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LAB MECHANICAL DATA Dimensions in mm (inches) SEME IRFN150SMD N-CHANNEL POWER MOSFET 3 .6 0 (0 .1 4 2 ) M ax. 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 3 0 .7 6 (0 .0 3 0 ) m in . VDSS ID(cont) RDS(on) FEATURES 100V 19A W 0.070W 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) * HERMETICALLY SEALED SURFACE MOUNT PACKAGE * SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE. 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1) 9) 6) 4) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) * SIMPLE DRIVE REQUIREMENTS * LIGHTWEIGHT * HIGH PACKING DENSITIES SMD1 Pad 1 - Source Pad 2 - Drain Pad 3 - Gate Note: IRFxxxSM also available with pins 1 and 3 reversed. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VGS ID ID IDM PD EAS dv/dt TJ , Tstg TL RqJC RqJ-PCB Gate - Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25C Linear Derating Factor Single Pulse Avalanche Energy Peak Diode Recovery 3 Operating and Storage Temperature Range Package Mounting Surface Temperature (for 5 sec) Thermal Resistance Junction to Case Thermal Resistance Junction to PCB (Typical) 2 20V (VGS = 0 , Tcase = 25C) (VGS = 0 , Tcase = 100C) 27A 19A 108A 100W 0.8W/C 150mJ 5.5V/ns -55 to 150C 300C 1.25C/W 3C/W Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) @ VDD = 25V , L 0.3mH , RG = 25W , Peak IL = 27A , Starting TJ = 25C 3) @ ISD 27A , di/dt 70A/ms , VDD BVDSS , TJ 150C , SUGGESTED RG = 2.35W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim.7/00 LAB ELECTRICAL CHARACTERISTICS (Tamb = 25C unless otherwise stated) Parameter BVDSS STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage SEME IRFN150SMD Test Conditions VGS = 0 ID = 1mA VGS = 10V VGS = 10V VDS = VGS 1 Min. 100 Typ. Max. Unit V ID = 1mA DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on) Static Drain - Source On-State Resistance 1 Reference to 25C ID = 19A ID = 27A ID = 250mA IDS = 19A VDS = 0.8BVDSS TJ = 125C VGS = 20V VGS = -20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V VDS = 0.5BVDSS ID = 27A 1 0.13 0.070 0.081 2 9 25 250 100 -100 3700 1100 200 4 V / C W V S(W )W( VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS Forward Transconductance VDS 15V VGS = 0 Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 1 Gate - Source Charge 1 Gate - Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time mA nA pF ID = 27A 50 8 15 125 22 65 35 190 170 130 27 108 nC nC VDS = 0.5BVDSS VDD = 50V ID = 27A RG = 2.35W ns SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current 2 A V ns Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time IS = 27A VGS = 0 IF = 27A TJ = 25C TJ = 25C Negligible 0.8 2.8 1.8 500 2.9 di / dt 100A/ms VDD 50V mC PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to die) Internal Source Inductance (from centre of source pad to end of source bond wire) nH Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) Repetitive Rating - Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim.7/00 |
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