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Silan Semiconductors
LI-ION BATTERY PROTECTOR
DESCRIPTION
The SC451XX series are protection ICs for over-charge /discharge of rechargeable one-cell Lithium-ion (Li+) batteries by CMOS process. The SC451XX series can detect over-charge/discharge of Li+ one-cell and excess load current, further include a short circuit protector for preventing large external short circuit current.
SC451XX
SOT-26
FEATURES
* Low supply current. * High withstand voltage. * High accuracy detector threshold. * Variety of detector threshold. * Built-in protection circuit. * Output delay of over-charge. * Ultra small package: SOT-26
APPLICATIONS
* Over-charge/over-discharge protection for Li+ one-cell pack * High precision protectors for cell-phones and any other gadgets using on board Li+ one-cell battery.
PIN ASSIGNMENT
BLOCK DIAGRAM
5 VDD 2 Ct
6
5
4
VD1
Level shift
SC451XX
delay VD2
1 2 3
short circuit detector
VD3 3 VSS DOUT 4 1 COUT 6 V-
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0 2000.12.31
1
Silan Semiconductors
ABSOLUTE MAXIMUM RATING
Characteristic
Supply Voltage Input Voltage Output Voltage Power Dissipation Storage Temperature Operating Temperature
SC451XX
Symbol
VDD VVCT VCOUT VDOUT PD TSTG TOPR
Value
0.3 ~ 12 VDD-18~VDD+0.3 Vss-0.3 ~ VDD+0.3 VDD-18~VDD+0.3 Vss-0.3 ~ VDD+0.3 150 -55 ~ +125 -40 ~ + 85
Unit
V V V V V mW C C
ELECTRICAL CHARACTERISTICS (Tamb=25C, unless otherwise specified)
SC451XX-01
Parameter
Operating Voltage Min Operating Voltage for 0V Charging Over-charge Threshold Voltage Over-charge Threshold Hysteresis Range Output Delay Time of Over-charge Over-discharge Threshold Voltage Output Delay Time of Over-Discharge Excess Current Threshold Voltage Output Delay Time of Excess Current Short Detection Voltage Output Delay Time of Short Detection Reset Resistance for Excess Current Protection Nch ON Voltage of COUT Pch ON Voltage of COUT Nch ON Voltage of DOUT Pch ON voltage of DOUT Supply Current Standby Current
Symbol
VDD1 Vst VDET1 VHYS1 TVDET1 VDET2
Conditions
Voltage defined as VDD-VSS Voltage defined as VDD-V-, VDD-VSS=0V Detect rising edge of supply voltage
Min
1.5
Typ
Max
10 1.2
Unit
V V V V ms V ms V ms V s k V V V V A A
4.20 0.15
4.25 0.2 75 2.500 10 0.20 13 5
4.30 0.25 100 2.563 13 0.23 17 50 150 0.5 0.5 6.0 0.6
C3=0.01F,VDD=3.6V4.3V Detect falling edge of supply voltage Detect rising edge of "V-" pin voltage VDD=3.0V VDD=3.0V VDD=3.0V VDD=3.6V, V- =1.0 IOL=50A,VDD=4.4V IOH= -50A,VDD=3.9V IOL=50A,VDD=2.4V IOH= -50A,VDD=3.9V VDD=3.9V,V- =0V
50 2.437 7 0.17 9
TVDET2 VDD=3.6V2.4V VDET3 TVDET3 Vshort Tshort Rshort VOL1 VOH1 VOL2 VOH2 IDD
VDD-1.1 VDD-0.8 VDD-0.5
50
100 0.2
3.4 3.4
3.8 0.2 3.7 3.0 0.3
Istandby VDD=2.0V
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0 2000.12.31
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Silan Semiconductors
SC451XX-02
SC451XX
Symbol
VDD1 Vst
Parameter
Operating Voltage Min Operating Voltage for 0V Charging Over-charge Threshold Voltage Over-charge Threshold Hysteresis Range Output Delay Time of Over-charge Over-discharge Threshold Voltage Output Delay Time of Over-discharge Excess Current Threshold Voltage Output Delay Time of Excess Current Short Detection Voltage Output Delay Time of Short Detection Reset Resistance for Excess Current Protection Nch ON Voltage of COUT Pch ON Voltage of COUT Nch ON Voltage of DOUT Pch ON Voltage of DOUT Supply Current Standby Current
Conditions
Voltage defined as VDD-VSS Voltage defined as VDD-V-, VDD-VSS=0V Detect rising edge of supply voltage
