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Data Sheet SST 29LE010 3.0V-only 1 Megabit Page Mode EEPROM June 1997 (c)1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice. 6.1 SST 29LE010 3.0V-only 1 Megabit Page Mode EEPROM Features: Single 3.0-Volt Read and Write Operations CMOS SuperFlash EEPROM Technology Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention Low Power Consumption: Active Current: 10 mA (typical) Standby Current: 10 A (typical) Fast Page-Write Operation 128 Bytes per Page, 1024 Pages Page-Write Cycle: 5 ms (typical) Complete Memory Rewrite: 5 sec (typical) Effective Byte-write Cycle Time: 39 s (typical) Fast Access Time: 150 and 200 ns Latched Address and Data Automatic Write Timing with Internal Vpp Generation End of Write Detection Toggle Bit Data# Polling Hardware and Software Data Protection TTL I/O Compatibility JEDEC Standard Byte-wide EEPROM Pinouts Packages Available 32-Pin TSOP 32-Lead PLCC 32 Pin Plastic DIP improves flexibility while lowering the cost for pr o gram, data, and configuration storage applica-tions. To meet high density, surface mount requir ments, e the 29LE010 is offered in 32-pin TSOP and 32-lead PLCC packages. A 600-mil, 32-pin PDIP package is also available. See Figures 2A and 2B for pinouts. Device Operation The SST page mode EEPROM offers in-circuit electrical write capability. The 29LE010 does not require separate erase and program operations. The internally timed write cycle executes both erase and program transparently to the user. The 29LE010 has industry standard optional Software Data Protection, which SST recommends always to be enabled. The 29LE010 is compatible with industry standard EEPROM pinouts and fun ctionality. Read The read operation of the 29LE010 is controlled by CE# and OE#, both have to be low for the system to obtain data from the outputs. CE# is used for device selection. When CE# is high, the chip is deselected and only standby power is consumed. OE# is the output control and is used to gate data from the output pins. The data bus is in high mpedance state i when either CE# or OE# is high. Refer to the read cycle timing diagram for further details (Figure 3). Write The page write to the SST29LE010 should always use the JEDEC Standard Software Data Prote ction (SDP) 3-byte command sequence. The 29LE010 Product Description The 29LE010 is a 128K x 8 CMOS page mode EEPROM manufactured with SST's proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturabi lity compared with alternate approaches. The 29LE010 writes with a 3.0-volt-only power supply. (V : 3.0V CC to 3.6V) Internal erase/program is transparent to the user. The 29LE010 conforms to JEDEC standard pinouts for byte-wide memories. Featuring high performance page write, the 29LE010 provides a typical byte-write time of 39 sec. The entire memory, i.e., 128K bytes, can be written page by page in as little as 5 seconds, when using interface features such as Toggle Bit or Data# Polling to indicate the completion of a write cycle. To protect against inadvertent write, the 29LE010 has on-chip hardware and software data protection schemes. Designed, manufa ctured, and tested for a wide spectrum of applica tions, the 29LE010 is offered with a guaranteed page-write endurance of 104 or 103 cycles. Data retention is rated at greater than 100 years. The 29LE010 is suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, the 29LE010 significantly improves performance and reliability, while lowering power consumption, when compared with 5 -volt EEPROM or EPROM approaches. The 29LE010 (c)1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice. 6.2 SST 29LE010 3.0V-only 1 Megabit Page Mode EEPROM contains the optional JEDEC approved Software Data Protection scheme. SST reco mmends that SDP always be enabled, thus, the de scription of the write operations will be given using the SDP enabled format. The 3-byte SDP Enable and SDP Write commands are identical; there fore, any time a SDP Write command is issued, software data protection is automat ically assured. The first time the 3-byte SDP command is given, the device becomes SDP enabled. Subsequent issuance of the same command bypasses the data protection for the page being written. At the end of the desired page write, the entire device remains protected. For additional descriptions, please see the application notes on "The Proper Use of JEDEC Standard Software Data Protection" and "Protecting Against Unintentional Writes When Using Single Power Supply Flash Memories" in this data book. The write operation consists of three steps. Step 1 is the three byte load sequence for Software Data Protection. Step 2 is the byte-load cycle to a page buffer of the 29LE010. Steps 1 and 2 use the same timing for both operations. Step 3 is an nternally i controlled write cycle for writing the data loaded in the page buffer into the memory array for nonvolatile storage. During both the SDP 3-byte load sequence and the byte-load cycle, the addresses are latched by the falling edge of either CE# or WE#, whichever occurs last. The data is latched by the rising edge of either CE# or WE#, whichever occurs first. The internal write cycle is initiated by the T BLCO timer after the rising edge of WE# or CE#, whichever occurs first. The write cycle, once initiated, will continue to completion, typically within 5 ms. See Figures 4 and 5 for WE# and CE# controlled page write cycle timing diagrams and Figures 14 and 16 for flowcharts. The write operation has three functional cycles: the Software Data Protection load sequence, the page load cycle, and the internal write cycle. The Software Data Protection consists of a specific three byte load sequence that allows writing to the selected page and will leave the 29LE010 pr tected at the end of o the page write. The page load cycle consists of loading 1 to 128 bytes of data into the page buffer. The internal write cycle co nsists of the TBLCO timeout and the write timer op eration. During the write operation, the only valid reads are Data# Polling and Toggle Bit. The page-write operation allows the loading of up to 128 bytes of data into the page buffer of the 29LE010 before the initiation of the internal write cycle. During the internal write cycle, all the data in the page buffer is written simultaneously into the memory array. Hence, the page-write feature of 29LE010 allows the entire memory to be written in as little as 5 seconds. During the internal write c ycle, the host is free to perform additional tasks, such as to fetch data from other locations in the system to set up the write to the next page. In each page-write operation, all the bytes that are loaded into the page buffer must have the same page address, i.e. A 7 through A16. Any byte not loaded with user data will be written to FF. See Figures 4 and 5 for the page-write cycle ti ming diagrams. If after the completion of the 3-byte SDP load sequence or the initial byte-load cycle, the host loads a second byte into the page buffer within a byte-load cycle time (TBLC ) of 100 s, the 29LE010 will stay in the page load cycle. Add itional bytes are then loaded consecutively. The page load cycle will be terminated if no additional byte is loaded into the page buffer within 200 s (T BLCO ) from the last byteload cycle, i.e., no subsequent WE# or CE# high-tolow transition after the last rising edge of WE# or CE#. Data in the page buffer can be changed by a subsequent byte-load cycle. The page load period can continue indefinitely, as long as the host continues to load the device within the byte-load cycle time of 100 s. The page to be loaded is determined by the page address of the last byte loaded. Software Chip-Erase The 29LE010 provides a chip-erase operation, which allows the user to simultaneously clear the entire memory array to the "1" state. This is useful when the entire device must be quickly erased. The Software Chip-Erase operation is initiated by using a specific six byte-load sequence. After the load sequence, the device enters into an inte rnally timed cycle similar to the write cycle. During the erase operation, the only valid read is Toggle (c)1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice. 6.3 SST 29LE010 3.0V-only 1 Megabit Page Mode EEPROM Bit. See Table 4 for the load sequence, Figure 9 for timing diagram, and Figure 18 for the flo wchart. Write Operation Status Detection The 29LE010 provides two software means to de tect the completion of a write cycle, in order to op timize the system write cycle time. The software detection includes two status bits: Data# Polling (DQ) and 7 Toggle Bit (DQ6). The end of write detection mode is enabled after the rising WE# or CE# whichever occurs first, which initiates the nternal write cycle. i The actual completion of the nonvolatile write is asynchronous with the system; therefore, either a Data# Polling or Toggle Bit read may be simult a neous with the completion of the write cycle. If this occurs, the system may possibly get an erroneous result, i.e., valid data may appear to conflict with either DQ7 or DQ6. In order to prevent spurious rejection, if an erroneous result occurs, the sofware t routine should include a loop to read the ac cessed location an additional two (2) times. If both reads are valid, then the device has co mpleted the write cycle, otherwise the rejection is valid. Data# Polling (DQ 7) When the 29LE010 is in the internal write cycle, any attempt to read DQ7 of the last byte loaded during the byte-load cycle will receive the co mplement of the true data. Once the write cycle is completed, DQ7 will show true data. The device is then ready for the next operation. See Figure 6 for Data# Polling timing diagram and Figure 15 for a flowchart. Toggle Bit (DQ 6) During the internal write cycle, any consecutive attempts to read DQ6 will produce alternating 0's and 1's, i.e., toggling between 0 and 1. When the write cycle is completed, the toggling will stop. The device is then ready for the next operation. See Figure 7 for Toggle Bit timing diagram and Figure 15 for a flowchart. The initial read of the Toggle Bit will typically be a "1". Data Protection The 29LE010 provides both hardware and sofware t features to protect nonvolatile data from in advertent writes. Hardware Data Protection Noise/Glitch Protection: A WE# or CE# pulse of less than 5 ns will not initiate a write cycle. VCC Power Up/Down Detection The write operation : is inhibited when VCC is less than 2.5V. Write Inhibit Mode: Forcing OE# low, CE# high, or WE# high will inhibit the write operation. This pr e vents inadvertent writes during power-up or powerdown. Software Data Protection (SDP) The 29LE010 provides the JEDEC approved o ptional software data protection scheme for all data alteration operations, i.e., write and chip erase. With this scheme, any write operation requires the inclusion of a series of three byte-load operations to precede the data loading operation. The three byteload sequence is used to initiate the write c ycle, providing optimal protection from inadvertent write operations, e.g., during the system power-up or power-down. The 29LE010 is shipped with the software data protection di abled. s The software protection scheme can be enabled by applying a three-byte sequence to the device, during a page-load cycle (Figures 4 and 5). The device will then be automatically set into the data protect mode. Any subsequent write operation will require the preceding three-byte sequence. See Table 4 for the specific software command codes and Figures 4 and 8 for the timing diagrams. To set the device into the unprotected mode, a six-byte sequence is required. See Table 4 for the specific codes and Figure 8 for the timing diagram. If a write is attempted while SDP is enabled the device will be in a non-accessible state for ~ 300 s. SST recommends Software Data Protection always be enabled. See Figure 16 for flowcharts. The 29LE010 Software Data Protection is a global command, protecting (or unprotecting) all pages in the entire memory array once enabled (or di sabled). Therefore using SDP for a single page write will enable SDP for the entire array. Single