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| MITSUBISHI SEMICONDUCTOR M54580P/FP 7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54580P and M54580FP are seven-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply. PIN CONFIGURATION INPUT IN1 1 IN2 2 IN3 3 IN4 4 IN5 5 IN6 6 IN7 7 GND 8 16 O1 15 O2 14 O3 13 O4 OUTPUT 12 O5 11 O6 10 O7 9 VS FEATURES High breakdown voltage (BVCEO 50V) High-current driving (Io(max) = -150mA) Active L-level input With input diodes Wide operating temperature range (Ta = -20 to +75C) 16P4(P) Package type 16P2N-A(FP) CIRCUIT DIAGRAM APPLICATION Drives of relays, printers and indication elements such as LEDs, fluorescent display tubes and lamps, and interfaces between MOS-bipolar logic systems and relays, solenoids, or small motors VS 30K 7K INPUT 7K OUTPUT 50K FUNCTION The M54580P and M54580FP each have seven circuits, which are made of output current-sourcing Darlington transistors consisting of PNP and NPN transistors. Each PNP transistor has a diode and resistance of 7k between the base and input pin. Its emitter and NPN transistor collectors are connected to the VS pin (pin 9). Resistance of 50k is connected between each output pin and GND pin (pin 8). Output current is 150mA maximum. Supply voltage VS is 50V maximum. The M54580FP is enclosed in a molded small flat package, enabling space-saving design. GND The seven circuits share the VS and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : ABSOLUTE MAXIMUM RATINGS Symbol VCEO VS VI IO Pd Topr Tstg Parameter Collector-emitter voltage Supply voltage Input voltage Output current Power dissipation Operating temperature Storage temperature (Unless otherwise noted, Ta = -20 ~ +75C) Conditions Output, L Ratings -0.5 ~ +50 50 -0.5 ~ VS Unit V V V mA W C C Aug. 1999 Current per circuit output, H Ta = 25C, when mounted on board -150 1.47(P)/1.00(FP) -20 ~ +75 -55 ~ +125 MITSUBISHI SEMICONDUCTOR M54580P/FP 7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY RECOMMENDED OPERATING CONDITIONS Symbol VS Supply voltage Output current (Current per 1 circuit when 7 circuits are coming on simultaneously) "H" input voltage "L" input voltage Duty Cycle P : no more than 85% FP : no more than 50% Duty Cycle P : no more than 100% FP : no more than 100% Parameter (Unless otherwise noted, Ta = -20 ~ +75C) min 4 0 0 VS-0.4 0 Limits typ -- -- -- -- -- max 50 -100 Unit V IO mA -50 VS VS-3.2 V V VIH VIL ELECTRICAL CHARACTERISTICS Symbol V (BR) CEO VCE (sat) II IR hFE Parameter (Unless otherwise noted, Ta = -20 ~ +75C) Test conditions ICEO = 100A Limits min 50 -- -- -- -- -- 800 typ+ -- 0.9 0.8 -0.3 -0.65 -- 3000 max -- 1.5 1.2 -0.6 -0.95 100 -- Unit V V mA A -- Collector-emitter breakdown voltage VI = VS-3.2V, IO = -100mA Collector-emitter saturation voltage VI = VS-3.2V, IO = -50mA Input current Clamping diode reverse current DC amplification factor VI = VS-3.5V VI = VS-6V VI = 40V VCE = 4V, VS = 10V, IC = -100mA, Ta = 25C + : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions Limits min -- -- typ 200 7500 max -- -- Unit ns ns NOTE 1 TEST CIRCUIT INPUT VS TIMING DIAGRAM INPUT Measured device 50% 50% PG 50 RL CL OUTPUT 50% OUTPUT ton toff 50% (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, ZO = 50 VI = 0.8 to 4V (2) Input-output conditions : RL = 40, , VS = 4V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Aug. 1999 MITSUBISHI SEMICONDUCTOR M54580P/FP 7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY TYPICAL CHARACTERISTICS Output Saturation Voltage Output Current Characteristics -200 VS = 10V VI = 6.8V Thermal Derating Factor Characteristics 2.0 Power dissipation Pd (W) Output current IO (mA) 1.5 M54580P -150 1.0 M54580FP -100 Ta = 75C Ta = 25C 0.5 -50 Ta = -20C 0 0 25 50 75 100 0 0 0.5 1.0 1.5 2.0 Ambient temperature Ta (C) Duty-Cycle-Output Current Characteristics (M54580P) -200 Output saturation voltage VCE (sat) (V) Duty-Cycle-Output Current Characteristics (M54580P) -200 Output current IO (mA) -120 to Output current IO (mA) -160 -160 to *The output current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 75C -120 -80 *The output current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C -80 -40 -40 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty-Cycle-Output Current Characteristics (M54580FP) -200 Duty cycle (%) Duty-Cycle-Output Current Characteristics (M54580FP) -200 Output current IO (mA) -120 to Output current IO (mA) -160 -160 to -120 -80 *The output current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C -80 *The output current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 75C -40 -40 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty cycle (%) Aug. 1999 MITSUBISHI SEMICONDUCTOR M54580P/FP 7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY Grounded Emitter Transfer Characteristics -200 104 VS = 10V VCE = 4V 7 DC Amplification Factor Output Current Characteristics VS = 10V VCE = 4V Ta = 75C -150 DC amplification factor hFE 5 3 2 Ta = 25C Output current IO (mA) Ta = -20C -100 Ta = 75C Ta = 25C Ta = -20C 103 7 5 3 2 -50 0 0 1.0 2.0 3.0 4.0 102 1 10 2 3 5 7 102 2 3 5 7 103 Supply voltage-Input voltage VS-VI (V) Output current IO (mA) Input Characteristics -5 VS = 20V -4 Input current II (mA) -3 Ta = -20C Ta = 25C -2 -1 Ta = 75C 0 0 5 10 15 20 Supply voltage-Input voltage VS-VI (V) Aug. 1999 |
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