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| MSC1004M NPN SILICON RF MICROWAVE TRANSISTOR DESCRIPTION: The ASI MSC1004M is low level Class-C, Common Base Device Designed for IFF, DME driver Applications. PACKAGE STYLE .250 SQ 2L FL 2 3 1 FEATURES INCLUDE: * Gold Metalization * Input Matching * Emitter Ballasting MAXIMUM RATINGS IC VCC PDISS TJ TSTG JC O O 650 mA 32 V 18 W @ TC 100 C O O O -65 C to +200 C -65 C to +150 C 5.0 C/W 1 = COLLECTOR 2 = EMITTER 3 = BASE O CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE PG POUT TC = 25 C O TEST CONDITIONS IC = 1.0 mA IC = 25 mA IE = 1.0 mA VCE = 28 V VCE = 5.0 V VCE = 28 V IC = 200 mA f = 1025 to 1150 MHz DUTY CYCLE = 1.0% RBE = 10 MINIMUM TYPICAL MAXIMUM 45 45 3.5 1.0 30 9.0 4.0 35 300 UNITS V V mA PIN = 500 mW PULSE WIDTH = 10 S dB W % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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