pages by themselves cannot be SDP enabled or disabled. Single power supply reprogrammable nonvolatile memories may be unintentionally altered. SST strongly recommends that Software Data Prote ction (SDP) always be enabled. The 29LE010 should be (c)1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice. 6.4 SST 29LE010 3.0V-only 1 Megabit Page Mode EEPROM programmed using the SDP command sequence. SST recommends the SDP Disable Command Sequence not be issued to the device prior to wri ting. Please refer to the following Application Notes located at the back of this databook for more information on using SDP: * * Protecting Against Unintentional Writes When Using Single Power Supply Flash Memories The Proper Use of JEDEC Standard Software Data Protection entry and read timing diagram and Figure 17 for the ID entry command sequence flowchart. The manufacturer and device codes are the same for both operations. Table 1: Product Identification Table Byte Data Manufacturers Code 0000 H BF H Device Code 0001 H 08 H Product Identification Mode Exit In order to return to the standard read mode, the Software Product Identification mode must be e xited. Exiting is accomplished by issuing the Soft are ID w Exit (reset) operation, which returns the device to the read operation. The reset oper tion may also be a used to reset the device to the read mode after an inadvertent transient condition that apparently causes the device to behave a bnormally, e.g., not read correctly. See Table 4 for software command codes, Figure 11 for timing wavefrom and Figure 17 for a flowchart. Product Identification The product identification mode identifies the d evice as the 29LE010 and manufacturer as SST. This mode may be accessed by hardware or sofware t operations. The hardware operation is typi cally used by a programmer to identify the co rrect algorithm for the 29LE010. Users may wish to use the software product identification operation to identify the part (i.e., using the device code) when using multiple manufacturers in the same socket. For details, see Table 3 for hardware operation or Table 4 for software operation, Figure 10 for the software ID X-Decoder 1,048,576 Bit EEPROM Cell Array A16 - A0 Address buffer & Latches Y-Decoder and Page Latches CE# OE# WE# Control Logic I/O Buffers and Data Latches DQ7 - DQ0 Figure 1: Functional Block Diagram of SST 29LE010 (c)1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice. 6.5 SST 29LE010 3.0V-only 1 Megabit Page Mode EEPROM A11 A9 A8 A13 A14 N/C WE# Vcc N/C A16 A15 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Standard Pinout Top View Die up 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 Vss DQ2 DQ1 DQ0 A0 A1 A2 A3 Figure 2A: Pin Assignments for 32-pin TSOP Pac kages N/C A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 23 22 21 20 19 18 17 Vcc WE# N/C A14 A13 A8 A9 A11 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 DQ1 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 5 6 7 8 9 10 11 12 13 4 A12 A15 A16 N/C Vcc WE# N/C 3 2 1 32 31 30 29 28 27 26 A14 A13 A8 A9 A11 OE# A10 CE# DQ7 32-Pin PDIP Top View 24 32-Lead PLCC Top View 25 24 23 22 21 14 15 16 17 18 19 20 DQ2 Vss DQ4 DQ6 DQ3 DQ5 Figure 2B: Pin Assignments for 32-pin Plastic DIPs and 32-lead PLCCs (c)1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice. 6.6 SST 29LE010 3.0V-only 1 Megabit Page Mode EEPROM Table 2: Symbol A16-A7 A6-A0 DQ7-DQ0 Pin Description Pin Name Row Address Inputs Column Address Inputs Data Input/output CE# OE# WE# Vcc Vss NC Chip Enable Output Enable Write Enable Power Supply Ground No Connection Functions To provide memory addresses. Row addresses define a page for a write cycle. Column Addresses are toggled to load page data. To output data during read cycles and receive input data during write cycles. Data is internally latched during a write cycle. The outputs are in tri-state when OE# or CE# is high. To activate the device when CE# is low. To gate the data output buffers. To control the write operations To provide 3.3-volt supply ( 0.3V) Unconnected pins. Table 3: Mode Operation Modes Selection CE# OE# WE# VIL VIL VIH X X VIL VIL VIL VIL VIL VIL VIH X VIL X VIH VIL VIH VIH VIH VIH VIL X X VIH VIL VIH VIL VIL VIL DQ DOUT DIN High Z High Z/ DOUT High Z/ DOUT DIN Manufacturer Code (BF) Device Code (08) Address AIN AIN X X X AIN, See Table 4 A16 - A1 = VIL, A9 = VH, A0 = VIL A16 - A1 = VIL, A9 = VH, A0= VIH See Table 4 See Table 4 See Table 4 Read Page Write Standby Write Inhibit Write Inhibit Software Chip Erase Product Identification Hardware Mode Software Mode SDP Enable Mode SDP Disable Mode (c)1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice. 6.7 SST 29LE010 3.0V-only 1 Megabit Page Mode EEPROM Table 4: Command Sequence Software Command Codes 1st Bus 2nd Bus 3rd Bus 4th Bus 5th Bus 6th Bus Write Cycle Write Cycle Write Cycle Write Cycle Write Cycle Write Cycle Addr (1) Data Addr (1) Data Addr (1) Data Addr (1) Data Addr (1) Data Addr (1) Data 5555H AAH 2AAAH 55H 5555H A0H Addr(2) Data Software Data Protect Enable & Page Write Software Data Protect Disable Software Chip Erase Software ID Entry Software ID Exit 5555H 5555H 5555H 5555H AAH 2AAAH AAH 2AAAH AAH 2AAAH AAH 2AAAH 55H 55H 55H 55H 5555H 5555H 5555H 5555H 80H 80H 80H F0H 5555H 5555H 5555H AAH 2AAAH AAH 2AAAH AAH 2AAAH 55H 55H 55H 5555H 5555H 5555H 20H 10H 60H Notes: (1) (2) (3) Address format A14-A0 (Hex), Addresses A15 and A16 are a "Don't Care". Page Write consists of loading up to 128 bytes (A - A0). 6 The software chip erase function is not supported by the industrial temperature part. Please contact SST, if you require this function for an industrial temperature part. Notes for Software Product ID Command Code: 1. With A14 -A1 =0; SST Manufacturer Code = BFH, is read with A = 0, 0 29LE010 Device Code = 08H, is read with A = 1. 0 2. The device does not remain in Software P roduct ID Mode if powered down. (c)1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice. 6.8 SST 29LE010 3.0V-only 1 Megabit Page Mode EEPROM Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Max imum Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the perational sections o of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Temperature Under Bias ........................................................................ Storage Temperature ............................................................................. D. C. Voltage on Any Pin to Ground Potential ........................................ Transient Voltage (<20 ns) on Any Pin to Ground Potential ................... Voltage on A9 Pin to Ground Potential .................................................... Package Power Dissipation Capability (Ta = 25C) ................................. Through Hole Lead Soldering Temperature (10 Seconds) ...................... Surface Mount Lead Soldering Temperature (3 Seconds) ...................... (1) Output Short Circuit Current ................................................................. -55C to +125C -65C to +150C -0.5V to VCC+ 0.5V -1.0V to VCC+ 1.0V -0.5V to 14.0V 1.0W 300C 240C 100 mA Note: (1) Outputs shorted for no more than one second. No more than one output shorted at a time. Operating Range Range Commercial Industrial Ambient Temp 0 C to +70 C -40 C to +85 C VCC 3.0V to 3.6V 3.0V to 3.6V AC Conditions of Test Input Rise/Fall Time...............10 ns Output Load...........................1 TTL Gate and CL = 100 pF See Figures 12 and 13 Table 5: DC Operating Characteristics Min Limits Max 12 15 1 15 1 10 0.8 2.0 0.4 2.4 11.6 12.4 100 Units mA mA mA A A A V V V V V A Test Conditions CE#=OE#=VIL,WE#=VIH , all I/Os open, Address input = VIL/VIH, at f=1/TRC Min., VCC=VCC Max CE#=WE#=VIL, OE#=VIH, VCC =VCC Max. CE#=OE#=WE#=VIH, VCC =VCC Max. CE#=OE#=WE#=VCC -0.3V. VCC = VCC Max. VIN =GND to VCC, VCC = VCC Max. VOUT =GND to VCC, VCC = VCC Max. VCC = VCC Max. VCC = VCC Max. IOL = 100 A, VCC = VCC Min. IOH = -100 A, VCC = VCC Min. CE# = OE# =VIL, WE# = VIH CE# = OE# = VIL, WE# = VIH, A9 = VH Max. Symbol Parameter ICC Power Supply Current Read Write Standby VCC Current (TTL input) Standby