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| AM81719-040 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS .REFRACTORY/ .EMI .I .OVERLAY .METAL/ .P PRELIMINARY DAT A GOLD METALLIZATION TTER SITE BALLASTED NPUT/OUTPUT MATCHING GEOMETRY C ERAMIC HERMETIC PACKAGE OUT = 40 W MIN. WITH 7 dB GAIN .400 X .400 2 LF L (M228) hermetically sealed ORDER CO DE AM81719-040 BRANDING 81719-40 PIN CONNECTION DESCRIPTION The AM81719-040 is a high power silicon NPN bipolar transistor designed for Class C, CW communications and telemetry applications in the 1.75 - 1.85 GHz frequency range. An emitter-ballasted refractory-gold overlay die geometry with computerized automatic wirebonding is employed to ensure long-term reliability and product consistency. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol Parameter Valu e Un it PDISS IC VCC TJ T STG Power Dissipation* Device Current* Collector-Supply Voltage* Junction Temperature Storage Temperature 79.5 4.8 30 200 - 65 to +200 W A V C C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 2.2 C/W *Applies only to rated RF amplifier operation July 6, 1995 1/3 AM81719-040 ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC Symbo l T est Co nditions Value Min . T yp. Max. Unit BVCBO BVEBO BVCES ICBO hFE IC = 50 mA IE = 4 mA IC = 80 mA VCB = 28 V VCE = 30 V IE = 0 mA IC = 0 mA 42 3.5 45 -- -- -- -- -- -- -- -- -- 8 300 V V V mA -- IC = 2.5 A 30 DYNAMIC Symbo l Test Cond ition s Valu e Min. T yp. Max. Un it POUT c GP f = 1750 - 1850 MHz f = 1750 - 1850 MHz f = 1750 - 1850 MHz PIN = 8.0 W PIN = 8.0 W PIN = 8.0 W VCC = 28 V VCC = 28 V VCC = 28 V 40 43 6.7 -- -- -- -- -- -- W % dB TEST CIRCUIT Ref.: Dwg. No. 101-000698 July 6, 1995 2/3 AM81719-040 PACKAGE MECHANICAL DATA Ref: Dwg. No. 12-0228 rev. B Information furnished is believed to be accurate and reliable. However, SGS-T HOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c)1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. July 6, 1995 3/3 |
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