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| PD- 91412L IRF7422D2 FETKY TM MOSFET & Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint Description The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. A A S G 1 8 7 A A D D D D VDSS = -20V RDS(on) = 0.09 Schottky Vf = 0.52V 2 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Maximum -4.3 -3.4 -33 2.0 1.3 16 12 -5.0 -55 to +150 Units A W mW/C V V/ns C Thermal Resistance Ratings Parameter RJA Junction-to-Ambient Maximum 62.5 Units C/W Notes: Repetitive rating - pulse width limited by max. junction temperature (see fig. 11) ISD -2.2A, di/dt -50A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s - duty cycle 2% Surface mounted on FR-4 board, t 10sec. www.irf.com 1 11/27/01 IRF7422D2 MOSFET Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Continuous Source Current(Body Diode) Pulsed Source Current (Body Diode) Body Diode Forward Voltage Reverse Recovery Time (Body Diode) Reverse RecoveryCharge Parameter Max. Average Forward Current Max. peak one cycle Non-repetitive Surge current Min. -20 --- --- -0.70 4.0 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Min. --- --- --- --- --- Typ. --- 0.07 0.115 --- --- --- --- --- --- 15 2.2 6.0 8.4 26 51 33 610 310 170 Typ. --- --- --- 56 71 Max. Units Conditions --- V VGS = 0V, ID = -250A 0.09 VGS = -4.5V, ID = -2.2A 0.14 VGS = -2.7V, ID = -1.8A --- V VDS = VGS, ID = -250A --- S VDS = -16V, ID = -2.2A -1.0 VDS = -16V, VGS = 0V A -25 VDS = -16V, VGS = 0V, TJ = 125C -100 VGS = -12V nA 100 VGS = 12V 22 ID = -2.2A 3.3 nC VDS = -16V 9.0 VGS = -4.5V, See Fig. 6 and 9 --- VDD = -10V --- ID = -2.2A ns --- RG = 6.0 --- RD = 4.5, See Fig. 10 --- VGS = 0V --- pF VDS = -15V --- = 1.0MHz, See Fig. 5 Max. Units Conditions -2.5 A -17 -1.0 V TJ = 25C, IS = -1.8A, VGS = 0V 84 ns TJ = 25C, IF = -2.2A 110 nC di/dt = -100A/s Conditions 50% Duty Cycle. Rectangular Wave, Tc = 25C 50% Duty Cycle. Rectangular Wave, Tc = 70C 5s sine or 3s Rect. pulse Following any rated 10ms sine or 6ms Rect. pulse load condition & with Vrrm applied MOSFET Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Schottky Diode Maximum Ratings If (av) ISM Max. Units 2.8 A 1.8 200 20 A Schottky Diode Electrical Specifications Vfm Parameter Max. Forward voltage drop Max. Units 0.57 0.77 V 0.52 0.79 0.13 mA 18 310 pF 4900 V/s Conditions If = 3.0, Tj = 25C If = 6.0, Tj = 25C If = 3.0, Tj = 125C If = 6.0, Tj = 125C . Vr = 20V Tj = 25C Tj = 125C Vr = 5Vdc ( 100kHz to 1 MHz) 25C Rated Vr Irm Ct dv/dt Max. Reverse Leakage current Max. Junction Capacitance Max. Voltage Rate of Charge ( HEXFET is the reg. TM for International Rectifier Power MOSFET's ) 2 www.irf.com IRF7422D2 Power Mosfet Characteristics 100 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V TOP 100 -ID , Drain-to-Source Current (A) 10 -ID , Drain-to-Source Current (A) VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V TOP 10 1 1 -1.5V -1.5V 20s PULSE WIDTH TJ = 25C A 0.1 1 10 100 0.1 0.01 0.1 0.01 20s PULSE WIDTH TJ = 150C 0.1 1 10 A 100 -VDS , Drain-to-Source Voltage (V) -V , Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D = -3.6A -ID , Drain-to-Source Current (A) TJ = 25C 10 1.5 TJ = 150C 1.0 1 0.5 0.1 1.5 2.0 2.5 3.0 VDS = -15V 20s PULSE WIDTH 3.5 4.0 4.5 5.0 A 0.0 -60 -40 -20 0 20 40 60 80 VGS = -4.5V A 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7422D2 Power Mosfet Characteristics 1500 -VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz Ciss = Cgs + C gd , Cds SHORTED Crss = C gd Coss = Cds + C gd 10 I D = -2.2A VDS = -16V 8 C, Capacitance (pF) Ciss 1000 C oss Crss 500 6 4 2 0 1 10 100 A 0 0 5 10 FOR TEST CIRCUIT SEE FIGURE 12 15 20 25 A -VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 TJ = 150C TJ = 25C -ID , Drain Current (A) I 100us 10 1ms 1 0.1 0.3 0.6 0.9 1.2 VGS = 0V A 1 1 TC = 25 C TJ = 150 C Single Pulse 10 10ms 1.5 100 -VSD , Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7422D2 Power Mosfet Characteristics 100 Thermal Response (Z thJA ) 0.50 0.20 10 0.10 0.05 0.02 1 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient RDS (on) , Drain-to-Source On Resistance () RDS (on) , Drain-to-Source On Resistance () 0.4 0.14 0.12 0.3 0.10 0.2 VGS = -2.5V I D = -4.3A 0.08 0.1 0.06 V 0.0 0 GS = -5.0V A 2 4 6 8 0.04 2 3 4 5 6 7 A I D , Drain Current (A) V GS , Gate-to-Source Voltage (V) Fig 10. Typical On-Resistance Vs. Drain Current Fig 11. Typical On-Resistance Vs. Gate Voltage www.irf.com 5 IRF7422D2 Schottky Diode Characteristics 100 100 TJ = 150C 10 125C 100C Reverse Current - IR (mA) 1 75C 0.1 50C 25C A 0 4 8 12 16 20 Instantaneous Forward Current - IF (A) 0.01 10 TJ = 150C TJ = 125C TJ = 25C 0.001 Reverse Voltage - V R (V) Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage 1000 1 Junction Capacitance - C T (pF) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 TJ = 25C Forward Voltage Drop - V FM (V) Fig. 12 - Typical Forward Voltage Drop Characteristics 100 0 5 10 15 A 20 Reverse Voltage - V R (V) Fig.14 - Typical Junction Capacitance Vs. Reverse Voltage 6 www.irf.com IRF7422D2 SO-8 Package Details D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 8 6 E 1 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 2 3 4 .050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y K x 45 8X L 7 8X c NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 3X 1.27 [.050] FOOTPRINT 8X 0.72 [.028] 6.46 [.255] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: THIS IS AN IRF7101 (MOSFET) DATE CODE (YWW) Y = LAST DIGIT OF THE YEAR WW = WEEK LOT CODE PART NUMBER INTERNATIONAL RECTIFIER LOGO YWW XXXX F7101 www.irf.com 7 IRF7422D2 Tape and Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 11/01 8 www.irf.com |
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