 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| J/SST201 Series N-Channel JFETs J201 J202 J204 Product Summary Part Number J/SST201 J/SST202 J/SST204 SST201 SST202 SST204 VGS(off) (V) -0.3 to -1.5 -0.8 to -4 -0.3 to -2 V(BR)GSS Min (V) -40 -40 -25 gfs Min (mS) 0.5 1 0.5 IDSS Min (mA) 0.2 0.9 0.2 Features D D D D Low Cutoff Voltage: J201 <1.5 V High Input Impedance Very Low Noise High Gain: AV = 80 @ 20 mA Benefits D Full Performance from Low Voltage Power Supply: Down to 1.5 V D Low Signal Loss/System Error D High System Sensitivity D High Quality Low-Level Signal Amplification Applications D High-Gain, Low-Noise Amplifiers D Low-Current, Low-Voltage Battery-Powered Amplifiers D Infrared Detector Amplifiers D Ultra High Input Impedance Pre-Amplifiers Description The J/SST201 series features low leakage, very low noise, and low cutoff voltage for use with low-level power supplies. The J/SST201 is excellent for battery powered equipment and low current amplifiers. The J series, TO-226 (TO-92) plastic package, provides low cost, while the SST series, TO-236 (SOT-23) package, provides surface-mount capability. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information). TO-226AA (TO-92) D 1 D S 2 S G 3 Top View Top View J201 J202 J204 SST201 (P1)* SST202 (P2)* SST204 (P4)* *Marking Code for TO-236 2 1 3 G TO-236 (SOT-23) For similar products in TO-206AA (TO-18) packaging, see the 2N4338/4339/4340/4341 data sheet. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70233. Applications information may also be obtained via FaxBack, request document #70595 and document #70599. Siliconix P-37995--Rev. D, 11-Aug-94 1 J/SST201 Series Absolute Maximum Ratings Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . -40 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C Specificationsa Limits J/SST201 J/SST202 J/SST204d Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Gate Operating Current Drain Cutoff Current Gate-Source Forward Voltage Symbol Test Conditions Typb Min Max Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG ID(off) VGS(F) IG = -1 mA , VDS = 0 V VDS = 15 V, ID = 10 nA VDS = 15 V, VGS = 0 V VGS = -20 V, VDS = 0 V TA = 125_C VDG = 10 V, ID = 0.1 mA VDS = 15 V, VGS = -5 V IG = 1 mA , VDS = 0 V -2 -1 -2 2 0.7 -40 -0.3 0.2 -1.5 1 -100 -40 -0.8 0.9 -4 4.5 -100 -25 -0.3 0.2 -2 3 -100 V mA pA nA pA V Dynamic Common-Source Forward Transconductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs Ciss Crss en VDS = 15 V, VGS = 0 V f = 1 kHz VDS = 15 V, VGS = 0 V S f = 1 MHz VDS = 10 V, VGS = 0 V f = 1 kHz 4.5 pF 1.3 6 nV Hz NPA NH 0.5 1 0.5 mS Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v300 ms duty cycle v3%. d. See 2N/SST5484 Series for J204 typical characteristic curves. 2 Siliconix P-37995--Rev. D, 11-Aug-94 J/SST201 Series Typical Characteristics (25_C Unless Noted) 10 I DSS - Saturation Drain Current (mA) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 5 g fs - Forward Transconductance (mS) Gate Leakage Current 10 nA IG @ ID = 500 mA ID = 100 mA 1 nA I G - Gate Leakage (A) TA = 125_C IGSS @ 125_C ID = 500 mA 10 pA ID = 100 mA 1 pA TA = 25_C IGSS @ 25_C 8 4 6 gfs 4 IDSS 3 100 pA 2 2 1 0 0 -1 -2 -3 -4 -5 VGS(off) - Gate-Source Cutoff Voltage (V) 0 0.1 pA 0 15 VDG - Drain-Gate Voltage (V) 30 1500 rDS(on) - Drain-Source On-Resistance ( W ) On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 10 g fs - Forward Transconductance (mS) g os - Output Conductance ( mS) 2 Common-Source Forward Transconductance vs. Drain Current VGS(off) = -1.5 V VDS = 10 V f = 1 kHz 1200 gos 8 1.6 TA = -55_C 1.2 25_C 0.8 900 rDS 600 6 4 300 rDS @ ID = 100 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz 0 0 -1 -2 -3 -4 -5 VGS(off) - Gate-Source Cutoff Voltage (V) 2 0.4 125_C 0 0 0.01 0.1 ID - Drain Current (mA) 1 Output Characteristics 400 VGS(off) = -0.7 V 360 I D - Drain Current ( m A) I D - Drain Current (mA) -0.1 V VGS = 0 V 1.6 2 Output Characteristics VGS(off) = -1.5 V VGS = 0 V 1.2 -0.3 V 0.8 -0.6 V 0.4 -1.2 V 0 -0.9 V 240 160 -0.2 V -0.3 V 80 -0.5 V 0 0 4 8 12 16 20 VDS - Drain-Source Voltage (V) -0.4 V 0 4 8 12 16 20 VDS - Drain-Source Voltage (V) Siliconix P-37995--Rev. D, 11-Aug-94 3 J/SST201 Series Typical Characteristics (25_C Unless Noted) Transfer Characteristics 500 VGS(off) = -0.7 V I D - Drain Current ( m A) 400 I D - Drain Current (mA) TA = -55_C 25_C 200 125_C 100 VDS = 10 V 1.6 TA = -55_C 1.2 25_C 0.8 2 Transfer Characteristics VGS(off) = -1.5 V VDS = 10 V 300 0.4 125_C 0 0 -0.1 -0.2 -0.3 -0.4 -0.5 VGS - Gate-Source Voltage (V) 0 0 -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate-Source Voltage (V) Transconductance vs. Gate-Source Voltage 1.5 g fs - Forward Transconductance (mS) g fs - Forward Transconductance (mS) VGS(off) = -0.7 V 1.2 TA = -55_C 0.9 25_C VDS = 10 V f = 1 kHz 4 Transconductance vs. Gate-Source Voltage VGS(off) = -1.5 V VDS = 10 V f = 1 kHz 3.2 2.4 TA = -55_C 1.6 25_C 0.6 125_C 0.3 0.8 125_C 0 0 0 -0.1 -0.2 -0.3 -0.4 -0.5 VGS - Gate-Source Voltage (V) 0 -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate-Source Voltage (V) 200 Circuit Voltage Gain vs. Drain Current g fs R L AV + 1 ) R g L os Assume VDD = 15 V, VDS = 5 V 10 V RL + I D rDS(on) - Drain-Source On-Resistance ( W ) 2000 On-Resistance vs. Drain Current 160 A V - Voltage Gain 1600 VGS(off) = -0.7 V 120 1200 80 -1.5 V 40 VGS(off) = -0.7 V 800 -1.5 V 400 0 0.01 0.1 ID - Drain Current (mA) 1 0 0.01 0.1 ID - Drain Current (mA) 1 4 Siliconix P-37995--Rev. D, 11-Aug-94 J/SST201 Series Typical Characteristics (25_C Unless Noted) 10 Common-Source Input Capacitance vs. Gate-Source Voltage f = 1 MHz C rss - Reverse Feedback Capacitance (pF) 5 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage f = 1 MHz C iss - Input Capacitance (pF) 8 4 6 VDS = 0 V 4 10 V 2 3 VDS = 0 V 2 1 10 V 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 3 Output Conductance vs. Drain Current VGS(off) = -1.5 V VDS = 10 V f = 1 kHz 20 Equivalent Input Noise Voltage vs. Frequency VDS = 10 V g os - Output Conductance ( mS) 2.4 (nV / Hz) 16 ID @ 100 mA 1.8 TA = -55_C 0.8 25_C 12 e n - Noise Voltage 8 VGS = 0 V 4 0.4 125_C 0 0.01 0.1 ID - Drain Current (mA) 1 0 10 100 1k f - Frequency (Hz) 10 k 100 k 300 Output Characteristics VGS(off) = -0.7 V VGS = 0 V 1.0 Output Characteristics VGS(off) = -1.5 V 240 I D - Drain Current ( m A) -0.1 180 -0.2 120 -0.5 -0.3 -0.4 I D - Drain Current (mA) 0.8 VGS = 0 V 0.6 -0.3 0.4 -0.6 60 0.2 -0.9 -1.2 0 0 0.1 0.2 0.3 0.4 0.5 VDS - Drain-Source Voltage (V) 0 0 0.2 0.4 0.6 0.8 1.0 VDS - Drain-Source Voltage (V) Siliconix P-37995--Rev. D, 11-Aug-94 5 |
Price & Availability of SST202
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |