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SIMOPAC(R) Module
BSM 111 AR
VDS = 100 V ID = 200 A R DS(on) = 8.5 m
q q q q q q
Power module Single switch N channel Enhancement mode Package with insulated metal base plate 1) Package outline/Circuit diagram: 1
Type BSM 111 AR Maximum Ratings Parameter Drain-source voltage
Ordering Code C67076-S1013-A2
Symbol
Values 100 100 20 200 600 - 55 ... + 150 700 0.18 2500 16 11 F 55/150/56
Unit V
VDS VDGR VGS ID ID puls Tj, Tstg Ptot RthJC Vis
- - - -
Drain-gate voltage, RGS = 20 k Gate-source voltage Continuous drain current, TC = 25 C Pulsed drain current, TC = 25 C Operating and storage temperature range Power dissipation, TC = 25 C Thermal resistance Chip-case Insulation test voltage2), t = 1 min. Creepage distance, drain-source Clearance, drain-source DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
1) 2)
A C W K/W Vac mm -
See chapter Package Outline and Circuit Diagrams. Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1.
Semiconductor Group
24
03.96
BSM 111 AR
Electrical Characteristics at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VDS = VGS, ID = 1 mA Zero gate voltage drain current VDS = 100 V, VGS = 0 Tj = 25 C Tj = 125 C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-state resistance VGS = 10 V, ID = 130 A Dynamic Characteristics Forward transconductance Values typ. max. Unit
V(BR)DSS
100 - 3.0 - 4.0
V
VGS(th)
2.1
I DSS
- - 50 300 10 7 250 1000
A
IGS
- 100
nA m - 8.5
RDS(on)
VDS 2 x ID x RDS(on) max., ID = 130 A
Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 , VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Turn-on time ton (ton = td (on) + tr) VCC = 50 V, VGS = 10 V ID = 130 A, RGS = 3.3 Turn-off time toff (toff = td (off) + tf) VCC = 50 V, VGS = 10 V ID = 130 A, RGS = 3.3
gfs Ciss Coss Crss td (on) tr td (off) tf
60 - - - - - - -
75 10 5 1.8 280 220 220 60
- 13 7.5 2.7 - - - -
S nF
ns
Semiconductor Group
25
BSM 111 AR
Electrical Characteristics (cont'd) at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Reverse diode Continuous reverse drain current TC = 25 C Pulsed reverse drain current TC = 25 C Diode forward on-voltage IF = 400 A , VGS = 0 Reverse recovery time IF = IS, diF/dt = 100 A/ s, VR = 30 V Reverse recovery charge IF = IS, diF/dt = 100 A/ s, VR = 30 V Values typ. max. Unit
IS
- - - 1.25 400 3.5 200 600
A
ISM
-
VSD
- 1.6
V ns - - C -
trr Qrr
Semiconductor Group
26
BSM 111 AR
Characteristics at Tj = 25 C, unless otherwise specified. Power dissipation Ptot = f (TC) parameter: Tj = 150 C Typ. output characteristics ID = f (VDS) parameter: = 80 s pulse test
Safe operating area ID = f (VDS) parameter: single pulse, TC = 25 C Tj 150 C
Typ. transfer characteristic ID = f (VGS) parameter: = 80 s pulse test, VDS = 25 V
Semiconductor Group
27
BSM 111 AR
Continuous drain-source current ID = f (TC), parameter: VGS 10 V, T j = 150 C
Drain-source breakdown voltage V(BR)DSS (Tj) = b x V(BR)DSS (25 C)
Drain source on-state resistance RDS(on) = f (Tj) parameter: ID = 130 A; VGS = 10 V (spread)
Typical capacitances C = f (VDS) parameter: VGS = 0, f = 1 MHz
Semiconductor Group
28
BSM 111 AR
Forward characteristics of reverse diode IF = f (VSD) parameter: Tj, tp = 80 s (spread)
Semiconductor Group
29
BSM 111 AR
Transient thermal impedance ZthJC = f (tp) parameter: D = tp/T
Typ. gate charge VGS = f (QGate) parameter: IDputs = 300 A
Semiconductor Group
30

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