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| HGTP12N60C3D, HGT1S12N60C3DS Data Sheet January 2000 File Number 4261.1 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti-parallel with the IGBT is the development type TA49188. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49182. Features * 24A, 600V at TC = 25oC * Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns * Short Circuit Rating * Low Conduction Loss * Hyperfast Anti-Parallel Diode Packaging JEDEC TO-220AB E C G COLLECTOR (FLANGE) Ordering Information PART NUMBER HGTP12N60C3D HGT1S12N60C3DS PACKAGE TO-220AB TO-263AB BRAND 12N60C3D 12N60C3D JEDEC TO-263AB COLLECTOR (FLANGE) NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263 variant in Tape and Reel, i.e., HGT1S12N60C3DS9A. G Symbol C E G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 2000 HGTP12N60C3D, HGT1S12N60C3DS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified ALL TYPES Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Average Diode Forward Current at 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I(AVG) Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 600 24 12 12 96 20 30 24A at 600V 104 0.83 -40 to 150 260 4 13 UNITS V A A A A V V W W/oC oC oC s s CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES TC = 25oC TC = 150oC TC = 25oC TC = 150oC TC = 25oC TC = 150oC MIN 600 3.0 VCE(PK) = 480V VCE(PK) = 600V 80 24 TYP 1.65 1.85 1.80 2.0 5.0 MAX 250 2.0 2.0 2.2 2.2 2.4 6.0 100 UNITS V A mA V V V V V nA A A Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110, VGE = 15V IC = 15A, VGE = 15V Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA VGE(TH) IGES SSOA IC = 250A, VCE = VGE VGE = 20V TJ = 150oC, VGE = 15V, RG = 25, L = 100H Gate to Emitter Plateau Voltage On-State Gate Charge VGEP Qg(ON) IC = IC110, VCE = 0.5 BVCES IC = IC110, VCE = 0.5 BVCES TJ = 150oC, ICE = IC110, VCE(PK) = 0.8 BVCES, VGE = 15V, RG = 25, L = 100H VGE = 15V VGE = 20V - 7.6 48 62 28 20 270 210 380 900 1.7 55 71 400 275 2.1 V nC nC ns ns ns ns J J V Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Diode Forward Voltage td(ON)I tri td(OFF)I tfi EON EOFF VEC IEC = 12A - 2 HGTP12N60C3D, HGT1S12N60C3DS Electrical Specifications PARAMETER Diode Reverse Recovery Time TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL trr TEST CONDITIONS IEC = 12A, dIEC/dt = 200A/s IEC = 1.0A, dIEC/dt = 200A/s Thermal Resistance RJC IGBT Diode NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse, and ending at the point where the collector current equals zero (ICE = 0A). This family of devices was tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due to diode recovery. MIN TYP 32 23 MAX 40 30 1.2 1.9 UNITS ns ns oC/W oC/W Typical Performance Curves ICE, COLLECTOR TO EMITTER CURRENT (A) 80 DUTY CYCLE <0.5%, VCE = 10V 70 PULSE DURATION = 250s 60 50 40 30 20 10 0 4 6 8 10 12 14 VGE, GATE TO EMITTER VOLTAGE (V) TC = -40oC TC = 150oC TC = 25oC ICE, COLLECTOR TO EMITTER CURRENT (A) 80 70 60 50 40 30 20 10 0 7.0V 0 2 4 6 8 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 9.0V 8.5V 8.0V 7.5V 10 10.0V PULSE DURATION = 250s, DUTY CYCLE <0.5%, TC = 25oC VGE = 15.0V 12.0V FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) TC = 25oC TC = -40oC TC = 150oC PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 10V 80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 TC = 150oC PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 15V TC = -40oC TC = 25oC VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE 3 HGTP12N60C3D, HGT1S12N60C3DS Typical Performance Curves 25 ICE , DC COLLECTOR CURRENT (A) VGE = 15V (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (s) VCE = 360V, RG = 25, TJ = 125oC 120 ISC 15 100 80 10 60 40 20 15 20 15 10 5 tSC 5 10 0 