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| FDP7042L / FDB7042L April 2001 FDP7042L / FDB7042L N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) . Features * 50 A, 30 V. RDS(ON) = 9 m @ VGS = 4.5 V RDS(ON) = 7.5 m @ VGS = 10 V * Critical DC electrical parameters specified at elevated temperature * High performance trench technology for extremely low RDS(ON) * 175C maximum junction temperature rating Applications * Synchronous rectifier * DC/DC converter D D G G D S TO-220 FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 12 (Note 1) (Note 1) Units V V A W WC C 50 150 83 0.48 -65 to +175 Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Thermal Characteristics RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.8 62.5 C/W C/W Package Marking and Ordering Information Device Marking FDB7042L FDP7042L Device FDB7042L FDP7042L Reel Size 13'' Tube Tape width 24mm n/a Quantity 800 units 45 2000 Fairchild Semiconductor Corporation FDP7042L Rev C(W) FDP7042L / FDB7042L Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 12 V, VGS = -12 V VGS = 0 V VDS = 0 V VDS = 0 V Min 30 Typ Max Units V Off Characteristics 24 1 100 -100 mV/C A nA nA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 4.5 V, ID = 25A ID = 25A VGS = 10 V, VGS= 4.5 V, ID =25A, TJ=125C VGS = 4.5 V, VDS = 5V, VDS = 10 V ID = 25 A 0.8 1.2 -4.1 6.2 5.5 9.6 2 V mV/C 9 7.5 16 m A ID(on) gFS On-State Drain Current Forward Transconductance 60 117 S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) 2418 VDS = 15 V, V GS = 0 V, f = 1.0 MHz 549 243 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge 21 VDD = 15 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 20 60 30 32 VDS = 15 V, ID = 50 A, VGS = 4.5 V 10 9 34 32 96 48 51 ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD Notes: 1. Maximum continuous current is limited by the package. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 25 A Voltage 50 (Note 2) A V 0.8 1.3 FDP7042L Rev C(W) FDP7042L / FDB7042L Typical Characteristics 150 2 VGS = 4.5V 4.0V 3.5V 1.8 VGS = 2.5V 3.0V 1.6 1.4 3.0V 3.5V 1.2 2.5V 1 0.8 0 1 2 3 4 5 0 30 60 90 120 150 4.0V 4.5V 120 90 60 30 0 VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.025 2 1.8 1.6 1.4 1.2 1 0.8 ID =25A VGS = 4.5V ID = 25 A 0.02 0.015 TA = 125 C 0.01 TA = 25 C o o 0.005 0.6 0.4 -50 -25 0 25 50 75 100 o 0 125 150 175 2 2.5 3 3.5 4 4.5 5 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. 80 VDS = 5V 60 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V 10 TA = 125 C 1 25 C -55 C 0.1 o o o 40 o TA = 125 C 20 25 C 0.01 -55 C o o 0 1 1.5 2 2.5 3 0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP7042L Rev C(W) FDP7042L / FDB7042L Typical Characteristics 5 ID = 50A 4 15V 3 VDS = 5V 10V 6000 5000 CISS 4000 3000 f = 1MHz VGS = 0 V 2 2000 1 COSS 1000 CRSS 0 0 5 10 15 20 25 30 35 0 0 6 12 18 24 30 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 1000 Figure 8. Capacitance Characteristics. 1000 SINGLE PULSE RJC = 1.8C/W TC = 25C 800 100 RDS(ON) LIMIT 1ms 10ms 100ms DC 100s 600 400 10 VGS = 4.5V SINGLE PULSE RJC = 1.8 C/W TC = 25 C o o 200 1 0.1 1 10 100 0 1 10 t1, TIME (sec) 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 0.2 0.1 RJC(t) = r(t) + RJC RJC = 1.8 C/W P(pk) t1 t2 TJ - TC = P * RJC(t) Duty Cycle, D = t1 / t2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDP7042L Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM Star* PowerTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H1 |
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