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BZV48C16 TSOP1 HC5526CP LT1431C 3004362 N5236B G530160 256AL
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  Datasheet File OCR Text:
 2SC4466
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1693) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4466 120 80 6 6 3 60(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
Application : Audio and General Purpose
(Ta=25C) 2SC4466 10max 10max 80min 50min 1.5max 20typ 110typ V pF
20.0min 4.0max
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB hFE Rank Conditions VCB=120V VEB=6V IC=50mA VCE=4V, IC=2A IC=2A, IB=0.2A VCE=12V, IE=-0.5A VCB=10V, f=1MHz
External Dimensions MT-100(TO3P)
5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Unit
A A
19.90.3
4.0
V
a b
o3.20.1
MHz
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4
O(50 to100), P(70 to140), Y(90 to180)
5.450.1 B C E
sTypical Switching Characteristics (Common Emitter)
VCC (V) 30 RL () 10 IC (A) 3 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.3 IB2 (A) -0.3 ton (s) 0.16typ tstg (s) 2.60typ tf (s) 0.34typ
5.450.1
Weight : Approx 6.0g a. Type No. b. Lot No.
IC - VCE Characteristics (Typical)
0m A
15 0m A
1 m 00 A
A 80m
VCE( sat ) - IB Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at)( V ) 3
I C - V BE Temperature Characteristics (Typical)
6 (V C E= 4V)
6
20
Collector Current I C (A)
50 mA
Collector Current I C( A)
4
2
4
30mA
mp) p)
e Te
Cas
IC=6A 4A 2A 0 0 0.5 1.0 1.5 0 0
0
0
1
2
3
4
-30C
25C
125
IB=10mA
C (
(Cas
(Case
2
20mA
1
2
e Tem
1 Base-Emittor Voltage V B E( V)
Temp
)
2
Collector-Emitter Voltage V C E( V)
Base Current I B( A)
hFE - IC Characteristics (Typical)
(V C E= 4V) 300 DC Curr ent Gain h F E
h FE - I C Temperature Characteristics (Typical)
(V C E= 4V) 200 125C DC Cur rent Gain h FE
j - a( C/W)
j-a - t Characteristics
5
100
25C
100
Typ
-30C 50
Transient Thermal Resistance
1
50
0.5 0.3
30 0.02
0.1
0.5
1
56
20 0.02
0.1
0.5
1
56
1
10
100 Time t(ms)
1000 2000
Collector Current I C( A)
Collector Current I C( A)
fT - IE Characteristics (Typical)
(V C E= 12V) 40 20 10 Cu t-off Fre quen cy f T( M H Z) 30 Collector Curr ent I C( A) 5
Safe Operating Area (Single Pulse)
60
P c - T a Derating
10
DC
10
M aximum Power Dissipa ti on P C( W)
1m s ms 0m s
W ith
Typ
40
In fin ite he
20
at si
1 0.5 Without Heatsink Natural Cooling
nk
20
10
Without Heatsink 0 -0.02 0.1 -0.1 -1 -6 5 10 50 100 Emitter C urrent I E( A) Collector-Emitter Voltage V C E( V) 3.5 0 0 25 50 75 100 125 150
Ambient Temperature Ta(C)
106


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