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| TZQ5221B...TZQ5267B Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features D D D D D Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise 96 12009 Applications Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z-current Junction temperature Storage temperature range Test Conditions RthJA x300K/W Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 -65...+175 Unit mW mA C C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1.5 Unit V Document Number 85612 Rev. 3, 01-Apr-99 www.vishay.de * FaxBack +1-408-970-5600 1 (6) TZQ5221B...TZQ5267B Vishay Telefunken Type TZQ5221B TZQ5222B TZQ5223B TZQ5224B TZQ5225B TZQ5226B TZQ5227B TZQ5228B TZQ5229B TZQ5230B TZQ5231B TZQ5232B TZQ5233B TZQ5234B TZQ5235B TZQ5236B TZQ5237B TZQ5238B TZQ5239B TZQ5240B TZQ5241B TZQ5242B TZQ5243B TZQ5244B TZQ5245B TZQ5246B TZQ5247B TZQ5248B TZQ5249B TZQ5250B TZQ5251B TZQ5252B TZQ5253B TZQ5254B TZQ5255B TZQ5256B TZQ5257B TZQ5258B TZQ5259B TZQ5260B TZQ5261B TZQ5262B TZQ5263B TZQ5264B TZQ5265B TZQ5266B TZQ5267B VZnom 1) V 2.4 2.5 2.7 2.8 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43 47 51 56 60 62 68 75 IZT for rzjT mA W 20 < 30 20 < 30 20 < 30 20 < 30 20 < 29 20 < 28 20 < 24 20 < 23 20 < 22 20 < 19 20 < 17 20 < 11 20 <7 20 <7 20 <5 20 <6 20 <8 20 <8 20 < 10 20 < 17 20 < 22 20 < 30 9.5 < 13 9.0 < 15 8.5 < 16 7.8 < 17 7.4 < 19 7.0 < 21 6.6 < 23 6.2 < 25 5.6 < 29 5.2 < 33 5.0 < 35 4.6 < 41 4.5 < 44 4.2 < 49 3.8 < 58 3.4 < 70 3.2 < 80 3.0 < 93 2.7 < 105 2.5 < 125 2.2 < 150 2.1 < 170 2.0 < 185 1.8 < 230 1.7 < 270 rzjk at IZK mA < 1200 0.25 < 1250 0.25 < 1300 0.25 < 1400 0.25 < 1600 0.25 < 1600 0.25 < 1700 0.25 < 1900 0.25 < 2000 0.25 < 1900 0.25 < 1600 0.25 < 1600 0.25 < 1600 0.25 < 1000 0.25 < 750 0.25 < 500 0.25 < 500 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 700 0.25 < 700 0.25 < 800 0.25 < 900 0.25 < 1000 0.25 < 1100 0.25 < 1300 0.25 < 1400 0.25 < 1400 0.25 < 1600 0.25 < 1700 0.25 IR at VR V 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 3.0 3.5 4.0 5.0 6.0 6.5 6.5 7.0 8.0 8.4 9.1 9.9 10 11 12 13 14 14 15 17 18 19 21 21 23 25 27 30 33 36 39 43 46 47 52 56 TKVZ %/K < -0.085 < -0.085 < -0.080 < -0.080 < -0.075 < -0.070 < -0.065 < -0.060 < 0.055 < 0.030 < 0.030 < +0.038 < +0.038 < +0.045 < +0.050 < +0.058 < +0.062 < +0.065 < +0.068 < +0.075 < +0.076 < +0.077 < +0.079 < +0.082 < +0.082 < +0.083 < +0.084 < +0.085 < +0.086 < +0.086 < +0.087 < +0.088 < +0.089 < +0.090 < +0.091 < +0.091 < +0.092 < +0.093 < +0.094 < +0.095 < +0.095 < +0.096 < +0.096 < +0.097 < +0.097 < +0.097 < +0.098 W mA < 100 < 100 < 75 < 75 < 50 < 25 < 15 < 10 <5 <5 <5 <5 <5 <5 <3 <3 <3 <3 <3 <3 <2 <1 < 0.5 