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Provisional Data Sheet No. PD - 9.885B
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET TRANSISTOR
-100Volt, 0.075, RAD HARD HEXFET
International Rectifier's P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability at total radiation doses as high as 3 x 105 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier's P-Channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry. RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
(R)
IRHN9150 IRHN93150
P-CHANNEL
RAD HARD
Product Summary
Part Number IRHN9150 IRHN93150 BVDSS -100V -100V RDS(on) 0.075 0.075 ID -22A -22A
Features:
n n n n n n n n n n n n n
Radiation Hardened up to 3 x 105 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Lightweight
Absolute Maximum Ratings
ID @ VGS = -12V, TC = 25C ID @ VGS = -12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG
Pre-Radiation
IRHN9150, IRHN93150
-22 -14 -88 150 1.2 20 500 -22 15 -23 -55 to 150 300 (0.063 in. (1.6mm) from case for 10 sec.) 2.6 (typical)
Parameter
Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight
Units A
W W/K V mJ A mJ V/ns
o
C
g 11/4/97
IRHN9150, IRHN93150 Device
Pre-Radiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
-100 -- -- -- -2.0 11 -- -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- -0.093 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.8 2.8 -- -- 0.075 0.080 -4.0 -- -25 -250 -100 100 200 35 48 40 150 100 190 -- -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, ID = -14A VGS = -12V, ID = -22A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -14A VDS= 0.8 x Max Rating,VGS=0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS =-12V, ID = -22A VDS = Max Rating x 0.5 VDD = -50V, ID =-22A, RG = 2.35
IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance
nA nC
ns
ybl h M a u e f o c n e o d i Modified MOSFET s m o s ow e s r d r m e t r f ran igteitrn l i d c a c s. n h ne a n u t n e p d t d e. a oi
nH
Maue fo cne o esrd rm etr f suc pdt teedo ore a o h n f suc bnigwr ore odn ie
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
4300 1100 310
-- -- --
pF
VGS = 0V, VDS = -25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -22 -88 -3.0 250 1.5
Test Conditions
Modified MOSFET symbol show n t e i t gr ig h ne a l r e s p n j n t o r c i i r. ev r e - u c i n e t f e
A
V ns C
Tj = 25C, IS = -22A, VGS = 0V Tj = 25C, IF = -22A, di/dt -100A/s VDD -50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJ-PCB Junction-to-Case Junction-to-PC board
Min Typ Max
-- -- -- 6.6
Units
Test Conditions
0.83 K/W -- Soldered to a 1 inch square clad PC board
IRHN9150, IRHN93150 Device
Radiation Performance of P-Channel Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier uses two radiation environments. Every manufacturing lot is tested in a low dose rate (total dose) environment per MlL-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of 12 volts per note 6 and a VDSS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post-radiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1, column 1, IRHN9150. The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Both preand post-radiation performance are tested and speci-
Radiation Characteristics
fied using the same drive circuitry and test conditions in order to provide a direct comparison. It should be noted that at a radiation level of 3 x 105 Rads (Si) no changes in limits are specified in DC parameters. High dose rate testing may be done on a special request basis using a dose rate up to 1 x 1012 Rads (Si)/Sec. International Rectifier radiation hardened P-Channel HEXFETS are considered to be neutron -tolerant, as stated in MIL-PRF-19500 Group D. International Rectifier radiation hardened P-Channel HEXFETs have been characterized in heavy ion Single Event Effects (SEE) environments and the results are shown in Table 3.
