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| NTHC5513 Power MOSFET 20 V, +3.9 A / -3.0 A, Complementary ChipFETt Features * * * * * * * * * * * Complementary N-Channel and P-Channel MOSFET Small Size, 40% Smaller than TSOP-6 Package Leadless SMD Package Featuring Complementary Pair ChipFET Package Provides Great Thermal Characteristics Similar to Larger Packages Low RDS(on) in a ChipFET Package for High Efficiency Performance Low Profile (< 1.10 mm) Allows Placement in Extremely Thin Environments Such as Portable Electronics Pb-Free Package is Available Load Switch Applications Requiring Level Shift DC-DC Conversion Circuits Drive Small Brushless DC Motors Designed for Power Management Applications in Portable, Battery Powered Products http://onsemi.com V(BR)DSS N-Channel 20 V P-Channel -20 V RDS(on) TYP 60 mW @ 4.5 V 80 mW @ 2.5 V 130 mW @ -4.5 V 200 mW @ -2.5 V S2 ID MAX 3.9 A -3.0 A Applications D1 G1 G2 S1 N-Channel MOSFET D2 P-Channel MOSFET MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) N-Ch Steady State tv5 P-Ch Steady State tv5 Pulsed Drain Current (Note 1) Power Dissipation (Note 1) N-Ch P-Ch Steady State tv5 Operating Junction and Storage Temperature Lead Temperature for Soldering Purposes (1/8" from case for 10 seconds) TA = 25C TA = 85C TA = 25C TA = 25C TA = 85C TA = 25C t = 10 ms t = 10 ms TA = 25C TA = 25C TJ, TSTG TL PD IDM ID Symbol VDSS VGS ID Value 20 12 2.9 2.1 3.9 -2.2 -1.6 -3.0 12 -9.0 1.1 2.1 -55 to 150 260 C W A A Unit V V A ChipFET CASE 1206A STYLE 2 PIN CONNECTIONS D1 D1 D2 D2 8 7 6 5 1 2 3 4 MARKING DIAGRAM 1 2 3 4 C1 M 8 7 6 5 S1 G1 S2 G2 C1 = Specific Device Code M = Month Code ORDERING INFORMATION C Device NTHC5513T1 NTHC5513T1G Package ChipFET ChipFET (Pb-Free) Shipping 3000/Tape & Reel 3000/Tape & Reel Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTHC5513/D (c) Semiconductor Components Industries, LLC, 2004 1 October, 2004 - Rev. 4 NTHC5513 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (Note 1) Steady State tv5 TA = 25C Symbol RqJA Max 110 60 Unit C/W 2. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter OFF CHARACTERISTICS (Note 3) Drain-to-Source Breakdown Voltage V(BR)DSS () N P Zero Gate Voltage Drain Current IDSS N P N P Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(TH) () N P Drain-to-Source On Resistance RDS(on) N P N P Forward Transconductance gFS N P CHARGES AND CAPACITANCES Input Capacitance CISS N P Output Capacitance COSS N P Reverse Transfer Capacitance CRSS N P Total Gate Charge QG(TOT) ( ) N P Gate-to-Source Gate Charge QGS N P Gate-to-Drain "Miller" Charge QGD N P 3. Pulse Test: Pulse Width v 250 ms, Duty Cycle v 2%. f = 1 MHz VGS = 0 V MHz, VDS = 10 V VDS = -10 V VDS = 10 V VDS = -10 V VDS = 10 V VDS = -10 V VGS = 4.5 V, VDS = 10 V, ID = 2.9 A VGS = -4.5 V, VDS = -10 V, ID = -2.2 A VGS = 4.5 V, VDS = 10 V, ID = 2.9 A VGS = -4.5 V, VDS = -10 V, ID = -2.2 A VGS = 4.5 V, VDS = 10 V, ID = 2.9 A VGS = -4.5 V, VDS = -10 V, ID = -2.2 A 180 185 80 95 25 30 2.6 3.0 0.6 0.5 0.7 0.9 4.0 6.0 nC pF VGS = VDS ID = 250 mA ID = -250 mA 0.6 -0.6 0.058 0.130 0.077 0.200 6.0 6.0 1.2 -1.2 0.080 0.155 0.115 0.240 S W V IGSS VGS = 0 V ID = 250 mA ID = -250 mA 20 -20 1.0 -1.0 5 -5 100 nA mA V Symbol N/P Test Conditions Min Typ Max Unit VGS = 0 V, VDS = 16 V VGS = 0 V, VDS = -16 V VGS = 0 V, VDS = 16 V, TJ = 85 C VGS = 0 V, VDS = -16 V, TJ = 85 C VDS = 0 V, VGS = 12 V VGS = 4.5 V , ID = 2.9 A VGS = -4.5 V , ID = -2.2 A VGS = 2.5 V , ID = 2.3 A VGS = -2.5 V, ID = -1.7 A VDS = 10 V, ID = 2.9A VDS = -10 V , ID = -2.2 A http://onsemi.com 2 NTHC5513 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage (Note 5) VSD N P Reverse Recovery Time (Note 4) tRR N P Charge Time ta N P Discharge Time tb N P Reverse Recovery Charge QRR N P 4. Switching characteristics are independent of operating junction temperatures. 5. Pulse Test: Pulse Width v 250 ms, Duty Cycle v 2%. VGS = 0 V, dIS / dt = 100 A/ms VGS = 0 V IS = 2.6 A IS = -2.1 A IS = 1.5 A IS = -1.5 A IS = 1.5 A IS = -1.5 A IS = 1.5 A IS = -1.5 A IS = 1.5 A IS = -1.5 A 0.8 -0.8 12.5 32 9.0 10 3.5 22 6.0 15 nC 1.15 -1.15 ns V td(ON) tr td(OFF) tf td(ON) tr td(OFF) tf P VDD = -16 V, VGS = -4.5 V, ID = -2.2 A, RG = 2.5 W N VDD = 16 V, VGS = 4.5 V, ID = 2.9 A, RG = 2.5 W 5.0 9.0 10 3.0 7.0 13 33 27 10 18 20 6.0 12 25 50 40 ns Symbol N/P Test Conditions Min Typ Max Unit http://onsemi.com 3 NTHC5513 TYPICAL N-CHANNEL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 8 ID, DRAIN CURRENT (AMPS) 8 TJ = 25C 2V ID, DRAIN CURRENT (AMPS) 6 VGS = 5 V to 3 V VGS = 2.4 V 2.2 V VDS 10 V 6 4 1.8 V 4 2 1.6 V 1.4 V 2 TC = -55C 25C 100C 3 0 0 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0 0 0.5 1 1.5 2 2.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.15 ID = 2.7 A TJ = 25C 0.1 0.1 Figure 2. Transfer Characteristics TJ = 25C VGS = 2.5 V 0.07 VGS = 4.5 V 0.05 0 0 2 4 1 3 5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 6 0.04 1 3 5 7 ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Gate-to-Source Voltage 1.7 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = 2.7 A VGS = 4.5 V 1.5 IDSS, LEAKAGE (nA) 100 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V 1.3 TJ = 100C 10 1.1 0.9 0.7 -50 1 -25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 4 NTHC5513 TYPICAL N-CHANNEL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5 20 400 CISS C, CAPACITANCE (pF) 300 CRSS 200 VDS = 0 V VGS = 0 V TJ = 25C 4.5 4 QG 16 3.5 3 12 2.5 2 QGS QGD 8 1.5 1 ID = 2.7 A TJ = 25C 0 0.5 1 1.5 2 2.5 4 100 COSS 0.5 0 QG, TOTAL GATE CHARGE (nC) 0 10 5 VGS 0 VDS 5 10 15 20 0 3 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 100 IS, SOURCE CURRENT (AMPS) VDD = 16 V ID = 2.7 A VGS = 4.5 V t, TIME (ns) 7 6 5 4 3 2 1 Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge VGS = 0 V TJ = 25C 10 tr td(OFF ) td(ON) tf 1 1 10 RG, GATE RESISTANCE (OHMS) 100 0 0.3 0.45 0.6 0.75 0.9 1.05 1.2 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 5 NTHC5513 TYPICAL P-CHANNEL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 4 -ID, DRAIN CURRENT (AMPS) TJ = 25C -ID, DRAIN CURRENT (AMPS) 4 VDS -10 V 3 VGS = -6 V to -3 V VGS = -2.4 V -2.2 V -2 V 3 -1.8 V 2 -1.6 V 1 -1.4 V -1.2 V 0 0 1 2 3 4 5 6 7 8 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2 1 TC = -55C 25C 100C 3 0 0.5 1 1.5 2 2.5 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 11. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.5 ID = -2.1 A TJ = 25C 0.25 Figure 12. Transfer Characteristics TJ = 25C 0.225 VGS = -2.5 V 0.2 0.175 0.15 VGS = -4.5 V 0.125 0.1 0.5 0.4 0.3 0.2 0.1 0 1 2 4 3 5 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 6 1.5 2.5 3.5 -ID, DRAIN CURRENT (AMPS) Figure 13. On-Resistance vs. Gate-to-Source Voltage 1.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = -2.1 A VGS = -4.5 V -IDSS, LEAKAGE (A) 1.4 1000 10000 Figure 14. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150C 1.2 1 100 TJ = 100C 0.8 0.6 -50 10 -25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20 -TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 15. On-Resistance Variation with Temperature Figure 16. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 6 NTHC5513 TYPICAL P-CHANNEL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) VDS = 0 V 500 C, CAPACITANCE (pF) 400 300 200 100 0 10 5 -VGS 0 -VDS 5 10 15 20 COSS CRSS CISS VGS = 0 V TJ = 25C -VGS, GATE-TO-SOURCE VOLTAGE (V) 600 QT 4 -VDS -VGS 12 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) 600 5 15 3 QGS 2 QGD 9 6 1 ID = -2.1 A TJ = 25C 3 0 0 1 2 3 4 QG, TOTAL GATE CHARGE (nC) 0 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 17. Capacitance Variation 1000 -IS, SOURCE CURRENT (AMPS) 2.5 Figure 18. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge VGS = 0 V TJ = 25C 2 100 t, TIME (ns) td(OFF) tf 10 tr td(ON) VDD = -16 V ID = -2.1 A VGS = -4.5 V 10 RG, GATE RESISTANCE (OHMS) 100 1.5 1 0.5 0 0.3 1 1 0.5 0.7 0.9 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 19. Resistive Switching Time Variation vs. Gate Resistance Figure 20. Diode Forward Voltage vs. Current TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 Notes: 0.2 0.1 0.1 0.05 0.02 Single Pulse 10-3 10-2 10 -1 1 Square Wave Pulse Duration (sec) PDM t1 t2 t1 1. Duty Cycle, D = t 2 2. Per Unit Base = RthJA = 90C/W 3. TJM - TA = PDMZqJA(t) 4. Surface Mounted 10 100 0.01 10-4 Figure 21. Thermal Response http://onsemi.com 7 NTHC5513 SOLDERING FOOTPRINT* 2.032 0.08 0.457 0.018 0.635 0.025 0.635 0.025 2.032 0.08 1.092 0.043 0.178 0.007 0.457 0.018 0.711 0.028 0.66 0.026 0.66 0.026 0.254 0.010 Figure 22. Basic Figure 23. Style 2 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. BASIC PAD PATTERNS The basic pad layout with dimensions is shown in Figure 22. This is sufficient for low power dissipation MOSFET applications, but power semiconductor performance requires a greater copper pad area, particularly for the drain leads. The minimum recommended pad pattern shown in Figure 23 improves the thermal area of the drain connections (pins 5, 6, 7, 8) while remaining within the confines of the basic footprint. The drain copper area is 0.0019 sq. in. (or 1.22 sq. mm). This will assist the power dissipation path away from the device (through the copper lead-frame) and into the board and exterior chassis (if applicable) for the single device. The addition of a further copper area and/or the addition of vias to other board layers will enhance the performance still further. http://onsemi.com 8 NTHC5513 PACKAGE DIMENSIONS ChipFET CASE 1206A-03 ISSUE E A 8 7 6 5 M K 5 6 3 7 2 8 1 S 1 2 3 4 B 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE. 4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL AND VERTICAL SHALL NOT EXCEED 0.08 MM. 5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS. 6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD SURFACE. 7. 1206A-01 AND 1206A-02 OBSOLETE. NEW STANDARD IS 1206A-03. DIM A B C D G J K L M S MILLIMETERS MIN MAX 2.95 3.10 1.55 1.70 1.00 1.10 0.25 0.35 0.65 BSC 0.10 0.20 0.28 0.42 0.55 BSC 5 NOM 1.80 2.00 INCHES MIN MAX 0.116 0.122 0.061 0.067 0.039 0.043 0.010 0.014 0.025 BSC 0.004 0.008 0.011 0.017 0.022 BSC 5 NOM 0.072 0.080 L G D J C 0.05 (0.002) STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. SOURCE 1 GATE 1 SOURCE 2 GATE 2 DRAIN 2 DRAIN 2 DRAIN 1 DRAIN 1 http://onsemi.com 9 NTHC5513 ChipFET is a trademark of Vishay Siliconix. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 10 NTHC5513/D |
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