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RMM2080
May 2004
RMM2080
2-18 GHz Wideband Variable-Gain Driver Amplifier
General Description
The Fairchild Semiconductor's RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability. The circuit incorporates ionimplanted, 0.5-m gate MESFET devices fabricated on a semi-insulating GaAs substrate. The first two stages are 4cell distributed amplifiers utilizing dual-gate FETs for improved gain per stage and to facilitate gain control (4x125m & 4x250m). The third stage is a 3-cell distributed dual-gate FET amplifier designed for high output power and efficiency (3x500m). The RMM2080 amplifier is designed for interconnection with microstrip transmission media using fully automatic assembly techniques.
Features
* * * * * * * * 2-18GHz Bandwidth 24dB Typical Gain 2dB Gain Flatness 20dBm Output Power Typical Three Stages of Distributed Amplification Gain Control of up to 70dB range Dual-Gate Ion-Implanted 0.5m FETs Chip Size: 4.14mm x 3.22mm x 0.1mm
Device
Absolute Ratings
Symbol Vd Vg Vgd Id PIN(CW) TCASE TSTORAGE RJC Parameter Positive Drain DC Voltage (+7V Typ) Negative DC Voltage Simultaneous (Vd-Vg) Positive DC Current RF Input Power (from 50 source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Ratings +8 -2 10 400 +8 -30 to +85 -55 to +125 22 Units V V V mA dBm C C C/W
(c)2004 Fairchild Semiconductor Corporation
RMM2080 Rev. C
RMM2080
Electrical Characteristics (at 25C)
50 system, Vd = +7V, quiescent current (Idq) = 300 mA, GC1, GC2 = +1.5V
Parameter Frequency Range Gate Supply Voltage (Vg)1 RF Output Power @ -1dB Small Signal Gain Gain Flatness vs. Freq. Input/Output Return Loss Gain Control Range Gain Control Voltage, GC1&22
Notes: 1. Typical range of the negative gate voltage is -0.9 to 0.0V to set typical Idq of 300 mA. 2. GC1 and GC2 of +1.5V and VG23 = open corresponds to maximum gain and power.
Min 2
18
Typ - -0.7 20 24 2 7
Max 18
70 -5
+1.5
Units GHz V dBm dB dB dB dB V
VG1
GC1
GC2
VDD
VG23
RF IN
RF OUT
VG1
GC1
GC2
VD VG2-3
Figure 1. Block Diagram and Circuit Schematic
0.020 0.028 0.036 0.049 0.044 0.057 0.106 0.114 0.146 0.141 0.158 0.155
0.127 0.122 0.118 0.114 0.100
VG1
GC1
GC2
VDD
VG23
0.114 0.100
IN VG1
OUT
RMM2080
VG2-3
CG1
CG2
VD
0.009 0.005
0.000
0.041
0.049
0.087
0.095
0.141
0.163 0.158 0.154 0.149
0.017
0.025
Figure 2. Location and Size of Bonding Pads (Dimensions in Inches)
(c)2004 Fairchild Semiconductor Corporation RMM2080 Rev. C
0.000
RMM2080
GC
100pF Capacitor, 0.015"x0.015"x0.0005", 3 Places 0.025"TH Cu-Mo-Cu or Cu-W Carrier Au Plated 0.010"TH Cu Shim or Ridge
50 Ohm, 0.015"TH Alumina Substrate, 2 Places
RF IN
IN
VG1 GC1 GC2
VDD
VG23 OUT
RF OUT 0.01F Capacitor, 0.031"x0.063"x0.031", 2 Places 0.001" Dia. Au wire, Typ.
RMM2080
VG1
GC1
GC2 VD
VG2-3
0.050"x0.020"x0.005" Stand-Off, 2 Places
0.001"x0.005" or 0.002"x0.004" Au Ribbon, 3 Places
VG
VD
Figure 3. Example of Assembled Module
(c)2004 Fairchild Semiconductor Corporation
RMM2080 Rev. C
RMM2080
Performance Data
Input & Output Return Loss Vd=7.0V, Id=0.3A, GC1,2=1.5V 0 5 Return Loss (dB) 10 Gain (dB) 15 20 25 S22 30 35 0 2 4 6 8 10 12 Frequency (GHz) 14 16 18 20 S11 30 28 26 24 22 20 18 16 14 12 10 0 2 4 6 8 10 12 Frequency (GHz) 14 16 18 20 Small Signal Gain Vd=7.0V, Id=0.3A, GC1,2=1.5V
Gain & Pout vs, Control Voltage Vd=7.0V, Id=0.3A @ GC1,2=1.5V 30 Gain 25 20 Gain (dB) 15 10 5 0 -5 1.5 1 0.5 0 -0.5 Vcontrol (V) -1 - 1.5 -2 2GHz 10GHz 18GHz 5.00 0.00 P1 30.00 25.00 20.00 15.00 10.00 P1 (dBm) 35.00
The above data is derived from fixtured measurements which include 3 parallel, 1 mil diameter, 15 mil long, gold bond wires connected to the RF input and output. The Id @ 1dB compression increases to approximately 0.45 A. The dc supply should be able to support the required current to achieve the above performance.
(c)2004 Fairchild Semiconductor Corporation
RMM2080 Rev. C
TRADEMARKS
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DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I11

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