VCC Current (CMOS input) Input Leakage Current Output Leakage Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage Supervoltage for A9 Supervoltage Current for A 9 ISB1 ISB2 ILI ILO VIL VIH VOL VOH VH IH (c)1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice. 6.9 SST 29LE010 3.0V-only 1 Megabit Page Mode EEPROM Table 6: Power-up Timings Symbol Parameter (1) TPU-READ Power-up to Read Oper ation TPU-WRITE (1) Power-up to Write Oper ation Maximum 100 5 Units s ms Table 7: Capacitance (Ta = 25 C, f=1 Mhz, other pins open) Parameter Description Test Condition (1) I/O Pin Capacitance VI/O = 0V CI/O CIN (1) Maximum 12 pF 6 pF Input Capacitance VIN = 0v Note: (1)This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Table 8: Symbol NEND TDR (1) Reliability Characteristics Parameter Minimum Specification Endurance Data Retention ESD Susceptibility Human Body Model ESD Susceptibility Machine Model Latch Up 1,000 & 10,000 100 1000 200 100 (2) Units Cycles Years Volts Volts mA Test Method MIL-STD-883, Method 1033 MIL-STD-883, Method 1008 JEDEC Standard A114 JEDEC Standard A115 JEDEC Standard 17 VZAP_HBM (1) VZAP_MM (1) ILTH(1) Note: (1)This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. (2) See Ordering Information for desired type. (c)1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice. 6.10 SST 29LE010 3.0V-only 1 Megabit Page Mode EEPROM AC Characteristics Table 9: Symbol TRC TCE TAA TOE TCLZ(1) TOLZ(1) TCHZ (1) TOHZ (1) TOH(1) Read Cycle Timing Parameters 29LE010-150 Parameter Min Max Read Cycle time 150 Chip Enable Access Time 150 Address Access Time 150 Output Enable Access Time 60 CE# Low to Active Output 0 OE# Low to Active Output 0 CE# High to High-Z Output 30 OE# High to High-Z Output 30 Output Hold from Address 0 Change 29LE010-200 Min Max 200 200 200 100 0 0 50 50 0 Units ns ns ns ns ns ns ns ns ns Table 10: Symbol TWC TAS TAH TCS TCH TOES TOEH TCP TWP TDS TDH TBLC (1) TBLCO (1) TIDA TSCE Note: (1) Page-Write Cycle Timing Parameters Parameter Min Write Cycle (erase and program) Address Setup Time 0 Address Hold Time 50 WE# and CE# Setup Time 0 WE# and CE# Hold Time 0 OE# High Setup Time 0 OE# High Hold Time 0 CE# Pulse Width 70 WE# Pulse Width 70 Data Setup Time 35 Data Hold Time 0 Byte Load Cycle Time 0.05 Byte Load Cycle Time 200 Software ID Access and Exit Time Software Chip Erase Max 10 100 10 20 Units ms ns ns ns ns ns ns ns ns ns ns s s s ms This parameter is measured only for initial qualification and after the design or process change that could affect this parameter. (c)1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice. 6.11 SST 29LE010 3.0V-only 1 Megabit Page Mode EEPROM Figure 3: Read Cycle Timing Diagram Figure 4: WE# Controlled Page Write Cycle Timi ng Diagram (c)1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice. 6.12 SST 29LE010 3.0V-only 1 Megabit Page Mode EEPROM Figure 5: CE# Controlled Page Write Cycle Timing Diagram Figure 6: Data# Polling Timing Diagram (c)1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice. 6.13 SST 29LE010 3.0V-only 1 Megabit Page Mode EEPROM Figure 7: Toggle Bit Timing Diagram Figure 8: Software Data Protect Disable Timing Diagram (c)1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice. 6.14 SST 29LE010 3.0V-only 1 Megabit Page Mode EEPROM Figure 9: Software Chip Erase Timing Diagram Figure 10: Software ID Entry and Read (c)1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice. 6.15 SST 29LE010 3.0V-only 1 Megabit Page Mode EEPROM Figure 11: Software ID Exit and Reset (c)1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice. 6.16 SST 29LE010 3.0V-only 1 Megabit Page Mode EEPROM 2.4 INPUT 2.0 REFERENCE POINTS 0.8 2.0 OUTPUT 0.8 0.4 AC test inputs are driven at V (2.4 VTTL ) for a logic "1" and VOL (0.4 VTTL ) for a logic "0". OH Measurement reference points for inputs or outputs are V (2.0 VTTL ) and VIL (0.8 VTTL ). Inputs rise IH and fall times (10% 90%) are <10 ns. Figure 12: AC Input/Output Reference Waveforms TEST LOAD EXAMPLE VCC TO TESTER RL HIGH TO DUT CL RL LOW Figure 13: Test Load