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 GT40Q322
TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT
Preliminary
GT40Q322
Unit: mm
Voltage Resonance Inverter Switching Application
* * * * * Enhancement-mode High speed : tf = 0.14 s (typ.) (IC = 40A) FRD included between emitter and collector The 4th generation TO-3P(N) (Toshiba package name)
Maximum Ratings (Ta = 25C)
Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Diode forward current Collector power dissipation Junction temperature Storage temperature range DC Pulsed @ Tc = 100C @ Tc = 25C @ Tc = 100C @ Tc = 25C Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 1200 25 20 39 80 10 80 80 200 150 -55 to 150 Unit V V A A A W W C C
JEDEC JEITA TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
Thermal Characteristics
Characteristics Thermal resistance (IGBT) Thermal resistance (diode) Symbol Rth (j-c) Rth (j-c) Max 0.625 1.79 Unit C/W C/W
Equivalent Circuit
Collector
Gate Emitter
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2003-07-07
GT40Q322
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Diode forward voltage Reverse recovery time Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF trr IF = 10 A, VGE = 0 IF = 10 A, di/dt = -20 A/s Test Condition VGE = 25 V, VCE = 0 VCE = 1200 V, VGE = 0 IC = 40 mA, VCE = 5 V IC = 40 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Resistive Load VCC = 600 V, IC = 40 A VGG = 15 V, RG = 39 (Note 1) Min 4.0 Typ. 3.0 5550 0.18 0.26 0.14 0.43 0.6 Max 500 5.0 7.0 3.7 0.21 2.0 V s s Unit nA mA V V pF
Note 1: Switching time measurement circuit and input/output waveforms
VGE 0 RG 0 VCC 0 VCE td (off) RL IC 90%
90% 10%
90% 10% tf toff 10% tr ton
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GT40Q322
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
030519EAA
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
3
2003-07-07


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