View IRFI9520N_288195.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 9.1527
PRELIMINARY Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description
l l
IRFI9520N
HEXFET(R) Power MOSFET
D
VDSS = -100V RDS(on) = 0.48
G S
ID = -5.5A
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
Max.
-5.5 -3.9 -27 30 0.2 20 140 -4.0 3.0 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient
Typ.
--- ---
Max.
5.0 65
Units
C/W
3/16/98
IRFI9520N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss C Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance Min. -100 --- --- -2.0 1.4 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.10 --- --- --- --- --- --- --- --- --- --- 14 47 28 31 4.5 7.5 350 110 70 12 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 0.48 VGS = -10V, ID = -4.0A -4.0 V VDS = VGS, ID = -250A --- S VDS = -50V, ID = -4.0A -25 VDS = -100V, VGS = 0V A -250 VDS = -80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 27 ID = -4.0A 5.0 nC VDS = -80V 15 VGS = -10V, See Fig. 6 and 13 --- VDD = -50V --- ID = -4.0A ns --- RG = 22 --- RD = 12, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- VDS = -25V pF --- = 1.0MHz, See Fig. 5 --- = 1.0MHz
D
S
Source-Drain Ratings and Characteristics
IS
ISM
V SD t rr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- -5.5 showing the A G integral reverse --- --- -27 p-n junction diode. S --- --- -1.6 V TJ = 25C, IS = -3.1A, VGS = 0V --- 100 150 ns TJ = 25C, IF = -4.0A --- 420 630 C di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%. t=60s, =60Hz
Uses IRF9520N data and test conditions
Starting TJ = 25C, L = 18mH
RG = 25, IAS = -4.0A. (See Figure 12)
ISD -4.0A, di/dt -300A/s, VDD V(BR)DSS,
TJ 175C
IRFI9520N
100
VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP
100
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP
10
10
1
1
-4.5V
20s PULSE WIDTH TJ = 175 C
1 10 100
-4.5V
0.1 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
0.1 0.1
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics,
Fig 2. Typical Output Characteristics,
100
2.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = -5.2A
-I D , Drain-to-Source Current (A)
TJ = 175 C
10
2.0
TJ = 25 C
1.5
1.0
1
0.5
0.1 4 5 6 7
V DS = 10V 20s PULSE WIDTH 8 9 10
0.0 -60 -40 -20
VGS = -10V
0 20 40 60 80 100 120 140 160 180
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRFI9520N
800
-VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = -4.0 A
16
VDS =-80V VDS =-50V VDS =-20V
C, Capacitance (pF)
600
Ciss
12
400
Coss Crss
8
200
4
0 1 10 100
0 0 5 10
FOR TEST CIRCUIT SEE FIGURE 13
15 20 25
-VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED BY RDS(on)
-ISD , Reverse Drain Current (A)
10us
-ID , Drain Current (A) I
TJ = 175 C
10
10
100us
TJ = 25 C
1ms 1
1
10ms
0.1 0.2
V GS = 0 V
0.8 1.4 2.0 2.6
0.1 1
TC = 25 C TJ = 175 C Single Pulse
10 100 1000
-VSD ,Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRFI9520N
6.0
VDS VGS
RD
D.U.T.
+
-ID , Drain Current (A)
4.0
-10V
Pulse Width 1 s Duty Factor 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
td(on) tr t d(off) tf
VGS
0.0 25 50 75 100 125 150 175
10%
TC , Case Temperature ( C)
90%
Fig 9. Maximum Drain Current Vs. Case Temperature
VDS
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
1
SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
-
RG
VDD
IRFI9520N
EAS , Single Pulse Avalanche Energy (mJ)
VDS
L
400
RG
D .U .T
IA S
VD D A D R IV E R
ID -1.7A -2.8A BOTTOM -4.0A TOP
300
-20V
tp
0.01
200
15V
100
Fig 12a. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150 175
IAS
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
VG
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
+
QGS
QGD
D.U.T.
-
-10V
VDS
IRFI9520N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
+
-
+
RG VGS * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test
+ VDD
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive P.W. Period D=
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS
IRFI9520N
Package Outline
TO-220 Fullpak Outline Dimensions are shown in millimeters (inches)
10.60 (.417) 10.40 (.409) o 3.40 (.133) 3.10 (.123) -A3.70 (.145) 3.20 (.126) 4.80 (.189) 4.60 (.181) 2.80 (.110) 2.60 (.102) LE A D A S S IG N ME N TS 1 - G A TE 2 - D R A IN 3 - SOURCE
7.10 (.280) 6.70 (.263)
16.00 (.630) 15.80 (.622)
1.15 (.045) M IN . 1 2 3
NOTES: 1 D IME N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982 2 C O N TR O LLIN G D IM E N S IO N : IN C H .
3.30 (.130) 3.10 (.122) -B13.70 (.540) 13.50 (.530) C D
A 1.40 (.055) 3X 1.05 (.042) 2.54 (.100) 2X 0.90 (.035) 3X 0.70 (.028) 0.25 (.010) M AM B 3X 0.48 (.019) 0.44 (.017)
B
2.85 (.112) 2.65 (.104)
M IN IM U M C R E E P A G E D IS TA N C E B E TW E E N A -B -C -D = 4.80 (.189)
Part Marking Information
TO-220 Fullpak
E X AE X A M P: L E : IS HIS A N AIR F IR0F I8 4 0 G MPLE TH T IS IS N 1 1 0 W ITH ITH S E M B L Y L Y W AS ASSEMB L O TL O T D E D E 1E 4 0 1 CO CO 9B M
A
IN TE R N A T IO N A L IN T E R N A T IO N A L R E C TIF IE R IR FF I81 0 G R E C T IF IE R IR 1 0 4 0 LOGO 9246 LOGO 9 B 40 1 1 M E 92 45 A S S E MML Y Y ASSE B BL L OT T COO DE LO CDE
P A R T N U M B E RA PART NUMBER
D A TE C O D E (Y Y W E ) O D E DAT W C Y(Y Y=W Y E)A R Y W YY = W AR W W = YE E E K W W = W EEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 3/98

▲Up To Search▲

Price & Availability of IRFI9520N

	To Download IRFI9520N Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .