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PD - 94213
IRFP254N
HEXFET(R) Power MOSFET
l l l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements
D
VDSS = 250V RDS(on) = 125m
G S
ID = 23A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
23 16 92 220 1.5 20 300 14 22 7.4 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.24 ---
Max.
0.68 --- 40
Units
C/W
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1
7/20/01
IRFP254N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. 250 --- --- 2.0 15 --- --- --- --- --- --- --- --- --- --- ---
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 125 m VGS = 10V, ID = 14A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 14A 25 VDS = 250V, VGS = 0V A 250 VDS = 200V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 100 ID = 14A 17 nC VDS = 200V 44 VGS = 10V, See Fig. 6 and 13 --- VDD = 125V --- ID = 14A ns --- RG = 3.6 --- VGS = 10V, See Fig. 10 D Between lead, 5.0 --- --- 6mm (0.25in.) nH G from package --- 13 --- and center of die contact S --- 2040 --- VGS = 0V --- 260 --- VDS = 25V --- 62 --- pF = 1.0MHz, See Fig. 5
Typ. --- 0.33 --- --- --- --- --- --- --- --- --- --- 14 34 37 29
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 23 --- --- showing the A G integral reverse --- --- 92 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 14A, VGS = 0V --- 210 310 ns TJ = 25C, IF = 14A --- 1.7 2.6 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
ISD 14A, di/dt 460A/s, VDD V(BR)DSS,
TJ 175C
Starting TJ = 25C, L = 3.1mH
RG = 25, IAS = 14A,VGS=10V
Pulse width 400s; duty cycle 2%.
2
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IRFP254N
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
10
1
4.5V
4.5V
0.1 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
1 0.1
20s PULSE WIDTH TJ = 175 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
4.0
ID = 23A
TJ = 175 C
RDS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
3.0
10
2.0
TJ = 25 C
1.0
1 4.0
V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFP254N
4000 20 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds
ID = 14A VDS = 200V VDS = 125V VDS = 50V
VGS , Gate-to-Source Voltage (V)
16
3000
C, Capacitance(pF)
Ciss
12
2000
Coss
1000
8
Crss
4
0 1 10 100 1000 0 0 20 40
FOR TEST CIRCUIT SEE FIGURE 13
60 80 100
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
TJ = 175 C
ISD , Reverse Drain Current (A)
ID , Drain-to-Source Current (A)
100
10
10
100sec 1msec
1
TJ = 25 C
1 Tc = 25C Tj = 175C Single Pulse 1 10 100 10msec
0.1 0.2
V GS = 0 V
0.4 0.6 0.8 1.0 1.2
0.1
1000
10000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFP254N
25
VDS
20
RD
VGS RG
D.U.T.
+
I D , Drain Current (A)
-VDD
15
VGS
10
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
5
VDS 90%
0 25 50 75 100 125 150 175
TC , Case Temperature
( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50
0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFP254N
1 5V
600
EAS , Single Pulse Avalanche Energy (mJ)
TOP
500
VDS
L
D R IV E R
BOTTOM
ID 5.6A 9.8A 14A
400
RG
VV 2 0GS
D .U .T IA S tp 0 .0 1
+ - VD D
A
300
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS tp
200
100
0 25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
VGS
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFP254N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
+
-
+
RG VGS * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test
+ VDD
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive P.W. Period D=
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET(R) power MOSFETs
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7
IRFP254N
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
15.90 (.626) 15.30 (.602) -B3.65 (.143) 3.55 (.140) 0.25 (.010) M -A5.50 (.217) 20.30 (.800) 19.70 (.775) 1 2 3 -C14.80 (.583) 14.20 (.559) 4.30 (.170) 3.70 (.145)
L E A D A S S IG N M E N T S 1 2 3 4 G A TE D R A IN S O UR C E D R A IN
-DDBM 5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4
2X
5.50 (.217) 4.50 (.177)
N OTE S : 1 D IM E N S IO N IN G & T O LE R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O JE D E C O U T L IN E T O -24 7 -A C .
2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X
1.40 (.056) 3X 1.00 (.039) 0.25 (.010) M 3.40 (.133) 3.00 (.118) C AS
0.80 (.031) 3X 0.40 (.016) 2.60 (.102) 2.20 (.087)
TO-247AC Part Marking Information
EXAMPLE: T HIS IS AN IRFPE30 WIT H AS SEMBLY LOT CODE 5657 ASS EMBLED ON WW 35, 2000 IN T HE ASS EMBLY LINE "H" PART NUMBER INT ERNAT IONAL RECT IF IER LOGO ASS EMBLY LOT CODE
IRFPE30
56 035H 57
DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 7/01
8
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