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 1.)Based on dc measurement at thermal equilibrium; case temperature maintained at 30C 2C. www.vishay.de * FaxBack +1-408-970-5600 2 (6) Document Number 85612 Rev. 3, 01-Apr-99 TZQ5221B...TZQ5267B Vishay Telefunken Characteristics (Tj = 25_C unless otherwise specified) TK VZ - Temperature Coefficient of VZ ( 10 -4 /K ) 600 Ptot - Total Power Dissipation ( mW ) 500 400 300 200 100 0 0 95 9602 15 10 5 IZ=5mA 0 -5 0 10 20 30 40 50 VZ - Z-Voltage ( V ) 40 80 120 160 200 Tamb - Ambient Temperature ( C ) 95 9600 Figure 1. Total Power Dissipation vs. Ambient Temperature 1000 C D - Diode Capacitance ( pF ) - Voltage Change ( mV ) Figure 4. Temperature Coefficient of Vz vs. Z-Voltage 200 Tj = 25C 100 150 VR = 2V 100 Tj = 25C IZ=5mA 10 DVZ 50 1 0 95 9598 0 5 10 15 20 25 95 9601 0 5 10 15 20 25 VZ - Z-Voltage ( V ) VZ - Z-Voltage ( V ) Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb=25C 1.3 VZtn - Relative Voltage Change VZtn=VZt/VZ(25C) IF - Forward Current ( mA ) 1.2 TKVZ=10 10-4/K 8 6 10-4/K 10-4/K 10-4/K 10-4/K Figure 5. Diode Capacitance vs. Z-Voltage 100 10 Tj = 25C 1 1.1 4 2 1.0 0.9 0.8 -60 0 -2 10-4/K -4 10-4/K 0.1 0.01 0.001 0 60 120 180 240 95 9605 0 0.2 0.4 0.6 0.8 1.0 95 9599 Tj - Junction Temperature ( C ) VF - Forward Voltage ( V ) Figure 3. Typical Change of Working Voltage vs. Junction Temperature Figure 6. Forward Current vs. Forward Voltage Document Number 85612 Rev. 3, 01-Apr-99 www.vishay.de * FaxBack +1-408-970-5600 3 (6) TZQ5221B...TZQ5267B Vishay Telefunken 100 r Z - Differential Z-Resistance ( W ) 1000 IZ - Z-Current ( mA ) 80 Ptot=500mW Tamb=25C 60 IZ=1mA 100 5mA 10 10mA 40 20 0 0 4 8 12 16 20 1 0 95 9606 Tj = 25C 5 10 15 20 25 95 9604 VZ - Z-Voltage ( V ) VZ - Z-Voltage ( V ) Figure 7. Z-Current vs. Z-Voltage 50 Ptot=500mW Tamb=25C Figure 9. Differential Z-Resistance vs. Z-Voltage IZ - Z-Current ( mA ) 40 30 20 10 0 15 20 25 30 35 95 9607 VZ - Z-Voltage ( V ) Figure 8. Z-Current vs. Z-Voltage Z thp - Thermal Resistance for Pulse Cond. (K/W) 1000 tp/T=0.5 100 tp/T=0.2 Single Pulse 10 tp/T=0.1 tp/T=0.05 1 10-1 tp/T=0.02 iZM=(-VZ+(VZ2+4rzj tp/T=0.01 DT=Tjmax-Tamb RthJA=300K/W DT/Zthp)1/2)/(2rzj) 100 101 tp - Pulse Length ( ms ) 102 95 9603 Figure 10. Thermal Response www.vishay.de * FaxBack +1-408-970-5600 4 (6) Document Number 85612 Rev. 3, 01-Apr-99 TZQ5221B...TZQ5267B Vishay Telefunken Dimensions in mm 96 12071 Document Number 85612 Rev. 3, 01-Apr-99 www.vishay.de * FaxBack +1-408-970-5600 5 (6) TZQ5221B...TZQ5267B Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de * FaxBack +1-408-970-5600 6 (6) Document Number 85612 Rev. 3, 01-Apr-99 |
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