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| DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1793 SWITCHING N- AND P-CHANNEL POWER MOS FET DESCRIPTION The PA1793 is N- and P-Channel MOS Field Effect Transistors designed for Motor Drive application. PACKAGE DRAWING (Unit: mm) 8 5 N-Channel 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 P-Channel 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 1 4 5.37 Max. +0.10 -0.05 FEATURES * Low on-state resistance N-Channel RDS(on)1 = 69 m MAX. (VGS = 4.5 V, ID = 1.5 A) 1.44 6.0 0.3 4.4 0.8 RDS(on)2 = 72 m MAX. (VGS = 4.0 V, ID = 1.5 A) P-Channel RDS(on)1 = 115 m MAX. (VGS = -4.5 V, ID = -1.5 A) RDS(on)2 = 120 m MAX. (VGS = -4.0 V, ID = -1.5 A) RDS(on)3 = 190 m MAX. (VGS = -2.5 V, ID = -1.0 A) * Low input capacitance N-Channel Ciss = 160 pF TYP. P-Channel Ciss = 370 pF TYP. * Built-in G-S protection diode * Small and surface mount package (Power SOP8) 1.8 Max. RDS(on)3 = 107 m MAX. (VGS = 2.5 V, ID = 1.0 A) 0.15 0.05 Min. 0.5 0.2 0.10 1.27 0.40 0.78 Max. 0.12 M +0.10 -0.05 EQUIVALENT CIRCUIT ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 Gate Body Diode Gate Body Diode Drain Drain PA1793G Gate Protection Diode Source Gate Protection Diode Source N-Channel P-Channel Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G16059EJ1V0DS00 (1st edition) Date Published September 2002 NS CP(K) Printed in Japan (c) 2002 PA1793 ABSOLUTE MAXIMUM RATINGS (TA = 25C, All terminals are connected.) Parameter Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Total Power Dissipation (1 unit) Note2 Symbol VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg N-Channel 20 12 3 12 1.7 2.0 150 P-Channel -20 Unit V V A A W W C C m 12 m3 m 12 Total Power Dissipation (2 units) Note2 Channel Temperature Storage Temperature -55 to +150 Notes 1. PW 10 s, Duty Cycle 1% 2 2. Mounted on ceramic substrate of 5500 mm x 2.2 mm, TA = 25C 2 DataSheet G16059EJ1V0DS PA1793 ELECTRICAL CHARACTERISTICS (TA = 25C, All terminals are connected.) A) N-Channel Characteristice Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Symbol IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 16 V VGS = 4.0 V ID = 3.0 A IF = 3.0 A, VGS = 0 V IF = 3 A, VGS = 0 V di/dt = 50 A/s Test Conditions VDS = 20 V, VGS = 0 V VGS = 12 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID =1.5 A VGS = 4.5 V, ID = 1.5 A VGS = 4.0 V, ID = 1.5 A VGS = 2.5 V, ID = 1.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 10 V, ID = 1.5 A VGS = 4.0 V RG = 10 0.5 1.0 55 57 78 160 60 40 17 50 86 80 3.1 0.7 1.4 0.86 70 12 69 72 107 1.0 MIN. TYP. MAX. 10 Unit A A V S m m m pF pF pF ns ns ns ns nC nC nC V ns nC 10 1.5 TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL VGS PG. RG Wave Form VGS 0 10% VGS 90% IG = 2 mA 50 RL VDD VDD VDS 90% 90% 10% 10% PG. VGS 0 = 1 s Duty Cycle 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf DataSheet G16059EJ1V0DS 3 PA1793 B) P-Channel Characteristics Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Symbol IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = -10 V VGS = -4.0 V ID = -3.0 A IF = 3.0 A, VGS = 0 V IF = 3 A, VGS = 0 V di/dt = 10 A/s Test Conditions VDS = -20 V, VGS = 0 V VGS = MIN. TYP. MAX. -10 Unit A A V S m 12 V, VDS = 0 V -0.5 1.0 75 80 116 370 110 40 120 260 410 360 3.4 1.3 1.6 0.86 24 1.5 -1.0 m 10 -1.5 VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -1.5 A VGS = -4.5 V, ID = -1.5 A VGS = -4.0 V, ID = -1.5 A VGS = -2.5 V, ID = -1.0 A VDS = -10 V VGS = 0 V f = 1 MHz VDD = -10 V, ID = -1.5 A VGS = -4.0 V RG = 10 115 120 190 m m m pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL VGS PG. RG Wave Form VGS (-) 0 10% VGS 90% IG = -2 mA 50 RL VDD VDD VDS (-) 90% 90% 10% 10% PG. VGS (-) 0 = 1 s Duty Cycle 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf 4 DataSheet G16059EJ1V0DS PA1793 TYPICAL CHARACTERISTICS (TA = 25C) A) N-Channel DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 2.8 100 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on ceramic substrate of 2 5500 mm x 2.2 mm 2 units dT - Percentage of Rated Power - % 80 PT - Total Power Dissipation - W 2.4 2 1.6 1.2 0.8 0.4 0 60 40 1 unit 20 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA 100 Mounted on ceramic substrate 2 of 5500 mm x 2.2 mm , 1 unit ID(pulse) TA - Ambient Temperature - C 10 ID - Drain Current - A PW = 100 s ID(DC) 1 DC RDS(on) limited (at VGS = 4.5 V) 1 ms 10 m s 100 m s 0.1 TA = 25C Single pulse Power dissipation limited 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - C/W 100 Rth(ch-A) = 73.5C/W 10 1 0.1 Mounted on ceramic substrate of 2 5500 mm x 2.2 mm Single pulse, 1 unit, TA = 25C 1m 10 m 100 m 1 10 100 1000 0.01 100 PW - Pulse Width - s DataSheet G16059EJ1V0DS 5 PA1793 A) N-Channel FORWARD TRANSFER CHARACTERISTICS 10 VDS = 10 V Pulsed DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 14 VGS = 4.5 V 12 4.0 V ID - Drain Current - A ID - Drain Current - A 1 10 8 2.5 V 6 4 Pulsed 2 0.1 Tch = 125C 75C 25C -25C 0.01 0 1 2 3 0 0 0.5 1 1.5 2 2.5 3 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S VDS = 10 V Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - m 200 100 150 ID = 3 A 10 100 1.5 A 50 Pulsed 0 0 2 4 6 8 10 12 1 Tch = 125C 75C 25C -25C 0.1 0.01 0.1 1 10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m 150 1.2 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate Cut-off Voltage - V 1 0.8 0.6 0.4 0.2 0 VDS = 10 V ID = 1 mA 100 VGS = 2.5 V 4.0 V 50 4.5 V Pulsed 0 0.1 1 10 100 -50 0 50 100 150 ID - Drain Current - A Tch - Channel Temperature - C 6 DataSheet G16059EJ1V0DS PA1793 A) N-Channel DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - m 150 100 SOURCE TO DRAIN DIODE FORWARD VOLTAGE IF - Diode Forward Current - A 10 VGS = 4.5 V 1 0V 100 VGS = 2.5 V 4.0 V 50 4.5 V 0.1 Pulsed 0 -50 0 50 100 150 0.01 0 0.5 Pulsed 1 Tch - Channel Temperature - C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 1000 VF(S-D) - Source to Drain Voltage - V SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF VGS = 0 V f = 1 MHz VDD = 10 V VGS = 4 V RG = 10 td(off) 100 tf tr 10 td(on) Ciss 100 Coss Crss 10 0.1 1 10 100 1 0.1 1 10 100 VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 ID - Drain Current - A DYNAMIC INPUT/OUTPUT CHARACTERITICS 20 5 VDD = 16 V 10 V 4V VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns 16 4 100 12 VGS 3 8 2 10 di/dt = 50 A/s VGS = 0 V 1 0.1 1 10 100 4 VDS ID = 3 A 1 0 0 1 2 3 4 0 IF - Diode Forward Current - A QG - Gate Charge - nC DataSheet G16059EJ1V0DS 7 VGS - Gate to Source Voltage - V PA1793 B) P-Channel DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 2.8 100 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on ceramic substrate of 5500 mm 2 x 2.2 m m 2 units dT - Percentage of Rated Power - % 80 PT - Total Power Dissipation - W 2.4 2 1.6 1.2 0.8 0.4 0 60 40 1 unit 20 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA - 100 TA - Ambient Temperature - C Mounted on ceram ic substrate 2 of 5500 m m x 2.2 mm , 1 unit ID(pulse) - 10 PW = 100 s ID - Drain Current - A ID(DC) 1 ms -1 DC RDS(on) limited (at VGS = -4.5 V) 10 ms 100 ms - 0.1 Power dissipation limited TA = 25C Single pulse - 0.01 - 0.1 -1 - 10 - 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 0 rth(t) - Transient Thermal Resistance - C/W 100 R th(ch-A ) = 7 3.5 C /W 10 1 0.1 M oun ted o n ceram ic sub strate of 2 550 0 m m x 2.2 m m S ingle pulse, 1 un it, T A = 2 5C 1m 10 m 100 m 1 10 100 1000 0.01 100 PW - Pulse Width - s 8 DataSheet G16059EJ1V0DS PA1793 B) P-Channel FORWARD TRANSFER CHARACTERISTICS - 10 VDS = -10 V Pulsed - 14 VGS = -4.5 V - 12 -4.0 V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ID - Drain Current - A ID - Drain Current - A -1 Tch = 125C 75C 25C -25C - 10 -8 -6 -4 -2 -2.5 V - 0.1 Pulsed - 0.01 0 -1 -2 -3 0 0 - 0.5 -1 - 1.5 -2 - 2.5 -3 VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S VDS = -10 V Pulsed VDS - Drain to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - m 300 250 200 150 100 - 1 .5 A 50 P u ls e d 0 0 -2 -4 -6 -8 - 10 - 12 100 ID = - 3 A 10 1 Tch = 125C 75C 25C -25C 0.1 - 0.01 - 0.1 -1 - 10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 300 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE - 1.4 - 1.2 VGS(off) - Gate Cut-off Voltage - V RDS(on) - Drain to Source On-state Resistance - m 250 200 150 100 50 0 - 0 .1 V G S = - 2 .5 V - 4 .0 V - 4 .5 V P u ls e d -1 - 10 - 100 -1 - 0.8 - 0.6 - 0.4 - 0.2 0 -50 0 50 100 150 VDS = -10 V ID = -1 m A ID - Drain Current - A Tch - Channel Temperature - C DataSheet G16059EJ1V0DS 9 PA1793 ) P-Channel DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - m 200 - 100 SOURCE TO DRAIN DIODE FORWARD VOLTAGE IF - Diode Forward Current - A 150 V G S = - 2 .5 V - 4 .0 V - 10 VGS = -4.5 V -1 0V - 0.1 100 - 4 .5 V 50 P u ls e d 0 -5 0 0 50 100 150 - 0.01 0 0.5 Pulsed 1 Tch - Channel Temperature - C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 10 00 0 VF(S-D) - Source to Drain Voltage - V SWITCHING CHARACTERISTICS Ciss td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF V D D = -1 0 V V G S = -4 V R G = 10 10 00 td(off) tf tr 10 0 td(on) 100 C oss C rss VGS = 0 V f = 1 M Hz 10 - 0.1 -1 - 10 - 100 10 - 0.1 -1 - 10 - 10 0 VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 100 - 20 ID - Drain Current - A DYNAMIC INPUT/OUTPUT CHARACTERITICS -5 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns - 16 -4 - 12 VGS -8 -3 10 -2 di/dt = 10 A/s VGS = 0 V 1 - 0.1 -4 VDS -1 0 -1 - 10 - 100 0 1 2 3 4 0 IF - Diode Forward Current - A QG - Gate Charge - nC 10 DataSheet G16059EJ1V0DS VGS - Gate to Source Voltage - V VDD = 16 V 10 V 4V ID = 3 A PA1793 [MEMO] DataSheet G16059EJ1V0DS 11 |
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