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Preliminary Data Sheet No. PD60130-J IR2122(S) CURRENT SENSING SINGLE CHANNEL DRIVER Features * Floating channel designed for bootstrap operation * * * * * Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout 3.3V, 5V and 15V input logic compatible FAULT lead indicates shutdown has occured Output out of phase with input Product Summary VOFFSET IO+/VOUT VCSth ton/off (typ.) 600V max. 110 mA / 110 mA 10 - 20V 500 mV 250 & 200 ns Description The IR2122(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL outputs, down to 3.3V. The protection circuity detects over-current in the driven power transistor and terminates the gate drive voltage. An open drain FAULT signal is provided to indicate that an over-current shutdown has occurred. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side or low side configuration which operates up to 600 volts. Packages 8-Lead SOIC 8-Lead PDIP Typical Connection V CC IN FAULT V CC IN FAULT COM VB HO CS VS (Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout. www.irf.com 1 IR2122(S) Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Symbol VB VS VHO VCC VIN VFLT VCS dVs/dt PD RTHJA TJ TS TL Definition High Side Floating Supply Voltage High Side Floating Offset Voltage High Side Floating Output Voltage Logic Supply Voltage Logic Input Voltage FAULT Output Voltage Min. -0.3 VB - 25 VS - 0.3 -0.3 -0.3 -0.3 VS - 0.3 -- (8 Lead DIP) (8 Lead SOIC) (8 Lead DIP) (8 Lead SOIC) -- -- -- -- -- -55 -- Max. 625 VB + 0.3 VB + 0.3 25 VCC + 0.3 VCC + 0.3 VB + 0.3 50 1.0 0.625 125 200 150 150 300 Units V Current Sense Voltage Allowable Offset Supply Voltage Transient Package Power Dissipation @ TA +25C Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Lead Temperature (Soldering, 10 seconds) V/ns W C/W C Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential. Symbol VB VS VHO VCC VIN VFLT VCS TA Definition High Side Floating Supply Voltage High Side Floating Offset Voltage High Side Floating Output Voltage Logic Supply Voltage Logic Input Voltage FAULT Output Voltage Min. VS + 13 Note 1 VS 13 0 0 VS -40 Max. VS + 20 600 VB 20 VCC VCC VS + 5 150 Units V Current Sense Signal Voltage Ambient Temperature C Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. (Please refer to the Design Tip DT97-3 for more details). 2 www.irf.com IR2122(S) Dynamic Electrical Characteristics VBIAS (VCC, VBS) = 15V, CL = 1000 pF and TA = 25C unless otherwise specified. The dynamic electrical characteristics are measured using the test circuit shown in Figure 3. Symbol ton toff tr tf tbl tcs tflt Definition Turn-On Propagation Delay Turn-Off Propagation Delay Turn-On Rise Time Turn-Off Fall Time Start-Up Blanking Time CS Shutdown Propagation Delay CS to FAULT Pull-Up Propagation Delay Min. Typ. Max. Units Test Conditions -- -- -- -- 500 -- -- 250 200 250 250 900 350 450 -- -- -- -- -- -- -- ns VS = 0V VS = 600V CL = 1000 pF CL = 1000 pF Static Electrical Characteristics VBIAS (VCC, VBS) = 15V and TA = 25C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM. The VO and IO parameters are referenced to VS. Symbol VIH VIL VCSTH+ VOH VOL ILK IQBS IQCC IIN+ IINICS+ ICSVBSUV+ VBSUVIO+ IO- Definition Logic "0" Input Voltage (OUT = LO) Logic "1" Input Voltage (OUT = HI) CS Input Positive Going Threshold High Level Output Voltage, VBIAS - VO Low Level Output Voltage, VO Offset Supply Leakage Current Quiescent VBS Supply Current Quiescent VCC Supply Current Logic "1" Input Bias Current Logic "0" Input Bias Current "High" CS Bias Current "High" CS Bias Current VBS Supply Undervoltage Positive Going Threshold VBS Supply Undervoltage Negative Going Threshold Output High Short Circuit Pulsed Current Output Low Short Circuit Pulsed Current Min. Typ. Max. Units Test Conditions 3.0 -- 350 -- -- -- -- -- -- -- -- -- 10.0 9.5 110 110 -- -- 500 -- -- -- 150 60 7.0 -- -- -- 11.4 10.4 130 130 -- 0.8 650 100 100 50 350 120 15 1.0 1.0 1.0 13.0 12.5 -- -- mA V A mV V VCC = 10V to 20V VCC = 10V to 20V VCC = 10V to 20V IO = 0A IO = 0A VB = VS = 600V VIN = 0V or 5V VIN = 0V or 5V VIN = 0V VIN = 5V VCS = 3V VCS = 0V VO = 0V, VIN = 0V PW 10 s VO = 15V, VIN = 5V PW 10 s www.irf.com 3 IR2122(S) Functional Block Diagram Lead Definitions Lead Symbol Description VCC IN FAULT COM VB HO VS CS Logic and gate drive supply Logic input for gate driver output (HO), out of phase with HO Indicates over-current shutdown has occurred, negative logic Logic ground High side floating supply High side gate drive output High side floating supply return Current sense input to current sense comparator Lead Assignments 8 Lead PDIP 8 Lead SOIC IR2122 4 IR2122S www.irf.com IR2122(S) www.irf.com 5 IR2122(S) Case outlines 8-Lead PDIP D A 5 B F OOT PRINT 8X 0.72 [.028] 01-6014 01-3003 01 (MS-001AB) INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 DIM A b A1 .0040 c 6 E 8 7 6 5 H 0.25 [.010] A 6.46 [.255] D E e e1 H K L 8X 1.78 [.070] 1 2 3 4 .050 BAS IC .025 BAS IC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BAS IC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e e1 A C 3X 1.27 [.050] y K x 45 y 0.10 [.004] 8X b 0.25 [.010] A1 CAB 8X L 7 8X c NOT ES: 1. DIMENS IONING & T OLERANCING PE R ASME Y14.5M-1994. 2. CONT ROLLING DIMENSION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIME TE RS [INCHES]. 4. OUT LINE CONF ORMS T O JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROTRUSIONS NOT T O E XCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROTRUSIONS NOT T O E XCEED 0.25 [.010]. 7 DIMENSION IS T HE LE NGTH OF LEAD FOR SOLDE RING TO A SUBS TRAT E. 8-Lead SOIC 01-6027 01-0021 11 (MS-012AA) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 5/15/2001 6 www.irf.com |
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