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| Power Transistors 2SC3973, 2SC3973A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 0.70.1 Unit: mm 10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2 s Features q q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings 800 900 800 900 500 8 15 7 4 45 2 150 -55 to +150 Unit V 16.70.3 14.00.5 Parameter Collector to base voltage Collector to 2SC3973 2SC3973A 2SC3973 Symbol VCBO VCES VCEO VEBO ICP IC IB emitter voltage 2SC3973A Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V V V A A A W C C Solder Dip s Absolute Maximum Ratings 4.0 7.50.2 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) PC Tj Tstg s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time 2SC3973 2SC3973A (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 800V, IE = 0 VCB = 900V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 4A IC = 4A, IB = 0.8A IC = 4A, IB = 0.8A VCE = 10V, IC = 0.5A, f = 1MHz IC = 4A, IB1 = 0.8A, IB2 = -1.6A, VCC = 200V 20 1.0 3.0 0.3 500 15 8 1.0 1.5 V V MHz s s s min typ max 100 100 100 Unit A A V 1 Power Transistors PC -- Ta 60 12 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25C 10 2SC3973, 2SC3973A IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=5 30 10 3 1 0.3 25C 0.1 0.03 0.01 0.1 TC=100C -25C VCE(sat) -- IC Collector power dissipation PC (W) 50 (1) 40 Collector current IC (A) 8 IB=1200mA 6 1000mA 800mA 600mA 400mA 300mA 200mA 2 100mA 30 20 (2) (3) 0 0 20 40 60 80 100 120 140 160 (4) 4 10 0 0 2 4 6 8 10 12 0.3 1 3 10 30 100 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 hFE -- IC IC/IB=5 1000 VCE=5V 1000 fT -- IC VCE=10V f=1MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 30 300 Transition frequency fT (MHz) 100 300 10 100 100 3 30 30 1 25C 0.3 TC=-25C 100C 10 TC=-25C 25C 100C 10 3 3 0.1 0.1 0.3 1 3 10 30 100 1 0.1 0.3 1 3 10 30 1 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 1000 100 IE=0 f=1MHz TC=25C 30 ton, tstg, tf -- IC Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=-IB2) VCC=200V TC=25C tstg 1 0.3 0.1 0.03 ton tf Area of safe operation (ASO) 100 30 ICP Non repetitive pulse TC=25C Collector output capacitance Cob (pF) Switching time ton,tstg,tf (s) 300 Collector current IC (A) 10 3 10 3 IC t=0.5ms 1ms 10ms DC 100 30 1 0.3 0.1 0.03 0.01 10 3 1 1 3 10 30 100 0.01 0 1 2 3 4 5 6 7 8 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Area of safe operation, reverse bias ASO 8 7 IC Lcoil=30H IC/IB=5 (IB1=-IB2) TC100C 2SC3973, 2SC3973A Reverse bias ASO measuring circuit L coil IB1 Vin T.U.T IC Collector current IC (A) 6 5 4 3 2 1 0 0 100 200 300 400 500 600 700 800 -IB2 VCC tW Vclamp Collector to emitter voltage VCE (V) Rth(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.2A (2W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink Thermal resistance Rth(t) (C/W) 1000 100 (1) 10 (2) 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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