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 PD- 95299
IRF7342D2PBF
Co-packaged HEXFET(R) Power MOSFET and Schottky Diode l Ideal For Buck Regulator Applications l P-Channel HEXFET(R) l Low VF Schottky Rectifier l SO-8 Footprint l Lead-Free Description
l
FETKY MOSFET & Schottky Diode
A A S G
1 2 3 4 8 7 6 5
TM
K K D D
VDSS = -55V RDS(on) = 105m Schottky Vf = 0.61V
Top View
The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.
SO-8
Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted)
Parameter
ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current A Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt A Junction and Storage Temperature Range
Maximum
-3.4 -2.7 -27 2.0 1.3 16 20 -5.0 -55 to +150
Units
A
W mW/C V V/ns C
Thermal Resistance
Symbol
RJL RJA RJA
Parameter
Junction-to-Drain Lead, MOSFET Junction-to-Ambient , MOSFET Junction-to-Ambient , SCHOTTKY
Typ.
--- --- ---
Max.
20 62.5 62.5
Units
C/W
Notes: Repetitive rating - pulse width limited by max. junction temperature (see fig. 11) ISD -3.4A, di/dt -150A/s, VDD V(BR)DSS, TJ 150C Pulse width 400s - duty cycle 2% Surface mounted on 1 inch square copper board, t 10sec.
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1
10/13/04
IRF7342D2PBF
V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -55 --- --- --- -1.0 3.3 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.054 95 150 --- --- --- --- --- --- 26 3.0 8.4 14 10 43 22 690 210 86 Typ. --- --- --- 54 85 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 105 VGS = -10V, ID = -3.4A m 170 VGS = -4.5V, ID = -2.7A --- V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -3.1A -2.0 VDS = -44V, VGS = 0V A -25 VDS = -44V, VGS = 0V, TJ = 70C -100 VGS = -20V nA 100 VGS = 20V 38 ID = -3.1A 4.5 nC VDS = -44V 13 VGS = -10V, See Fig. 6 & 14 22 VDD = -28V 15 ID = -1.0A ns 64 RG = 6.0 32 VGS = -10V, --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 Max. Units Conditions -2.0 A -27 -1.2 V TJ = 25C, IS = -2.0A, VGS = 0V 80 ns TJ = 25C, IF = -2.0A 130 nC di/dt = 100A/s Conditions 50% Duty Cycle. Rectangular Wave, TA = 57C See Fig. 21 5s sine or 3s Rect. pulse Following any rated 10ms sine or 6ms Rect. pulse load condition & with Vrrm applied
MOSFET Source-Drain Ratings and Characteristics
IS
I SM
VSD t rr Q rr
Parameter Min. Continuous Source Current(Body Diode) --- Pulsed Source Current (Body Diode) --- Body Diode Forward Voltage --- Reverse Recovery Time (Body Diode) --- Reverse Recovery Charge --- Parameter Max. Average Forward Current Max. peak one cycle Non-repetitive Surge current
Schottky Diode Maximum Ratings
If (av)
ISM
Max. Units 3.0 A 490 70 A
Schottky Diode Electrical Specifications
Vfm Parameter Max. Forward Voltage Drop Max. Units 0.61 0.76 V 0.53 0.65 60 V 2.0 mA 30 145 pF Conditions If = 3.0A, Tj = 25C If = 6.0A, Tj = 25C If = 3.0A, Tj = 125C If = 6.0A, Tj = 125C Vr = 60V Tj = 25C Tj = 125C
Vrrm Irm Ct
Max. Working Peak Reverse Voltage Max. Reverse Leakage Current Max. Junction Capacitance
Vr = 5Vdc ( 100kHz to 1 MHz) 25C
2
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IRF7342D2PBF
Power Mosfet Characteristics
100
VGS TOP -15V -10V -6.0V -5.0V -4.5V -3.5V -3.0V BOTTOM -2.5V
100
VGS -15V -10V - 6.0V -5.5V -4.5V -3.5V -3.0V BOTTOM - 2.5V TOP
-ID, Drain-to-Source Current (A)
10
-ID, Drain-to-Source Current (A)
10
1
1
-2.5V 20s PULSE WIDTH Tj = 150C
0.1 0.1 1 10 100
-2.5V
0.1 0.1 1
20s PULSE WIDTH Tj = 25C
10 100
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
TJ = 25 C
10
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = -3.4 A
-I D , Drain-to-Source Current (A)
1.5
TJ = 150 C
1.0
1
0.5
0.1 2.0
V DS = -25V 20s PULSE WIDTH 3.0 4.0 5.0 6.0 7.0
0.0 -60 -40 -20
VGS = -10V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
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Fig 4. Normalized On-Resistance Vs. Temperature
3
IRF7342D2PBF
Power Mosfet Characteristics
1000
800
-VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = -3.1A
16
VDS =-48V VDS =-30V VDS =-12V
C, Capacitance (pF)
600
Ciss
12
400
8
200
Coss Crss
1 10 100
4
0
0
- -VDS , Drain-to-Source Voltage (V)
0
10
20
30
40
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
10us
10
-ID , Drain Current (A) I
10
100us
TJ = 150 C TJ = 25 C
1
1ms
1
10ms
0.1 0.2
V GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4
0.1
TC = 25 C TJ = 150 C Single Pulse
1 10 100
-VSD ,Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7342D2PBF
Power Mosfet Characteristics
3.5
V DS
3.0
RD
V GS RG V GS
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
-ID , Drain Current (A)
2.0 1.5 1.0 0.5
VGS
Fig 10a. Switching Time Test Circuit
td(on) tr t d(off) tf
0.0
25
50
75
100
125
150
10%
TC , Case Temperature ( C)
90% VDS
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100
0.1 0.0001
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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-
2.5
V DD
5
IRF7342D2PBF
Power Mosfet Characteristics
RDS ( on ) , Drain-to-Source On Resistance ) (
( , RDS(on) Drain-to -Source On Resistance)
0.25
0.35 0.30 0.25 0.20 0.15 VGS = -10V 0.10 0.05 0.0 4.0 8.0 12.0 16.0 -ID , Drain Current ( A ) VGS = -4.5V
0.20
0.15
ID = -3.4A
0.10
0.05 3.0 5.0 7.0 9.0 11.0 13.0 15.0
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs. Gate Voltage
Fig 13. Typical On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
50K
QG QGS VG QGD
12V
.2F .3F
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
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+
D.U.T.
-
VDS
IRF7342D2PBF
Power Mosfet Characteristics
2.0
100
1.8
ID = -250A
80
-VGS(th) ( V )
1.6
Power (W)
60
1.4
40
1.2
20
1.0 -75 -50 -25 0 25 50 75 100 125 150
0 0.001 0.010 0.100 1.000 10.000 100.000
TJ , Temperature ( C )
Time (sec)
Fig 15. Typical Vgs(th) Vs. Junction Temperature
Fig 16. Typical Power Vs. Time
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IRF7342D2PBF
Schottky Diode Characteristics
100
100 T J= 150C Reverse Current - I R (mA) 10 125C 100C 75C 0.1 50C
1
Instantaneous Forward Current - I F (A)
0.01
25C
T J= 150C T J= 125C 10 T J= 25C
0.001
0
10
20
30
40
50
60
Reverse Voltage - V R (V)
Fig. 18 - Typical Values of Reverse Current Vs. Reverse Voltage
1000 Junction Capacitance - C T (pF)
T J= 25C
100
1
0
0.4
0.8
1.2
1.6
2
2.4
2.8
Forward Voltage Drop - V FM (V)
Fig. 17 - Maximum Forward Voltage Drop Characteristics
10
0
10
20
30
40
50
60
Reverse Voltage - V R(V)
Fig. 19 - Typical Junction Capacitance Vs. Reverse Voltage
8
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IRF7342D2PBF
Schottky Diode Characteristics
100
Thermal Response(Z thJA )
D = 0.50 0.20 0.10 0.05 0.02 1 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D =t 1 / t 2 2. Peak T = P DM x ZthJA + TA J 1 10 100
10
t1 , Rectangular Pulse Duration (sec)
Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
180
Allowable Ambient Temprature - (C)
160 140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 RthJA = 62.5 C/W
DC
see note (4) Square wave ( D = 0.50)
80 % Rated V applied R
Average Forward Current - F(AV) (A) I
Fig.21 - Maximum Allowable Ambient Temp. Vs. Forward Current
Note (4) Formula used: TC = TJ - (Pd + PdREV) x RthJA ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) ; PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR
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IRF7342D2PBF
SO-8 (Fetky) Package Outline
D A 5 B
DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00
A1 .0040
6 E
8
7
6
5 H 0.25 [.010] A
c D E e e1 H
1
2
3
4
.050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8
1.27 BAS IC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8
6X
e
K L y
e1
A
K x 45 C 0.10 [.004] y 8X c
8X b 0.25 [.010]
A1 CAB
8X L 7
NOTES : 1. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994. 2. CONTROLLING DIMENS ION: MILLIMETER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONF ORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT TO E XCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT TO E XCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGTH OF LEAD F OR S OLDERING TO A S UBS TRATE. 3X 1.27 [.050] 6.46 [.255]
FOOTPRINT 8X 0.72 [.028]
8X 1.78 [.070]
SO-8 (Fetky) Part Marking Information
EXAMPLE: T HIS IS AN IRF7807D1 (FET KY) DAT E CODE (YWW) P = DIS GNATES LEAD - FREE PRODUCT (OPTIONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER
INTERNAT IONAL RECT IFIER LOGO
XXXX 807D1
10
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IRF7342D2PBF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04
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