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HAT2165H
Silicon N Channel Power MOS FET Power Switching
REJ03G0004-0500Z (Previous ADE-208-1632C (Z)) Rev.5.00 Apr.09.2003
Features
* * * * * High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.5 m typ. (at VGS = 10 V)
Outline
LFPAK
5
5 D
3 12
4
4 G
1, 2, 3 Source 4 Gate 5 Drain
SSS 123
Rev.5.00, Apr.09.2003, page 1 of 10
HAT2165H
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP
Note 2
Ratings 30 20 55 220 55 30 90 30 4.17 150 -55 to +150
Unit V V A A A A mJ W C/W C C
EAR Note 2 Pch
Note3
ch-C Tch Tstg
Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C
Rev.5.00, Apr.09.2003, page 2 of 10
HAT2165H
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol Min V(BR)DSS 30 Typ -- -- -- -- -- 2.5 3.4 100 5180 1200 380 0.5 33 15 7.1 13 65 60 9.5 0.81 40 Max -- -- 10 1 2.5 3.3 5.3 -- -- -- -- -- -- -- -- -- -- -- -- 1.06 -- Unit V V A A V m m S pF pF pF nc nc nc ns ns ns ns V ns VDD = 10 V VGS = 4.5 V ID = 55 A VGS = 10 V, ID = 27.5 A VDD 10 V RL = 0.36 Rg = 4.7 IF = 55 A, VGS = 0 Note4 IF = 55 A, VGS = 0 diF/ dt = 100 A/ s Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 27.5 A, VGS = 10 V Note4 ID = 27.5 A, VGS = 4.5 V VDS = 10 V VGS = 0 f = 1 MHz
Note4
V(BR)GSS 20 IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr -- -- 1.0 -- -- 60 -- -- -- -- -- -- -- -- -- -- -- -- --
ID = 27.5 A, VDS = 10 V Note4
Rev.5.00, Apr.09.2003, page 3 of 10
HAT2165H
Main Characteristics
Power vs. Temperature Derating 40
Pch (W) I D (A)
Maximum Safe Operation Area 500 100
DC
10
30
PW
Op
10
=1
era
1m
10 0 s s
s
0m
n
Channel Dissipation
20
Drain Current
tio
s
10
1 Operation in this area is limited by R DS(on) 0.1 Tc = 25C 1 shot Pulse 0.01 0.1 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V)
0
50
100
150 Tc (C)
200
Case Temperature
Typical Output Characteristics 100 10 V 4.5 V Pulse Test 100 3.0 V
(A)
Typical Transfer Characteristics V DS = 10 V Pulse Test 80
I D (A)
80 2.8 V 60 2.6 V 40 2.4 V
ID Drain Current
60 25C Tc = 75C -25C
Drain Current
40
20
20
VGS = 2.2 V
0
2 4 6 Drain to Source Voltage
8 10 V DS (V)
0
1 2 3 Gate to Source Voltage
5 4 V GS (V)
Rev.5.00, Apr.09.2003, page 4 of 10
HAT2165H
Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test Static Drain to Source on State Resistance vs. Drain Current 10 Pulse Test
V DS(on) (mV)
200
Drain to Source On State Resistance R DS(on) (m )
250
5 VGS = 4.5 V 10 V 2
Drain to Source Voltage
150 I D = 50 A 100 20 A 10 A 0 4 8 12 Gate to Source Voltage 16 20 V GS (V)
50
1 1 3 10 100 300 30 Drain Current I D (A) 1000
Static Drain to Source on State Resistance R DS(on) (m )
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance vs. Temperature 8 Pulse Test 6 I D = 10 A, 20 A 50 A 4 V GS = 4.5 V
Forward Transfer Admittance vs. Drain Current 1000 300 100 30 10 3 1 0.3 0.1 0.1 0.3 1 3 V DS = 10 V Pulse Test 10 30 100 25C 75C Tc = -25C
2 10 V 0 -25
10 A, 20 A, 50 A
0 25 50 75 100 125 150 Case Temperature Tc (C)
Drain Current I D (A)
Rev.5.00, Apr.09.2003, page 5 of 10
HAT2165H
Body-Drain Diode Reverse Recovery Time 100
Reverse Recovery Time trr (ns)
Typical Capacitance vs. Drain to Source Voltage 10000 Ciss
Capacitance C (pF)
3000 1000 300 100 30 10 0 5 10 15 20 VGS = 0 f = 1 MHz 25 30 Coss Crss
50
20 di / dt = 100 A / s V GS = 0, Ta = 25C 0.3 1 3 10 30 100 Reverse Drain Current I DR (A)
10 0.1
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
V DS (V)
Switching Characteristics 16
V GS (V)
40
I D = 55 A VDD = 5 V 10 V 25 V
V GS 12
1000 300 100 30 t d(on) 10 tr 3 V GS = 10 V , VDS = 10 V Rg = 4.7 , duty < 1 % tf t d(off)
30 V DD = 25 V 20 V DS 10 10 V 5V
Drain to Source Voltage
8
4
0
20 40 60 80 Gate Charge Qg (nc)
0 100
Gate to Source Voltage
Switching Time t (ns)
0.1 0.2 0.5 1 2 5 10 20 50 100 Drain Current I D (A)
Rev.5.00, Apr.09.2003, page 6 of 10
HAT2165H
Reverse Drain Current vs. Source to Drain Voltage
Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs. Channel Temperature Derating 100 I AP = 30 A V DD = 15 V duty < 0.1 % Rg > 50
100
(A)
80
Reverse Drain Current IDR
10 V 5V V GS = 0
80
60
60
40
40
20 Pulse Test 0 0.4 0.8 1.2 1.6 V SD (V) 2.0
20 0 25
Source to Drain Voltage
50 75 100 125 150 Channel Temperature Tch (C)
Avalanche Test Circuit EAR =
Avalanche Waveform 1 2 L * IAP2 * VDSS VDSS - V DD
V DS Monitor
L I AP Monitor
V (BR)DSS I AP VDD ID V DS
Rg Vin 15 V
D. U. T
50 0 VDD
Rev.5.00, Apr.09.2003, page 7 of 10
HAT2165H
Normalized Transient Thermal Impedance vs. Pulse Width 3
Normalized Transient Thermal Impedance s (t)
Tc = 25C 1 D=1 0.5
0.2
0.3
0.1
0.1
0.05
ch - c(t) = s (t) * ch - c ch - c = 4.17C/ W, Tc = 25C
PDM
0.03
0.02 1 0.0
1s h
D=
PW T
PW T
p ot
uls
e
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit Vin Monitor Rg D.U.T. RL Vin Vin 10 V V DS = 10 V Vout Monitor
Switching Time Waveform 90% 10% 10% 90% td(on) tr 90% td(off) tf 10%
Vout
Rev.5.00, Apr.09.2003, page 8 of 10
HAT2165H
Package Dimensions
As of January, 2003
Unit: mm
4.9 5.3 Max 4.0 0.2 5
0.25 -0.03
+0.05
3.3
1.0
3.95
1
4
6.1 -0.3
+0.1
0 - 8
1.1 Max +0.03 0.07 -0.04
0.75 Max 1.27 0.10 *0.40 0.06
0.25 M
0.6 -0.20 1.3 Max
+0.25
*0.20 -0.03
+0.05
*Ni/Pd/Au plating
Package Code JEDEC JEITA Mass (reference value)
LFPAK -- -- 0.080 g
Rev.5.00, Apr.09.2003, page 9 of 10
4.2
HAT2165H
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon 0.0
Rev.5.00, Apr.09.2003, page 10 of 10

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