Table 1. Low Dose Rate
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1 VSD
IRHN9150 IRHN93150
100K Rads (Si) 300K Rads (Si) Units
Test Conditions
VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20 V VDS=0.8 x Max Rating, VGS=0V VGS = -12V, ID = -14A TC = 25C, IS = -22A,VGS = 0V
Min Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance One Diode Forward Voltage
Max
Min -100 -2.0 -- -- -- -- --
Max -- -5.0 -100 100 -25 0.085 -3.0 V nA A V
-100 -- -2.0 -4.0 -- -100 -- 100 -- -25 -- 0.075 -- -3.0
Table 2. High Dose Rate
Parameter
VDSS IPP di/dt L1
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Drain-to-Source Voltage
Min Typ Max Min Typ Max Units Test Conditions -- -- -80 -- -- -80 V Applied drain-to-source voltage during gamma-dot -- -100 -- -- -100 -- A Peak radiation induced photo-current -- -- -800 -- -- -160 A/sec Rate of rise of photo-current 0.1 -- -- 0.5 -- -- H Circuit inductance required to limit di/dt
Table 3. Single Event Effects
Parameter
BVDSS
Typical
-100
Units
V
Ion
Ni
LET (Si) (MeV/mg/cm2)
28
Fluence Range (ions/cm2) (m)
1 x 105 ~41
VDS Bias (V)
-100
VGS Bias (V)
+5
IRHN9150, IRHN93150 Device
Pre-Radiation
100
-I D , Drain-to-Source Current (A)
-5.0V
20s PULSE WIDTH TJ = 25 C
1 10 100
-I D , Drain-to-Source Current (A)
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
100
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
-5.0V
20s PULSE WIDTH TJ = 150 C
1 10 100
10
10
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = -22A
Drain-to-Source Current (A)
2.5
TJ = 25 C
2.0
TJ = 150 C
1.5
1.0
- ID,
0.5
10 5 6 7
V DS = -50V 20s PULSE WIDTH 8 9 10
0.0 -60 -40 -20
VGS = -12V
0 20 40 60 80 100 120 140 160
- VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
TJ , Junction Temperature( C)
Fig 4. Normalized On-Resistance Vs. Temperature
IRHN9150, IRHN93150 Device
Pre-Radiation
7000
6000
-VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = -22A VDS =-80V VDS =-50V VDS =-20V
16
C, Capacitance (pF)
5000
Ciss
4000
12
3000
8
2000
Coss
4
1000
Crss
1 10 100
0
0 0 40 80
FOR TEST CIRCUIT SEE FIGURE 13
120 160 200
-VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
TJ = 150 C
10
-ID , Drain Current (A) I
100 100us
TJ = 25 C
1ms 10 10ms
1 0.0
V GS = 0 V
1.0 2.0 3.0 4.0
1 1
TC = 25 C TJ = 150 C Single Pulse
10 100 1000
-VSD ,Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRHN9150, IRHN93150 Device
Pre-Radiation
24
VDS VGS
RD
D.U.T.
+
20
-ID , Drain Current (A)
16
-12V
Pulse Width 1 s Duty Factor 0.1 %
12
Fig 10a. Switching Time Test Circuit
8
td(on) tr t d(off) tf
4
VGS 10%
0 25 50 75 100 125 150
90% VDS
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
1 D = 0.50
Thermal Response (Z thJC )
0.20 0.1 0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC
0.01
0.001 0.00001
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
-
RG
VDD
1
IRHN9150, IRHN93150 Device
Pre-Radiation
VDS
L
1200
EAS , Single Pulse Avalanche Energy (mJ)
RG
D .U .T
IA S
VD D A D R IV E R
1000
ID -9.8A -14A BOTTOM -22A TOP
-20V -12V
tp
0.0 1
800
600
15V
400
Fig 12a. Unclamped Inductive Test Circuit
IAS
200
0 25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
tp V (BR)DSS
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
-12V 12V
.2F .3F
-12V
QGS VG QGD
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
+
D.U.T.
-
VDS
IRHN9150, IRHN93150 Device
Repetitive Rating; Pulse width limited by
maximum junction temperature. Refer to current HEXFET reliability report. @ VDD = -25V, Starting TJ = 25C, EAS = [0.5 * L * (IL2) ] Peak IL = -22A, VGS = -12V, 25 RG 200 ISD -22A, di/dt -450A/s, VDD BVDSS, TJ 150C Suggested RG = 2.35 Pulse width 300 s; Duty Cycle 2% K/W = C/W W/K = W/C
Pre-Radiation
Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019. Total Dose Irradiation with VDS Bias. VDS = 0.8 rated BVDSS (pre-radiation) applied and VGS = 0 during irradiation per MlL-STD-750, method 1019. This test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 MeV), 30 nsec pulse. Process characterized by independent laboratory. All Pre-Radiation and Post-Radiation test conditions are identical to facilitate direct comparison for circuit applications.

Case Outline and Dimensions -- SMD-1
LEAD ASSIGNMENTS 1 - DRAIN 2 - GATE 3 - SOURCE
IR Case Style SMD-1 Dimensions in millimeters and (inches)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 11/97

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