification factor hFE
Collector current Ic (mA)
600
VCC = 6V VCE = 4V
Ta = 75C Ta = 25C Ta = -20C
104
7 5 3
400
200
103 1 10
3
5 7 102
3
5 7 103
0
0
0.5
1.0
1.5
2.0
2.5
Collector current Ic (mA)
Input voltage VI (V)
Aug. 1999
MITSUBISHI SEMICONDUCTOR
M54539P
6-UNIT 700mA TRANSISTOR ARRAY WITH CLAMP DIODE
Input Characteristics 5
VCC = 7V
Ta = 75C Ta = 25C Ta = -20C
Supply Current Characteristics 50
VI = 3.2V
Ta = 75C Ta = 25C Ta = -20C
3
Supply current Icc (mA)
4
Input current II (mA)
40
30
2
20
1
10
0
0
2
4
6
8
10
0
0
2
4
6
8
10
Input voltage VI (V)
Supply voltage VCC (V)
Clamping Diode Characteristics 800
Forward bias current IF (mA)
Ta = 75C Ta = 25C Ta = -20C
600
400
200
0
0
0.5
1.0
1.5
2.0
2.5
Forward bias voltage VF (V)
Aug. 1999

▲Up To Search▲

Price & Availability of M54539P

	To Download M54539P Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .