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2SD1759 / 2SD1861
Transistors
Power transistor (40V, 2A)
2SD1759 / 2SD1861
!Features 1) Darlington connection for high DC current gain. 2) Built-in 4k resistor between base and emitter. 3) Complements the 2SB1183 / 2SB1239. !External dimensions (Units : mm)
2SD1759
0.75
5.5 1.5
(3) (2) (1)
2.3
0.9
0.9
0.65
2.3
!Equivalent circuit
1.0 0.5
C
0.5 1.0 0.9 14.5 4.4
1.5 2.5 9.5
B
ROHM : CPT3 EIAJ : SC-63
4k
RBE
(1) Base (2) Collector (3) Emitter
C : Collector B : Base E : Emitter
E
2SD1861
6.8 2.5
!Absolute maximum ratings (Ta=25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature 2SD1861 2SD1759 PC Tj Tstg Symbol VCBO VCER VEBO IC Limits 40 40 5 2 3 1 1 10 150 -55~+150 Unit V V(RBE=10k) V A(DC) A(Pulse) W W(TC=25C) C C
1 2
0.65Max.
0.5 (1) (2) (3) 2.54 2.54
1.05
2.3
0.45
0.8Min.
Taping specifications
ROHM : ATV
1 Single pulse PW=10ms 2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
(1) Emitter (2) Collector (3) Base
!Packaging specifications and hFE
Type Package hFE Code Basic ordering unit (pieces) 2SD1759 CPT3 1k~200k TL 2500 2SD1861 ATV 1k~ TV2 2500
!Electrical characteristics (Ta=25C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE Cob Min. 40 40 5 - - - 1000 1000 - Typ. - - - - - - - - 11 Max. - - - 1 1 1.5 20000 - - Unit V V V A A V - - pF Conditions IC=50A IC=1mA , RBE=10k IE=50A VCB=24V VEB=4V IC/IB=0.6mA/1.2mA VCE/IC=3V/0.5A VCB=10V , IE=0A , f=1MHz
DC current transfer ratio
Output capacitance
2SD1759 2SD1861
5.1 6.5
C0.5

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