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Semiconductor
HGTG20N120E2
34A, 1200V N-Channel IGBT
Package
JEDEC STYLE TO-247
EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL)
April 1995
Features
* 34A, 1200V * Latch Free Operation * Typical Fall Time - 780ns * High Input Impedance * Low Conduction Loss
Description
The HGTG20N120E2 is a MOS gated, high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. The development type number for this device is TA49009.
PACKAGING AVAILABILITY PART NUMBER HGTG20N120E2 PACKAGE TO-247 BRAND G20N120E2
E
Terminal Diagram
C
G
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector-Gate Breakdown Voltage RGE = 1M. . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR Collector Current Continuous At TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = +90oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC90 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching SOA at TC = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (0.125" from case for 5 seconds) Short Circuit Withstand Time (Note 2) At VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC At VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PEAK) = 720V, TC = +125oC, RGE = 25
HGTG20N120E2 1200 1200 34 20 100 20 30 100A at 0.8 BVCES 150 1.20 -55 to +150 260
UNITS V V A A A V V W W/oC oC oC
3 15
s s
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641 4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright
(c) Harris Corporation 1995
File Number
3370.2
3-98
Specifications HGTG20N120E2
Electrical Specifications
TC = +25oC, Unless Otherwise Specified LIMITS PARAMETERS Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES VCE = 0.8 BVCES Collector-Emitter Saturation Voltage VCE(SAT) IC = IC90, VGE = 15V TC = +25oC TC = +125oC TC = +25oC TC = +125oC IC = IC90, VGE = 10V TC = +25oC TC = Gate-Emitter Threshold Voltage VGE(TH) IGES VGEP QG(ON) IC = 500A, VCE = VGE VGE = 20V IC = IC90, VCE = 0.5 BVCES IC = IC90, VCE = 0.5 BVCES RL = 48 VGE = 15V VGE = 20V IC = IC90, VGE = 15V, VCE = 0.8 BVCES, RG = 25, TJ = +125oC +125oC MIN 1200 TYP MAX UNIT V A mA V V V V V
3.0
2.9 3.0 3.1 3.3 4.5
250 1.0 3.5 3.6 3.8 4.0 6.0 250 150 200 620 1000 520 1000 0.83
TC = +25oC
Gate-Emitter Leakage Current Gate-Emitter Plateau Voltage On-State Gate Charge
-
7.0 110 150 100 150 520 780 7.0 100 150 420 780 7.0 0.70
nA V nC nC ns ns ns ns mJ ns ns ns ns mJ
oC/W
Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-Off Energy (Note 1) Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-Off Energy (Note 1) Thermal Resistance NOTE:
tD(ON) tR tD(OFF)I tFI WOFF tD(ON) tR tD(OFF)I tFI WOFF RJC
L = 50H
RL = 48
L = 50H
IC = IC90, VGE = 10V, VCE = 0.8 BVCES, RG = 25, TJ = +125oC
-
1. Turn-Off Energy Loss (WOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTG20N120E2 was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3-99
HGTG20N120E2 Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL)
FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
FIGURE 3. MAXIMUM DC COLLECTOR CURRENT AS A FUNCTION OF CASE TEMPERATURE
FIGURE 4. FALL TIME AS A FUNCTION OF COLLECTOREMITTER CURRENT
FIGURE 5. CAPACITANCE AS A FUNCTION OF COLLECTOREMITTER VOLTAGE
FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT. (REFER TO APPLICATION NOTES AN7254 AND AN7260)
3-100
HGTG20N120E2 Typical Performance Curves (Continued)
FIGURE 7. SATURATION VOLTAGE AS A FUNCTION OF COLLECTOR-EMITTER CURRENT
FIGURE 8. TURN-OFF SWITCHING LOSS AS A FUNCTION OF COLLECTOR-EMITTER CURRENT
FIGURE 9. TURN-OFF DELAY AS A FUNCTION OF COLLECTOREMITTER CURRENT
FIGURE 10. OPERATING FREQUENCY AS A FUNCTION OF COLLECTOR-EMITTER CURRENT AND VOLTAGE
FIGURE 11. COLLECTOR-EMITTER SATURATION VOLTAGE
3-101
HGTG20N120E2 Test Circuit
L = 50H
1/RG = 1/RGEN + 1/RGE RGEN = 50
VCC 960V
+ -
20V 0V RGE = 50
FIGURE 12. INDUCTIVE SWITCHING TEST CIRCUIT
Operating Frequency Information
Operating frequency information for a typical device (Figure 10) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 7, 8 and 9. The operating frequency plot (Figure 10) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/tD(OFF)I. tD(OFF)I deadtime (the denominator) has been arbitrarily held to 10% of the onstate time for a 50% duty factor. Other definitions are possible. tD(OFF)I is defined as the time between the 90% point of the trailing edge of the input pulse and the point where the collector current falls to 90% of its maximum value. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJMAX. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (Pd - Pc)/ WOFF. The allowable dissipation (Pd) is defined by Pd = (TJMAX - TC)/RJC. The sum of device switching and conduction losses must not exceed Pd. A 50% duty factor was used (Figure 10) and the conduction losses (Pc) are approximated by Pc = (VCE * ICE)/2. WOFF is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The switching power loss (Figure 10) is defined as fMAX2 * WOFF . Turn-on switching losses are not included because they can be greatly influenced by external circuit conditions and components.
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as " ECCOSORBD LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended. Trademark Emerson and Cumming, Inc.
3-102

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