25 50 75 100 125 150 11 12 13 14 TC , CASE TEMPERATURE (oC) VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 6. SHORT CIRCUIT WITHSTAND TIME 100 td(OFF)I , TURN OFF DELAY TIME (ns) td(ON)I , TURN ON DELAY TIME (ns) TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V 400 TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V 300 VGE = 15V 50 30 VGE = 10V VGE = 10V 200 20 VGE = 15V 10 5 10 15 20 25 30 ICE , COLLECTOR TO EMITTER CURRENT (A) 100 5 10 15 20 25 30 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 200 TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V tri , TURN ON RISE TIME (ns) 100 VGE = 10V tfi , FALL TIME (ns) 300 TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V 200 VGE = 10V OR 15V VGE = 15V 10 100 90 80 5 10 15 20 25 30 ICE , COLLECTOR TO EMITTER CURRENT (A) 5 5 10 15 20 25 30 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN ON RISE TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN OFF FALL TIME vs COLLECTOR TO EMITTER CURRENT 4 ISC, PEAK SHORT CIRCUIT CURRENT (A) 20 140 HGTP12N60C3D, HGT1S12N60C3DS Typical Performance Curves 2.0 EON , TURN ON ENERGY LOSS (mJ) TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V 1.5 VGE = 10V 1.0 EOFF, TURN OFF ENERGY LOSS (mJ) (Continued) 3.0 2.5 2.0 1.5 TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V VGE = 10V or 15V 1.0 0.5 0 VGE = 15V 0.5 0 5 10 15 20 25 30 5 10 15 20 25 30 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 12. TURN OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT fMAX , OPERATING FREQUENCY (kHz) 100 VGE = 10V TJ = 150oC, TC = 75oC RG = 25, L = 100H ICE, COLLECTOR TO EMITTER CURRENT (A) 200 100 TJ = 150oC, VGE = 15V, RG = 25, L = 100H 80 VGE = 15V fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RJC = 1.2oC/W 1 5 10 20 30 ICE, COLLECTOR TO EMITTER CURRENT (A) 60 LIMITED BY CIRCUIT 40 10 20 0 0 100 200 300 400 500 600 VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 14. SWITCHING SAFE OPERATING AREA 2500 FREQUENCY = 1MHz 2000 C, CAPACITANCE (pF) CIES 1500 VGE, GATE TO EMITTER VOLTAGE (V) 15 IG REF = 1.276mA, RL = 50, TC = 25oC 12 VCE = 600V 9 1000 6 VCE = 200V 3 VCE = 400V 500 CRES 0 0 5 10 15 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) COES 0 0 10 20 30 40 50 60 Qg , GATE CHARGE (nC) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE FIGURE 16. GATE CHARGE WAVEFORMS 5 HGTP12N60C3D, HGT1S12N60C3DS Typical Performance Curves ZJC , NORMALIZED THERMAL RESPONSE 100 0.5 (Continued) 0.2 10-1 0.1 0.05 0.02 0.01 SINGLE PULSE 10-2 -5 10 10-4 10-3 10-2 DUTY FACTOR, D = t1 / t2 PEAK TJ = PD x ZJC x RJC + TC 10-1 100 PD t2 101 t1 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE 50 IEC , FORWARD CURRENT (A) 35 30 25oC tR , RECOVERY TIMES (ns) 25 20 15 10 5 TC = 25oC, dIEC/dt = 200A/ms trr 40 30 100oC ta 20 150oC tb 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0 5 10 15 20 IEC , FORWARD CURRENT (A) VEC , FORWARD VOLTAGE (V) FIGURE 18. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT Test Circuit and Waveform HGTP12N60C3D 90% VGE L = 100H VCE RG = 25 + VDD = 480V 90% ICE 10% td(OFF)I tfi tri td(ON)I EOFF 10% EON FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS 6 HGTP12N60C3D, HGT1S12N60C3DS Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBD LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means, for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener Diode from gate to emitter. If gate protection is required, an external Zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. tD(OFF)I and tD(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 21. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 7 ECCOSORBD is a Trademark of Emerson and Cumming, Inc. |
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