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InSb Hall Element HW-108A *High-sensitivity InSb Hall element. *Super mini-mold SMT package (fits SOT343 land pattern). *Shipped in packet-tape reel (4000pcs per reel). Note : It is requested to read and accept "IMPORTANT NOTICE". Please be aware that AKE products are not intended for use in life support equipment, devices, or systems. Use of AKE products in such applications requires the advance written approval of the appropriate AKE officer. Certain applications using semiconductor devices may involve potential risks of personal injury, property damage, or loss of life. In order to minimize these risks, adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. Inclusion of AKE products in such applications is understood to be fully at the risk of the customer using AKE devices or systems. *Absolute Maximum Ratings Item Symbol Limit Unit Max. Input Current Ic Const. Current Drive 20 mA Operating Temp. Range Topr. -40 to +110 C Storage Temp. Range Tstg. -40 to +125 C *Classification of Output Hall Voltage (VH) Rank VH [ mV ] 122 144 168 196 228 266 to to to to to to 150 174 204 236 274 320 B=50mT, Vc=IV Constant Voltage Drive Conditions *Electrical Characteristics(Ta=25C) Item Symbol Conditions Min. Typ. Max. Unit A B C Output Hall Voltage VH Const. Voltage Drive B=50mT, Vc=IV B=0mT, Ic=0.1mA B=0mT, Ic=0.1mA B=0mT, Vc=IV 122 320 mV D E Input Resistance Output Resistance Offset Voltage Rin Rout Vos 250 250 -7 450 450 F Note : When ordering, specify 3-rank or wider range(e*g*,BCD). *Input Current Derating Curve +7 mV Input Resistance Temp. Coefficient of VH VH B=50mT, Ic=5mA 20 -1.8 %/C Input Current(mA) Rin : 250 to 450 Temp. Coefficient of Rin Rin B=0mT, Ic=0.1mA -1.8 %/C 10 Dielectric Strength 100V D.C 1.0 M Notes : 1. VH = VHM - Vos (VHM:meter indication) 1 -V 2. VH = VH (T1) X VH (T3) - T H) (T2) X 100 (T3 2 1 -R 3. Rin = Rin (T1) X Rin (T3) - T in (T2) X 100 (T ) 3 2 T1 = 20C, T2 = 0C, T3 = 40C 0 -60 -40 - 20 0 20 40 60 80 100 120 Ambient Temperature.(C) Note : Rin of Hall element decreases rapidly as ambient temperature increases. Ensure compliance with input current derating curve envelope, throughout the operating temperature range. 0.25 *Dimensional Drawing (mm) 2.10.1 0.4 1.3 0.4 0.3 *Input Voltage Derating Curve Input Resistance 2.0 Input Voltage(V) Rin : 250 to 450 2 2.10.2 1.250.1 1 0 to 0.1 N 5 5 3 4 0.1 1.0 5 0.8 0 +0.1 Pinning 5 0 -60 3 4 () () -40 - 20 0 20 40 60 80 100 120 Input Output 1() 2() Ambient Temperature.(C) Note : For constant-voltage drive, stay within this input voltage derating curve envelope. 19 HW-108A a *Characteristic Curves Rin-T 2000 1800 Input Resistance:Rin( ) Output Voltage:VH(mV) VH-B 600.0 500.0 400.0 300.0 Vin 200.0 100.0 0.0 0 Ic const Vc const Ic = 5 (mA) Vc = 1 (V) Ta = 25 (C) 1600 1400 1200 1000 800 600 400 200 0 -50 0 50 Ambient Temperature(C) Ic c 100 150 10 20 30 40 50 Magnetic Flux Density B (mT) VH-T 2000 1750 Output Voltage:VH(mV) Ic const Vc const VH-Vc, VH-Ic 1200 1000 800 600 400 200 0 0.0 5 0.5 10 1.0 Ic (mA) Input Current Vc (V) Input Voltage Ic const Vc const B = 50 (mT) Ta = 25 (C) Ic 1500 1250 1000 750 500 250 0 -50 Vin Ic Ic = 5 (mA) Vc = 1 (V) B = 50 (mT) Output Voltage:VH(mV) Vin g 15 1.5 20 Ic:(mA) 2.0 Vc:(V) 0 50 Ambient Temperature(C) 100 150 VOS-T 40 Ic const Vc const VOS-Vc, VOS-Ic 20 18 Offset Voltage:Vos(mV) Ic const Vc const B = 0 (mT) Ta = 25 (C) Offset Voltage:Vos(mV) 30 Ic 20 Ic = 5 (mA) Vc = 1 (V) B = 0 (mT) 16 14 12 10 8 6 4 2 Ic i Vin 10 Vin 0 -50 0 50 Ambient Temperature(C) 100 150 0 0.0 5 0.5 10 1.0 Ic (mA) Input Current Vc (V) Input Voltage 15 1.5 20 Ic:(mA) 2.0 Vc:(V) *Magnetic Flux Density 1(mT)=10(G) In This Example : Rin=350( ), Vos=4.7(mV), Vc=1(V) 20 |
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