![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C, Chip capability TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q VDSS ID25 RDS(on) trr = 300 V = 52 A = 60 mW 250 ns Maximum Ratings 300 300 20 30 52 208 52 30 1.5 5 360 -55 ... +150 150 -55 ... +150 300 V V V V A A A mJ J V/ns W C C C C TO-247 AD (IXFH) (TAB) TO-268 (D3) ( IXFT) G S (TAB) TO-264 AA (IXFK) TO-247 TO-264 TO-247 TO-264 TO-268 1.13/10 Nm/lb.in. 0.9/6 Nm/lb.in. 6 10 4 g g g G = Gate S = Source G D S D (TAB) TAB = Drain Features * Low gate charge * International standard packages * Epoxy meet UL 94 V-0, flammability classification * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Avalanche energy and current rated * Fast intrinsic Rectifier Advantages * Easy to mount * Space savings * High power density Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 300 2 4 200 TJ = 25C TJ = 125C 50 1 V V nA mA mA VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 ms, duty cycle d 2 % 60 mW IXYS reserves the right to change limits, test conditions, and dimensions. 98522B (7/00) (c) 2000 IXYS All rights reserved 1-2 IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 22 35 5300 VGS = 0 V, VDS = 25 V, f = 1 MHz 1010 200 27 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1.5 W (External), 60 80 25 150 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 34 75 0.35 TO-247 TO-264 0.25 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W K/W Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 TO-247 AD (IXFH) Outline gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 * ID25, pulse test 1.5 2.49 TO-264 AA Outline Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 52 208 1.5 250 A A V ns mC A Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IS -di/dt = 100 A/ms, VR = 100 V 1 8 TO-268AA (D3 PAK) Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Min. Recommended Footprint (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
Price & Availability of IXFH52N30Q
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |