|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
2SK2645-01MR N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Outline Drawings TO-220F FAP-2S Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol VDS ID ID(puls] VGS IAR *2 EAS *1 PD Tch Tstg Ratings 600 9 32 35 9 71.9 50 +150 -55 to +150 Unit V A A V A mJ W C C < *2 Tch=150C Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=1.63mH, Vcc=60V Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=600V VGS=0V VGS=35V VDS=0V ID=4.5A VGS=10V ID=4.5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=9A VGS=10V RGS=10 L=100 H Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C 9 1.0 550 7.0 1.5 Min. 600 3.5 Tch=25C Tch=125C Typ. 4.0 10 0.2 10 1.0 5.0 900 150 70 25 70 60 35 Max. 4.5 500 1.0 100 1.2 1400 230 110 40 110 90 60 Units V V A mA nA S pF 2.5 ns A V ns C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 2.5 62.5 Units C/W C/W 1 2SK2645-01MR Characteristics Power Dissipation PD=f(Tc) FUJI POWER MOSFET Safe operating area ID=f(VDS):D=0.01,Tc=25C 70 60 10 1 t=0.01 s DC 1s 10s 50 PD [W] 40 ID [A] 10 0 100s 1ms 30 20 10ms 10 -1 t D= t T 100ms 10 T 0 0 50 100 150 10 -2 10 0 10 1 10 2 10 3 Tc [ C] o VDS [V] Typical output characteristics ID=f(VDS):80s Pulse test,Tch=25C 20 VGS=20V 10V 15 8V Typical transfer characteristic ID=f(VGS):80s Pulse test,VDS=25V,Tch=25C 10 1 ID [A] ID [A] 10 7V 10 0 5 6.5V 10 6V 5.5V 5V 0 5 10 15 20 25 30 35 -1 0 10 -2 0 1 2 3 4 5 6 7 8 9 10 VDS [V] VGS [V] Typical forward transconductance gfs=f(ID):80s Pulse test,VDS=25V,Tch=25C Typical drain-source on-state resistance RDS(on)=f(ID):80s Pulse test, Tch=25C 9 VGS= 5V 5.5V 6V 8 7 6.5V 7V 10 1 6 RDS(on) [ ] gfs [s] 5 4 3 2 1 0 8V 10V 20V 10 0 10 -1 10 -1 10 0 10 1 0 5 10 15 20 ID [A] ID [A] 2 2SK2645-01MR FUJI POWER MOSFET Drain-source on-state resistance RDS(on)=f(Tch):ID=4.5A,VGS=10V 4.0 3.5 5.0 3.0 6.0 Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS max. RDS(on) [ ] VGS(th) [V] 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 o 4.0 typ. min. max. 3.0 typ. 2.0 1.0 0.0 -50 0 50 100 o 150 Tch [ C] Tch [ C] Typical gate charge characteristic VGS=f(Qg):ID=9A,Tch=25C 500 Vcc=480V 450 400 350 300V 45 40 50 10n Typical capacitances C=f(VDS):VGS=0V,f=1MHz VDS [V] 300 250 200 150 100 50 0 120V 25 20 C [F] 0V 12 c= V Vc 300 V 0 48 35 30 1n Ciss VGS [V] Coss 100p 15 10 5 0 140 10p 10 -2 -1 0 1 Crss 0 20 40 60 80 100 120 10 10 10 10 2 Qg [nC] VDS [V] Forward characteristic of reverse of diode IF=f(VSD):80s Pulse test,VGS=0V 100 Avalanche energy derating Eas=f(starting Tch):Vcc=60V,IAV=9A 10 1 80 Tch=25 C typ. 60 o IF [A] 10 0 Eas [mJ] 40 10 -1 20 10 -2 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 50 o 100 150 VSD [V] Starting Tch [ C] 3 2SK2645-01MR Transient thermal impedande Zthch=f(t) parameter:D=t/T FUJI POWER MOSFET 10 1 D=0.5 10 0 Zthch-c [K/W] 0.2 0.1 0.05 10 0.02 -1 t D= t T 0.01 0 10 -5 10 -2 -4 -3 -2 -1 0 T 10 10 10 10 10 10 1 t [s] 4 |
Price & Availability of 2SK2645 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |