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| MCC Features omponents 21201 Itasca Street Chatsworth !"# $ % !"# FS1A THRU FS1M 1 Amp Fast Recovery Silicon Rectifier 50 to 1000 Volts DO-214AC (SMAJ) (High Profile) H Cathode Band * * * * * For Surface Mount Applications Extremely Low Thermal Resistance Easy Pick And Place High Temp Soldering: 250C for 10 Seconds At Terminals Superfast Recovery Times For High Efficiency Maximum Ratings * * * Operating Temperature: -50C to +150C Storage Temperature: -50C to +150C Maximum Thermal Resistance; 15 C/W Junction To Lead MCC Device Maximum Maximum Maximum Catalog Marking Recurrent RMS DC Number Peak Reverse Voltage Blocking Voltage Voltage FS1A FS1A 50V 35V 50V FS1B FS1B 100V 70V 100V FS1D FS1D 200V 140V 200V FS1G FS1G 400V 280V 400V FS1J FS1J 600V 420V 600V FS1K FS1K 800V 560V 800V FS1M FS1M 1000V 700V 1000V J A E F G C D B Electrical Characteristics @ 25C Unless Otherwise Specified Average Forward IF(AV) 1.0A TJ = 90C current Peak Forward Surge IFSM 30A 8.3ms, half sine Current IFM = 1.0A; Maximum 1.30V Instantaneous VF TJ = 25C* Forward Voltage Maximum DC Reverse Current At IR 5A TJ = 25C Rated DC Blocking 200A TJ = 125C Voltage Maximum Reverse Recovery Time 150ns FS1A-G IF=0.5A, IR=1.0A, Trr 250ns Irr=0.25A FS1J 500ns FS1K-M Typical Junction CJ 50pF Measured at Capacitance 1.0MHz, VR=4.0V *Pulse test: Pulse width 200 sec, Duty cycle 2% DIM A B C D E F G H J INCHES MIN .078 .067 .002 --.035 .065 .205 .160 .100 MAX .116 .089 .008 .02 .055 .096 .224 .180 .112 DIMENSIONS MM MIN 1.98 1.70 .05 --.89 1.65 5.21 4.06 2.57 MAX 2.95 2.25 .20 .51 1.40 2.45 5.69 4.57 2.84 NOTE SUGGESTED SOLDER PAD LAYOUT 0.090" 0.085" 0.070" www.mccsemi.com FS1A thru FS1M Figure 1 Typical Forward Characteristics 20 10 6 4 2 25C Amps 1 .6 .4 .2 .1 .06 .04 .02 .01 .6 .8 10 Volts Instantaneous Forward Current - Amperesversus Instantaneous Forward Voltage - Volts 1.2 1.4 1.6 Amps 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 .8 .6 .4 Figure 2 Forward Derating Curve MCC Single Phase, Half Wave .2 60Hz Resistive or Inductive Load 0 0 25 50 75 C Average Forward Rectified Current - Amperes versus Ambient Temperature - C 100 125 150 Figure 3 Junction Capacitance 100 60 40 20 pF TJ=25C 10 6 4 2 1 .1 .2 .4 1 Volts 2 4 10 20 40 100 200 400 1000 Junction Capacitance - pFversus Reverse Voltage - Volts www.mccsemi.com FS1A thru FS1M Figure 4 Peak Forward Surge Current 36 30 24 18 Amps 12 6 0 1 4 6 8 10 Cycles Peak Forward Surge Current - Amperesversus Number Of Cycles At 60Hz - Cycles 20 40 60 80 100 MCC Figure 5 New SMA Assembly Round Lead Process 2 Figure 6 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 10 trr +0.5A 0 25Vdc Pulse Generator Note 2 1 Oscilloscope Note 1 -0.25 -1.0 1cm Set Time Base for 20/100ns/cm Notes: 1. Rise Time = 7ns max. Input impedance = 1 megohm, 22pF 2. Rise Time = 10ns max. Source impedance = 50 ohms 3. Resistors are non-inductive www.mccsemi.com |
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