Example (c)1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice. 6.17 SST 29LE010 3.0V-only 1 Megabit Page Mode EEPROM Start See Figure 16 S o ffttw a rr eDD aa a So wa e at t P r t t c t rite P r ooe etc WW rite Co man C o m m a n dd Set Page Address Set Byte Address = 0 Load Byte D a ta Increm e n t Byte Address By 1 No Byte Address = 128 ? Yes W ait T B C O W a i t T B LLC O W a ii t f o rr e n ddoo f W a t fo en f W r Werite W CW C , a t a i t ( T (T , D # T oo lg il n g ib io ro r Pgl e b t t D a t T o gP o l l i n g b i t a # g le bit o o p e r a ttiio nn ) ra o ) W rite C o m p leted Figure 14: Write Algorithm (c)1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice. 6.18 SST 29LE010 3.0V-only 1 Megabit Page Mode EEPROM Data# Polling Internal Timer Toggle Bit Page Write Initiated Page Write Initiated Page Write Initiated Wait TWC Read a byte from page Read DQ7 (Data for last byte loaded) Write Completed Read same byte No Is DQ7 = true data? Yes No Does DQ6 match? Yes Write Completed Write Completed Figure 15: Wait Options (c)1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice. 6.19 SST 29LE010 3.0V-only 1 Megabit Page Mode EEPROM Software Data Protect Enable Command Sequence Software Data Protect Disable Command Sequence Write data: AA Address: 5555 Write data: AA Address: 5555 Write data: 55 Address: 2AAA Write data: 55 Address: 2AAA Write data: A0 Address: 5555 Write data: 80 Address: 5555 Load 0 to 128 Bytes of page data Optional Page Load Operation Write data: AA Address: 5555 Write data: 55 Address: 2AAA Wait TBLCO Write data: 20 Address: 5555 Wait TWC Wait TBLCO SDP Enabled Wait TWC SDP Disabled Figure 16: Software Data Protection Flowcharts (c)1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice. 6.20 SST 29LE010 3.0V-only 1 Megabit Page Mode EEPROM Software Product ID Entry Command Sequence Software Product ID Exit & Reset Command Sequence Write data: AA Address: 5555 Write data: AA Address: 5555 Write data: 55 Address: 2AAA Write data: 55 Address: 2AAA Write data: 80 Address: 5555 Write data: F0 Address: 5555 Write data: AA Address: 5555 Pause 10 us Write data: 55 Address: 2AAA Return to normal operation Write data: 60 Address: 5555 Pause 10 us Read Software ID Figure 17: Software Product Command Flowcharts (c)1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice. 6.21 SST 29LE010 3.0V-only 1 Megabit Page Mode EEPROM Software Chip-Erase Command Sequnce Write data: AA Address: 5555 Write data: 55 Address: 2AAA Write data: 80 Address: 5555 Write data: AA Address: 5555 Write data: 55 Address: 2AAA Write data: 10 Address: 5555 Wait TSCE Chip Erase to FFH Figure 18: Software Chip Erase Command Codes (c)1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice. 6.22 SST 29LE010 3.0V-only 1 Megabit Page Mode EEPROM Product Ordering Information Device SST29LE010 - Speed XXX - Suffix1 XX - Suffix2 XX Package Modifier H = 32 leads Numeric = Die modifier Package Type P = PDIP N = PLCC E = TSOP (die up) U = Unencapsulated die Operating Temperature C = Commercial = 0 to 70C I = Industrial = -40 to 85C Minimum Endurance 3 = 1000 cycles 4 = 10,000 cycles Read Access Speed 150 = 150 ns 200 = 200 ns (c)1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice. 6.23 SST 29LE010 3.0V-only 1 Megabit Page Mode EEPROM Valid combinations SST29LE010-150-4C- EH SST29LE010-200-4C- EH SST29LE010-150-3C- EH SST29LE010-200-3C- EH SST29LE010-150-4I-EH SST29LE010-200-4I-EH SST29LE010-200-3C-U1 SST29LE010-200-4C-U1 Example: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. Note: The software chip erase function is not supported by the industrial temperature part. Please contact SST, if you require this function for an industrial temperature part. SST29LE010-150-4C- NH SST29LE010-200-4C- NH SST29LE010-150-3C- NH SST29LE010-200-3C- NH SST29LE010-150-4I-NH SST29LE010-200-4I-NH SST29LE010-150-4C- PH SST29LE010-200-4C- PH SST29LE010-150-3C- PH SST29LE010-200-3C- PH (c)1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice. 6.24 |
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