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| MITSUBISHI TRANSISTOR MODULES QM5HG-24 MEDIUM POWER SWITCHING USE NON-INSULATED TYPE QM5HG-24 * * * * IC Collector current ............................ 5A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain................................. 5 Non-Insulated Type APPLICATION Base driver for High voltage transistor modules OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 15.6 13.6 12.6 2 1 4.5 1.5 C 9.6 5 5 20 B 2 2 E 4 0.7 20 2 1.8 4.4 B C E 0.6 2.8 1 5.45 5.45 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM5HG-24 MEDIUM POWER SWITCHING USE NON-INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX VCBO VEBO IC PC IB Tj Tstg -- -- Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector dissipation Base current Junction temperature Storage temperature Mounting torque Weight (Tj=25C, unless otherwise noted) Conditions VEB=2V Emitter open Collector open DC TC=25C DC Ratings 1200 1200 7 5.0 100 2 -40~+150 -40~+125 Mounting screw M3 Typical value 0.59~0.98 6~10 5 Unit V V V A W A C C N*m kg*cm g ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=1200V, VEB=2V VCB=1200V, Emitter open VEB=7V IC=3A, IB=0.6A IC=3A, VCE=1V Min. -- -- -- -- -- 5 -- VCC=600V, IC=3A, IB1=0.6A, -IB2=1.2A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 50 1.0 1.5 -- 1.0 4.0 0.8 1.25 -- 0.5 Unit mA mA mA V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM5HG-24 MEDIUM POWER SWITCHING USE NON-INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 8 Tj=25C 7 6 5 4 3 2 1 0 0 1 2 3 4 5 IB=0.5A IB=400mA IB=200mA IB=100mA IB=1A 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 10-1 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) Tj=25C Tj=125C VCE=5.0V COLLECTOR CURRENT IC (A) DC CURRENT GAIN hFE VCE=1V 2 3 4 5 7 10 0 2 3 4 5 7 10 1 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 2 10 0 7 5 4 3 2 VCE(sat) 10 -1 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 tf VCC=600V IB1=0.6A --IB2=1.2A Tj=25C Tj=125C ton, ts, tf (s) VBE(sat) ts SATURATION VOLTAGE 7 5 4 3 2 10 SWITCHING TIME IB=400mA Tj=25C Tj=125C -1 ton 2 3 4 5 7 10 0 2 3 4 5 7 101 10-1 4 5 7 10 0 2 3 4 5 7 10 1 2 34 COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) Feb.1999 |
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