Min
1.5
Typ
Max
10 1.2
Unit
V V
VDET1
4.30
4.35
4.40
V
VHYS1 TVDET1 VDET2 TVDET2 VDET3 TVDET3 Vshort Tshort Rshort VOL1 VOH1 VOL2 VOH2 IDD C3=0.01F,VDD=3.6V4.3V Detect falling edge of supply voltage VDD=3.6V2.4V Detect rising edge of "V-" pin voltage VDD=3.0V VDD=3.0V VDD=3.0V VDD=3.6V, V- =1.0 IOL=50A, VDD=4.4V IOH= -50A, VDD=3.9V IOL=50A, VDD=2.4V IOH= -50A, VDD=3.9V VDD=3.9V, V- =0V
0.15 55 2.437 7 0.17 9
0.2 80 2.500 10 0.20 13
0.25 105 2.563 13 0.23 17
V ms V ms V ms V s k V V
VDD-1.1 VDD-0.8 VDD-0.5 5 50 100 0.2 3.4 3.8 0.2 3.4 3.7 3.0 0.3 6.0 0.6 0.5 50 150 0.5
V V A A
Istandby VDD=2.0V
PIN DESCRIPTION
PIN No.
1 2 3 4 5 6
Symbol
COUT CT VSS DOUT VDD V-
Description
Output of over-charge detection, CMOS output Pin for external capacitor setting output delay of VD1 Ground Output of over-discharge detection, CMOS output Power supply Pin for charger negative input
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0 2000.12.31
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Silan Semiconductors
FUNCTIONAL DESCRIPTION
* VD1/OVER-CHARGE DETECTOR
SC451XX
The VD1 monitors VDD pin voltage. When the VDD voltage crosses over-charge detector threshold VDET1 from a low value to a value higher than the VDET1, the VD1 can sense over-charging and an external charge control Nch-MOS-FET turns to "off" with COUT pin being at "L". An output delay time for over-charges detection can be set by an external capacitor C3 connecting the VSS pin and Ct pin. The external capacitor can make a delay time form a moment detecting over-charge to a time output a signal which enables charge control Nch-MOS-FET for turning to "off". Though the VDD voltage would be going up to a higher level than VDET1 if it is within a time period of the output delay time, VD1 would not output a signal for turning "off" of charge control Nch-MOS-FET. The output delay time can be calculated as below:
C3 x (VDD - 0.7) 0.48 x 10 - 6
tVDET1 =
A level shifter incorporated in a buffer driver for the COUT pin makes the "L" of COUT pin to the V-pin voltage and the "H" of COUT pin is set to VDD voltage with CMOS buffer.
* RESET CONDITIONS FROM OVERCHARGING OF SC451XX-01 There can be two cases to reset the VD1 making the COUT pin level to "H" again after detecting over-charge. Resetting the VD1 makes the charging system ready for resumption of charging process. The first case is in such condition that a time when the VDD voltage is coming down to a level lower than "VDET1-VHYS1". While in the second case, disconnecting a charger from the battery pack can make the VD1 resetting when the VDD level is within hysteresis width (VDET1-VHYS1VDDVDET1). After detecting over-charge with the VDD voltage of higher than VDET1, connecting system load to the battery pack makes load current allowable through parasitic diode of external charge control Nch-MOS-FET. The COUT level would be "H" when the VDD level is coming down to a level below the VDET1 by continuous drawing of load current.
* RESET CONDITIONS FROM OVERCHARGING OF SC451XX-02 After detecting over-charge, the VD1 would not be release and COUT level would not switch to "H" again with the exception that a cell voltage reaches to a lower value than "VDET1-VHYS1" by self discharge of cell or else. After detecting over-charge, when the VDD level stays at a value higher than "VDET1-VHYS1", to connect battery pack to a system load makes battery pack being disable at for charging or discharging because of excess current detector operated being DOUT "L".
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0 2000.12.31
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Silan Semiconductors
SC451XX
* VD2/OVER-DISCHARGE DETECTOR The VD2 monitors a VDD pin voltage. When the VDD voltage crosses the over-discharge detector threshold VDET2 from a high value to a value lower than the VDET2, the VD2 can sense an over-discharging and the external discharge control Nch-MOS-FET turns to "off" with the DOUT pin being at "L". Resetting the VD2 with the DOUT pin level being "H" again after detecting over-discharge is only possible by connecting a charger to the battery pack. When the VDD voltage stays under over-discharge detector threshold VDET2 charge current can flow through parasitic diode of external discharge control Nch-MOS-FET, then after the VDD voltage comes up to a value larger than VDET2 discharging process would be advanced through "on" state discharge control Nch-MOS-FET. Connecting a charger to the battery pack makes the DOUT level being "H" instantaneously when the VDD voltage is higher than VDET2. When a cell voltage equals to zero, connecting charger to the battery pack makes the system allowable for charge with higher charge voltage than Vst, 1.2V Max. An output delay time of the over-discharge detection is fixed internally. Though the VDD voltage would be going down to a lower level than VDET2 if it is within a time period of the output delay time, VD2 would not output a signal for turning "off" of discharge control Nch-MOS-FET. After detection of an over-discharge by VD2, supply current would be reduced to 0.3ATYP. at VDD=2.0V and into standby, only the charger detector is operating. The output type of DOUT pin is CMOS having "H" level of VDD and "L" level of VSS. * VD3/EXCESS CURRENT DETECTOR, SHORT CIRCUIT PROTECTOR *Both of the excess current detector and short circuit protector can work when both control Nch-MOS-FETs are in "on" state. When the V-pin voltage is going up to a value between the short protection voltage Vshort and excess current threshold VDET3, the excess current detector operates and further soaring of V-pin voltage higher than Vshort makes the short circuit protector enabled. As a result the external discharge control Nch-MOS-FET turns to "off" with the DOUT pin being at "L". *An output delay time for the excess current detector is internally fixed, 13ms TYP. at VDD=3.0V. A quick recovery of V-pin level from a value between Vshort and VDET3 within the delay time keeps the discharge control FET staying "ON" state. When the short circuit protector is enabled, the DOUT would be "L" and its delay time would be 5s TYP. *The V-pin has a built-in pull down resistor, TYP.100K, connected to the VSS pin. After an excess current or short circuit protection is detected, removing a cause of excess current or external short circuit makes an external discharge control Nch-MOS-FET to an "on" state automatically with the V-pin level being down to the VSS level through the built-in pull down resistor. * When VDD voltage is higher than VDET2 at a time when the excess current is detected the SC451XX does not enter a standby mode, while VDD voltage is lower than VDET2 the SC451XX enters a standby mode. After detecting short circuit the SC451XX will not enter a standby mode.
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0 2000.12.31
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Silan Semiconductors
TIMING DIAGRAM
Charging discharging Charging discharging Charging discharging
SC451XX
Charging excess short current current open open
VDET1 VDET1 -VHYS1
VDD
VDET2
t
VDD Vshort
VVDET3 VSS
t
tVDET1
VDD
tVDET1
COUT
V-
t
tVDET2
VDD
tVDET2
tVDET3 tshort
DOUT
VSS
t
charging current
Charging/ discharging 0 current
t
discharging current
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0 2000.12.31
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Silan Semiconductors
TEST CIRCUITS
SC451XX
VDD VVSS
5 2 6 1 3
VDD Ct V-
5 6 3 4
DOUT
v
v
COUT
VSS
VDD V-
5 6 3 4
DOUT
VDD V-
5 6 3 1
COUT
50A
vA
VSS
VSS
v
VDD V-
5 6 3 1
COUT
50A
VDD V-
5 6 3
4
DOUT
50A
v
VSS
v
VSS
(To be continued)
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0 2000.12.31
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Silan Semiconductors
(Continued)
50A
SC451XX
DOUT VDD
VDD V-
5 6 3
4
5 6 3
v
v
VVSS
VSS
R1 C1
VDD
5 2 6 1 3
C3 Ct COUT R2
5 6 v
C2
V-
v
VSS
4 3
DOUT
TYPICAL APPLICATION CIRCUITS
+
R1 100 C1 0.1 C3 0.01
VDD 5 V2 Ct VSS 3 4 DOUT
C2 0.1
SC451XX
6
1 COUT
R2 1K
-
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0 2000.12.31
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Silan Semiconductors
TYPICAL PERFORMANCE CHARACTERISTICS
Over-discharge threshold VDET2(V)
4.27 2.54 2.53 2.52 2.51 2.50 2.49 2.48
SC451XX
Over-charge threshold VDET1(V)
4.26 4.25 4.24 4.23 4.22 4.21 4.20 -60 -40 -20 0 20 40 60 80 100
2.47 -60 -40 -20 0
20 40 60 80 100
Temperature Topt(k) Short circuit protector threshold Vshort(V)
0.210 2.40 2.35 2.30 2.25 2.20 2.15
Temperature Topt(k)
Excess current threshold VDET3(V)
0.205
0.200
0.195 0.190 -60 -40 -20 0
20 40 60 80 100
2.10 -60 -40 -20 0
20 40 60 80 100
Temperature Topt(k) Output delay of over-charge tVDET1(ms) Output delay of over-discharge tVDET2(ms)
100 90 80 70 60 50 40 30 20 -60 -40 -20 0 20 40 60 80 100 18 16 14 12 10 8 6 4 2
Temperature Topt(k)
-60 -40 -20 0
20 40 60 80 100
Temperature Topt(k)
Temperature Topt(k)
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0 2000.12.31
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
VDD=3.0V
18 16 14 12 10 8 6 4 2 -60 -40 -20 0 20 40 60 80 100
SC451XX
VDD=3.0V Output delay of short circuit protector tshort(S)
10 8
Output delay of excess current tVDET3(ms)
20
6 4 2 0 -60 -40 -20
0
20 40 60 80 100
Temperature Topt(k)
0.210
Temperature Topt(k) VDD=3.9V V-=0V
4.0
Over-charge treshold hysteresis VHYS1(V)
Supply current IDD(A)
0 20 40 60 80 100
3.5 3.0 2.5 2.0 1.5 1.0 0.5
0.205
0.200
0.195
0.190 -60 -40 -20
0.0 -60 -40 -20
0
20 40 60 80 100
Temperature Topt(k) VDD=2.0V Standby current Istandby(A)
0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 -60 -40 -20 0 20 40 60 80 100
Temperature Topt(k)
Temperature Topt(k)
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0 2000.12.31
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Silan Semiconductors
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
COUT Nch Driver ON Voltage VOL1(V) COUT Pch Driver ON Voltage VOH2(V) IOL=50A VDD=4.4V
0.30 0.25 0.20 0.15 0.10 0.05 0.00 -60 -40 -20 0 20 40 60 80 100
SC451XX
IOH= -50A VDD=3.9V
3.90 3.85 3.80 3.75 3.70 3.65 3.60 -60 -40 -20 0 20 40 60 80 100
Temperature Topt(k)
Temperature Topt(k
DOUT Pch Driver ON Voltage VOH2(V)
DOUT Nch Driver ON Voltage VOL2(V)
IOL=50eA VDD=2.4V
0.30 0.25 0.20 0.15 0.10 0.05 0.00 -60 -40 -20 0 20 40 60 80 100
IOH= -50A VDD=3.9V
3.90 3.85 3.80 3.75 3.70 3.65 3.60 -60 -40 -20 0 20 40 60 80 100
Temperature Topt(k)
Temperature Topt(k
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0 2000.12.31
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Output delay of over-charge tVDET1(ms) 800 700 600 500 400 300 200 100 0 0 Output delay of excess current tVDET3(ms) 0.05 External capacitance C3(F) 25.00 Output delay of excess current tVDET3(ms) 0.210 0.209 0.208 0.207 0.206 0.205 0.204 0.203 0.202 0 0.5 1.0 1.5 0.1 VDD=3.6V~4.3V Output delay of short protection tshort(s) 10000
SC451XX
RI=1K, VDD=3.0V
1000
100
10
1 0.001 0.01 0.1 1 External capacitance C2(F)
20.00 15.00 10.00
5.00 0.00 2.5
3.0
3.5
4.0
4.5
2.0
2.5
3.0
Supply voltage VDD(V) 4.258 Over-charge threshold VDET1(V) 4.256 C3=0.1F 4.254 4.252 C3=0.01F 4.250 4.248 4.246 0 C1=0 ~ 6.8F C3=0.22F
External resistance R2(K)
200
400
600
800
1000
External resistance R1()
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0 2000.12.31
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Silan Semiconductors
PACKAGE OUTLINE
SC451XX
UNIT: mm
2.90.2 0 ~ 15 o
SOT-26
MIN 0.2
2.80.2
1.60.2
0 ~ 0.1
0.40 0.95 1.90.2 0.95 0.15
1.0 ~ 1.3
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0 2000.12.31
1.10.2
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