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| Composite Transistors XP0121M Silicon NPN epitaxial planar type (0.425) Unit: mm 0.12+0.05 -0.02 For switching/digital circuits Features * Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor) * Reduction of the mounting area and assembly cost by one half 0.200.05 5 4 1.250.10 2.10.1 1 2 3 (0.65) (0.65) 1.30.1 2.00.1 10 Basic Part Number * UNR221M x 2 0.90.1 Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 100 150 150 -55 to +150 Unit V V mA mW C C 1: Base (Tr1) 2: Emitter 3: Base (Tr2) EIAJ: SC-88A 0 to 0.1 0.9+0.2 -0.1 4: Collector (Tr2) 5: Collector (Tr1) SMini5-G1 Package Marking Symbol: EM Internal Connection 5 Tr1 4 Tr2 Electrical Characteristics Ta = 25C 3C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio hFE Ratio * Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Resistance ratio Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE(Small /Large) 1 2 5 3 Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 k VCC = 5 V, VB = 2.5 V, RL = 1 k Min 50 50 Typ Max 0.1 0.5 0.2 80 0.50 0.99 0.25 4.9 0.2 -30% 2.2 0.047 +30% VCE(sat) VOH VOL R1 R1 / R 2 fT VCB = 10 V, IE = -2 mA, f = 200 MHz 150 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between 2 elements 0.20.1 Unit V V A A mA V V V k Publication date: June 2003 SJJ00235BED 1 XP0121M PT Ta 250 IC VCE Collector-emitter saturation voltage VCE(sat) (V) IB = 1.0 mA 0.9 mA 0.8 mA VCE(sat) IC 1 IC / IB = 10 Total power dissipation PT (mW) 120 200 Collector current IC (mA) 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 150 80 0.2 mA 0.1 100 Ta = 75C -25C 25C 40 0.1 mA 50 0 0 40 80 120 160 0 0 2 4 6 8 10 12 0.01 0.1 1 10 100 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Collector current IC (mA) hFE IC 400 Ta = 75C Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob VCE = 10 V 10 f = 1 MHz Ta = 25C IO VIN 103 VO = 5 V Ta = 25C Forward current transfer ratio hFE 25C Output current IO (A) 1 300 102 200 -25C 10 100 0 1 10 100 1 000 1 0 10 20 30 40 0 1 2 Collector current IC (mA) Collector-base voltage VCB (V) Input voltage VIN (V) VIN IO 100 VO = 0.2 V Ta = 25C Input voltage VIN (V) 10 1 0.1 0.1 1 10 100 Output current IO (mA) 2 SJJ00235BED |
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