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FDC3512
February 2002
FDC3512
80V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
* 3.0 A, 80 V RDS(ON) = 77 m @ VGS = 10 V RDS(ON) = 88 m @ VGS = 6 V
Applications
* DC/DC converter
* High performance trench technology for extremely low RDS(ON) * Low gate charge (13nC typ) * High power and current handling capability * Fast switching speed
D
D
S
1 2
G
6 5 4
SuperSOT TM -6
D
D
3
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
80 20
(Note 1a)
Units
V V A W C
3.0 20 1.6 0.8 -55 to +150
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 30
C/W C/W
Package Marking and Ordering Information
Device Marking .352 Device FDC3512 Reel Size 7'' Tape width 8mm Quantity 3000 units
2002 Fairchild Semiconductor Corporation
FDC3512 Rev B2 (W)
FDC3512
Electrical Characteristics
Symbol
W DSS IAR BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on) ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr
TA = 25C unless otherwise noted
Parameter
Drain-Source Avalanche Energy Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
Test Conditions
Single Pulse, VDD = 40 V, ID=3.0 A
Min
Typ
Max Units
90 3.0 mJ A V
Drain-Source Avalanche Ratings (Note 2)
Off Characteristics
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 64 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, VGS = 6.0 V, VGS = 10 V, VGS = 10 V, ID = 3.0 A ID = 2.8 A ID = 3.0 A;TJ = 125C VDS = 5 V 2 2.4 -6 56 61 97 10 14 634 58 28 7 3 24 4 VDS = 40 V, VGS = 10 V ID = 3.0 A, 13 2.4 2.8 1.3
(Note 2)
80 80 1 100 -100 4
mV/C A nA nA V mV/C 77 88 141 m A S pF pF pF 14 6 28 8 18 ns ns ns ns nC nC nC A V nS nC
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 10 V, ID = 3.0 A
Dynamic Characteristics
VDS = 40 V, f = 1.0 MHz V GS = 0 V,
Switching Characteristics
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 40 V, VGS = 10 V,
ID = 1 A, RGEN = 6
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A Voltage IF = 3.0 A, Diode Reverse Recovery Time diF/dt = 300 A/s Diode Reverse Recovery Charge 0.8 28.2 48 1.2
(Note 2)
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
2 78C/W when mounted on a 1in pad of 2oz copper on FR-4 board.
a. b.
156C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
FDC3512 Rev B2(W)
FDC3512
Typical Characteristics
20
1.8 6.0V 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 5.0V
ID, DRAIN CURRENT (A)
1.6
15
VGS = 4.0V
1.4 4.5V 1.2 5.0V 6.0V 1 10V
10
4.0V
5
0 0 1 2 3 4 5 VDS, DRAIN-SOURCE VOLTAGE (V)
0.8 0 5 10 ID, DRAIN CURRENT (A) 15 20
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.18 RDS(ON), ON-RESISTANCE (OHM)
2.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 1.9 1.6 1.3 1 0.7 0.4 -50 -25 0 25 50 75 100
o
ID = 3.0A VGS =10V
ID = 1.5 A 0.14 TA = 125oC 0.1
0.06
TA = 25oC
125
150
175
0.02 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
20 IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 15
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 VGS = 0V 10 TA = 125oC 1 25oC 0.1 0.01 0.001 0.0001 -55oC
10 TA = 125 C 5 25oC 0 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) -55oC
o
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDC3512 Rev B2(W)
FDC3512
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 3.0A 8 60V 6 CAPACITANCE (pF) VDS = 20V 40V
1000 f = 1MHz VGS = 0 V 800 CISS 600
4
400
2
200 CRSS
COSS
0 0 3 6 9 12 15 Qg, GATE CHARGE (nC)
0 0 20 40 60 80 -VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 RDS(ON) LIMIT 10 10ms 100ms 1s 10s VGS = 10V SINGLE PULSE o RJA = 156 C/W TA = 25 C 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V)
o
Figure 8. Capacitance Characteristics.
50
ID, DRAIN CURRENT (A)
100s 1ms
P(pk), PEAK TRANSIENT POWER (W)
40
SINGLE PULSE RJA = 156C/W TA = 25C
30
1 DC
20
0.1
10
0 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
0.1
0.1 0.05 0.02 0.01
RJA(t) = r(t) + RJA RJA = 156C/W
P(pk)
t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.001 0.0001
0.001
0.01
0.1 t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDC3512 Rev B2(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4

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