 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FFB2907A / FMBT2907A / MMPQ2907A Discrete POWER & Signal Technologies FFB2907A E2 B2 C1 FMB2907A C2 E1 C1 MMPQ2907A E2 B2 E3 B3 E4 B4 E1 C2 B1 pin #1 B1 B2 E2 pin #1 B1 E1 SC70-6 Mark: .2F SuperSOTTM-6 Mark: .2F SOIC-16 C1 C2 C1 C3 C2 C4 C4 C3 PNP Multi-Chip General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage TA = 25C unless otherwise noted Parameter Value 60 60 5.0 600 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die FFB2907A 300 2.4 415 Max FMB2907A 700 5.6 180 MMPQ2907A 1,000 8.0 125 240 Units mW mW/C C/W C/W C/W (c) 1998 Fairchild Semiconductor Corporation FFB2907A / FMBT2907A / MMPQ2907A PNP Multi-Chip General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IB ICEX ICBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current Collector Cutoff Current IC = 10 mA, IB = 0 IC = 10 A, IE = 0 IE = 10 A, IC = 0 VCB = 30 V, VEB = 0.5 V VCE = 30 V, VBE = 0.5 V VCB = 50 V, IE = 0 VCB = 50 V, IE = 0, TA = 125C 60 60 5.0 50 50 0.02 20 V V V nA nA A A ON CHARACTERISTICS hFE DC Current Gain IC = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V* IC = 500 mA, VCE = 10 V* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA* IC = 500 mA, IB = 50 mA 75 100 100 100 50 300 0.4 1.6 1.3 2.6 V V V V VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage* Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS fT Cobo Cibo Current Gain - Bandwidth Product Output Capacitance Input Capacitance IC = 50 mA, VCE = 20 V, f = 100 MHz VCB = 10 V, IE = 0, f = 100 kHz VEB = 2.0 V, IC = 0, f = 100 kHz 250 6.0 12 MHz pF pF SWITCHING CHARACTERISTICS ton td tr toff ts tf Turn-on Time Delay Time Rise Time Turn-off Time Storage Time Fall Time VCC = 6.0 V, IC = 150 mA IB1 = IB2 = 15 mA VCC = 30 V, IC = 150 mA, IB1 = 15 mA 30 8.0 20 80 60 20 ns ns ns ns ns ns *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% FFB2907A / FMBT2907A / MMPQ2907A PNP Multi-Chip General Purpose Amplifier (continued) Typical Characteristics V CESAT - COLLECTOR EMITTER VOLTAGE (V) hFE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 500 VCE = 5V Collector-Emitter Saturation Voltage vs Collector Current 0.5 = 10 0.4 0.3 25 C 400 300 200 100 0 0.1 125 C 25 C 0.2 0.1 0 125 C - 40 C - 40 C 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 1 10 100 I C - COLLECTOR CURRENT (mA) 500 VBEON - BASE EMITTER ON VOLTAGE (V) V BESAT - BASE EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1 0.8 0.6 125 C - 40 C 25 C Base Emitter ON Voltage vs Collector Current 1 0.8 - 40 C 0.6 0.4 0.2 0 0.1 25 C 125 C 0.4 = 10 0.2 0 VCE = 5V 1 10 100 I C - COLLECTOR CURRENT (mA) 500 1 10 I C - COLLECTOR CURRENT (mA) 25 Collector-Cutoff Current vs. Ambient Temperature ICBO- COLLECTOR CURRENT (nA) 100 V CB = 35V 10 CAPACITANCE (pF) 16 12 20 Input and Output Capacitance vs Reverse Bias Voltage 1 C ib 8 4 0 0.1 C ob 0.1 0.01 25 50 75 100 TA - AMBIENT TEMPERATURE ( C) 125 1 10 REVERSE BIAS VOLTAGE (V) 50 FFB2907A / FMBT2907A / MMPQ2907A PNP Multi-Chip General Purpose Amplifier (continued) Typical Characteristics (continued) Switching Times vs Collector Current 250 I B1 = I B2 = 200 V cc = 15 V Ic 10 Turn On and Turn Off Times vs Collector Current 500 I B1 = I B2 = 400 V cc = 15 V Ic 10 TIME (nS) 150 100 tr tf ts TIME (nS) 300 200 100 t off t on 50 td 0 10 100 I C - COLLECTOR CURRENT (mA) 1000 0 10 100 I C - COLLECTOR CURRENT (mA) 1000 I B1 - TURN 0N BASE CURRENT (mA) Rise Time vs Collector and Turn On Base Currents 50 PD - POWER DISSIPATION (W) 1 Power Dissipation vs Ambient Temperature 20 10 5 30 ns 0.75 SOT-6 t r = 15 V 0.5 2 60 ns 0.25 1 10 100 I C - COLLECTOR CURRENT (mA) 500 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 FFB2907A / FMBT2907A / MMPQ2907A PNP Multi-Chip General Purpose Amplifier (continued) Test Circuits 30 V 200 1.0 K 0 - 16 V 50 200ns FIGURE 1: Saturated Turn-On Switching Time Test Circuit 15 V - 6.0 V 1 K 37 1.0 K 0 - 30 V 200ns 50 FIGURE 2: Saturated Turn-Off Switching Time Test Circuit |
Price & Availability of MMPQ2907A
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |