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| E2Q0012-38-71 electronic components This version: Jul. 1998 Previous version: Jan. 1998 KGF1155B/1155 electronic components KGF1155B/1155 Small-Signal Amplifier GENERAL DESCRIPTION The KGF1155B is a small-signal UHF-band amplifier that features low noise and low current operation. The KGF1155B specifications are guaranteed to a fixed matching circuit of 5 V and 850 MHz; external impedance-matching circuits are also required. Because of the dual gate configuration, low noise, and low operating current, the KGF1155B is ideal as a receiver mixer for personal handy phones. The KGF1155 is an amplifier similar to the KGF1155B in specifications and typical properties. Although having S Parameters slightly different from those of the KGF1155B, the KGF1155 meets the specifications for the KGF1155B, even with the same matching circuits as those of the KGF1155B. FEATURES * Low current operation: 2.5 mA (max.) * High output power: 3 dBm (min.) * Low noise: 3 dB (max.) * Self-bias circuit configuration with built-in source capacitor * Package: 4PSOP PACKAGE DIMENSIONS 1.80.1 0.850.05 0.6 +0.1 -0.05 0.4 +0.1 -0.05 1.10.15 0.36 0.74 3.00.2 1.50.15 0.3 MIN 0 to 0.15 Package material 1.90.1 2.80.15 Lead frame material 0.125 +0.03 -0 Epoxy resin 42 alloy Solder plating 5 mm or more Pin treatment Solder plate thickness (Unit: mm) Note: Ask our sales department for detailed requirements of the KGF1155. 1/8 electronic components KGF1155B/1155 MARKING (4) (3) MXX (1) (2) NUMERICAL NUMERICAL PRODUCT TYPE LOT NUMBER (1) Gate1 (2) Gate2 (3) Drain (4) GND CIRCUIT G(2) G(1) D(3) GND(4) 2/8 electronic components KGF1155B/1155 ABSOLUTE MAXIMUM RATINGS Item Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Storage temperature Symbol VDS VGS IDS Ptot Tch Tstg Condition Ta = 25C Ta = 25C Ta = 25C Ta = 25C -- -- Unit V V mA mW C C Min. -- -3.0 -- -- -- -45 Max. 7.0 0.4 60 200 150 125 ELECTRICAL CHARACTERISTICS (Ta = 25C) Item Gate-source leakage current Gate-drain leakage current Drain-source leakage current Operating current Gate-source cut-off voltage Noise figure Linear gain Output power Third-order intercept point Symbol IGSS IGDO IDS(off) ID VGS(off) F GLIN PO IP3 Condition VGS(1,2) = -3 V VGD(1,2) = -8 V VDS = 3 V, VGS(1,2) = -2.5 V (*1), PIN = -20 dBm VDS = 3 V, IDS = 120 mA (*1) (*1), PIN = -20 dBm (*2), PIN = -3 dBm (*1), f2 = 851 MHz Unit mA mA mA mA V dB dB dBm dBm Min. -- -- -- -- -2.0 -- 12.0 3.0 -- Typ. -- -- -- -- -- -- -- -- 11 Max. 12 60 120 2.5 -1.0 3.0 -- -- -- *1 Self-bias condition: VDD = 5.0 V0.25 V, VG1 = 0 V, VG2 = 1.0 V, f = 850 MHz *2 Self-bias condition: VDD = 5.0 V0.25 V, VG1 = 0 V, VG2 = 1.5 V, f = 850 MHz 3/8 electronic components KGF1155B/1155 RF CHARACTERISTICS 4/8 electronic components KGF1155B/1155 5/8 electronic components Typical S Parameters of KGF1155B KGF1155B/1155 VDD = 5 V, VG1 = 0 V, VG2 = 1 V, ID = 1.47 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 600.0 700.0 800.0 900.0 1000.0 1100.0 1200.0 1300.0 1400.0 1500.0 1600.0 1700.0 1800.0 1900.0 2000.0 2100.0 2200.0 2300.0 2400.0 2500.0 2600.0 2700.0 2800.0 2900.0 3000.0 1.003 0.998 0.998 0.995 0.990 0.987 0.983 0.977 0.973 0.964 0.960 0.953 0.946 0.935 0.927 0.916 0.907 0.900 0.888 0.874 0.863 0.848 0.834 0.817 0.806 0.789 -11.21 -13.33 -15.65 -17.93 -20.15 -22.38 -24.65 -26.97 -29.11 -31.48 -33.68 -35.98 -38.10 -40.43 -42.85 -45.08 -47.36 -49.85 -52.09 -54.44 -56.69 -58.95 -61.27 -63.61 -65.83 -68.06 1.039 1.043 1.046 1.052 1.047 1.055 1.052 1.060 1.057 1.062 1.076 1.081 1.077 1.094 1.100 1.115 1.133 1.124 1.133 1.146 1.149 1.139 1.166 1.170 1.187 1.192 167.37 162.83 158.63 154.37 150.90 146.74 142.66 139.29 136.12 132.38 128.66 125.38 122.17 117.61 114.04 110.63 107.37 102.45 98.73 95.35 91.22 86.95 82.74 79.25 74.61 70.19 0.004 0.005 0.006 0.007 0.007 0.007 0.008 0.008 0.009 0.009 0.008 0.009 0.008 0.009 0.009 0.008 0.009 0.008 0.007 0.008 0.007 0.009 0.008 0.011 0.012 0.016 81.47 80.47 72.42 79.91 76.16 73.24 72.66 78.86 75.51 69.60 73.17 73.89 74.65 72.94 76.94 85.29 85.24 91.55 99.54 109.36 119.89 134.23 141.12 154.76 159.19 165.49 0.974 0.974 0.973 0.975 0.973 0.977 0.976 0.977 0.975 0.975 0.980 0.979 0.983 0.983 0.988 0.986 0.991 0.992 0.996 1.002 1.003 1.012 1.011 1.022 1.027 1.028 -6.35 -7.50 -8.76 -10.01 -11.43 -12.49 -13.68 -14.91 -16.25 -17.35 -18.54 -19.75 -20.71 -22.43 -23.53 -24.53 -26.07 -26.86 -28.35 -29.36 -30.84 -32.10 -33.39 -35.07 -36.13 -37.60 6/8 electronic components Typical S Parameters of KGF1155B KGF1155B/1155 VDD = 5 V, VG1 = 0 V, VG2 = 1 V, ID = 1.47 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W 7/8 electronic components Test Circuit and Bias Configuration for KGF1155B at 850 MHz RG2 VG2 (2) CC IN T3 RG1 C1 CB T1 T2 (1) KGF 1155B KGF1155B/1155 (3) (4) T7 T4 T5 T6 C2 CC OUT RFC VDD CB CF T1: Z0 = 110 W, E = 25 deg T4: Z0 = 110 W, E = 7 deg T2: Z0 = 110 W, E = 27 deg T5: Z0 = 110 W, E = 35 deg T3 : Z0 = 65 W, E = 16 deg T6: Z0 = 65 W, E = 16 deg T7 : Z0 = 110 W, E = 6 deg C1 = 0.10 pF, C2 = 1.05 pF CC(DC Block) = 1000 pF, CB(By-pass) = 1000 pF, CF(Feed through) = 1000 pF RFC = 200 nH, RG1 = 1000 W, RG2 = 750 W 8/8 |
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