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PD -91599A
IRG4BC20KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
* Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V * Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation * IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations * Industry standard TO-220AB package
C
Short Circuit Rated UltraFast IGBT
VCES = 600V
G E
VCE(on) typ. = 2.27V
@VGE = 15V, IC = 9.0A
n-ch an nel
Benefits
* Latest generation 4 IGBTs offer highest power density motor controls possible * HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses * This part replaces the IRGBC20KD2 and IRGBC20MD2 products * For hints see design tip 97003
TO-220AB
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM tsc VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
Max.
600 16 9.0 32 32 7.0 32 10 20 60 24 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Units
V
A
s V W
C
Thermal Resistance
Parameter
RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
--- --- --- --- ---
Typ.
--- --- 0.50 --- 2 (0.07)
Max.
2.1 3.5 --- 80 ---
Units
C/W
g (oz)
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4/24/2000
IRG4BC20KD
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th) VGE(th)/TJ gfe ICES VFM IGES
Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown VoltageS 600 -- -- V Temperature Coeff. of Breakdown Voltage -- 0.49 -- V/C Collector-to-Emitter Saturation Voltage -- 2.27 2.8 -- 3.01 -- V -- 2.43 -- Gate Threshold Voltage 3.0 -- 6.0 Temperature Coeff. of Threshold Voltage -- -10 -- mV/C Forward Transconductance T 2.9 4.3 -- S Zero Gate Voltage Collector Current -- -- 250 A -- -- 1000 Diode Forward Voltage Drop -- 1.4 1.7 V -- 1.3 1.6 Gate-to-Emitter Leakage Current -- -- 100 nA
Conditions VGE = 0V, IC = 250A VGE = 0V, IC = 1.0mA IC = 9.0A VGE = 15V See Fig. 2, 5 IC = 16A IC = 9.0A, TJ = 150C VCE = VGE, IC = 250A VCE = VGE, IC = 250A VCE = 100V, IC = 9.0A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150C IC = 8.0A See Fig. 13 IC = 8.0A, TJ = 150C VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- -- -- -- -- -- -- -- 10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 34 51 IC = 9.0A 4.9 7.4 nC VCC = 400V See Fig.8 14 21 VGE = 15V 54 -- 34 -- TJ = 25C ns 180 270 IC = 9.0A, VCC = 480V 72 110 VGE = 15V, RG = 50 0.34 -- Energy losses include "tail" 0.30 -- mJ and diode reverse recovery 0.64 0.96 See Fig. 9,10,14 -- -- s VCC = 360V, TJ = 125C VGE = 15V, RG = 50 , VCPK < 500V 51 -- TJ = 150C, See Fig. 11,14 37 -- IC = 9.0A, VCC = 480V ns 220 -- VGE = 15V, RG = 50 160 -- Energy losses include "tail" 0.85 -- mJ and diode reverse recovery 7.5 -- nH Measured 5mm from package 450 -- VGE = 0V 61 -- pF VCC = 30V See Fig. 7 14 -- = 1.0MHz 37 55 ns TJ = 25C See Fig. 55 90 TJ = 125C 14 IF = 8.0A 3.5 5.0 A TJ = 25C See Fig. 4.5 8.0 TJ = 125C 15 VR = 200V 65 138 nC TJ = 25C See Fig. 124 360 TJ = 125C 16 di/dt = 200As 240 -- A/s TJ = 25C See Fig. 210 -- TJ = 125C 17
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IRG4BC20KD
10
For both:
8
LOAD CURRENT (A)
D uty cy cle: 50% TJ = 125C T s ink = 90C G ate drive as specified
P ow e r Dis sip ation = 13 W S q u a re w a v e : 6 0% of rate d volta ge
6
4
I
2
Id e a l d io d e s
0 0.1 1 10 100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
TJ = 25 o C TJ = 150 o C
10
I C , Collector-to-Emitter Current (A)
I C, Collector-to-Emitter Current (A)
10
TJ = 150 o C
TJ = 25 oC V = 50V 5s PULSE WIDTH
CC 5 10 15 20
1 1
V = 15V 20s PULSE WIDTH
GE 10
1
VCE , Collector-to-Emitter Voltage (V)
VGE , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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IRG4BC20KD
20 5.0
VCE , Collector-to-Emitter Voltage(V)
V = 15V 80 us PULSE WIDTH
GE
Maximum DC Collector Current(A)
15
4.0
IC = 18 A
10
3.0
IC = 9.0A 9A
2.0
5
IC = 4.5 A
0 25 50 75 100 125 150
1.0 -60 -40 -20
0
20
40
60
80 100 120 140 160
TC , Case Temperature ( C)
TJ , Junction Temperature ( C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10 0.05
0.1
0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1 0.001 0.01
P DM t1 t2 1
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG4BC20KD
800
VGE , Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
600
VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc
20
VCC = 400V I C = 9.0A
16
Cies
400
12
8
200
C oes C res
4
0 1 10 100
0 0 10 20 30 40
VCE , Collector-to-Emitter Voltage (V)
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
0.8
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
10
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V CC = 480V V GE = 15V TJ = 25 C I C = 9.0A
RG 50 = Ohm VGE = 15V VCC = 480V
IC = 18 A
0.7
1
IC = 9.0A 9A IC = 4.5 A
0.6
0.5 0 10 20 30 40 50
0.1 -60 -40 -20
0
20
40
60
80 100 120 140 160
RG , Gate Resistance ( ) RG , Gate Resistance (Ohm)
TJ , Junction Temperature ( C )
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
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IRG4BC20KD
3.0
2.0
I C, Collector-to-Emitter Current (A)
8 12 16 20
Total Switching Losses (mJ)
RG TJ VCC VGE
= 50 Ohm = 150 C = 480V = 15V
100
VGE = 20V T J = 125 o C
10
1.0
0.0 0 4
SAFE OPERATING AREA
1 1 10 100 1000
I C , Collector-to-emitter Current (A)
VCE, Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
Instantan eou s Forwa rd C urre nt - I F (A )
10
TJ = 15 0C TJ = 12 5C TJ = 2 5C
1
0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
Fo rwa rd V oltage D rop - V FM (V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
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IRG4BC20KD
100 100
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
80
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
IF = 16 A
t rr - (ns)
60
I F = 8 .0A
I IR R M - (A )
I F = 1 6A
10
40
IF = 8 .0 A I F = 4.0 A
I F = 4 .0 A
20
0 100
d i f /d t - (A / s)
1000
1 100
1000
di f /dt - (A /s)
Fig. 14 - Typical Reverse Recovery vs. dif/dt
500
Fig. 15 - Typical Recovery Current vs. dif/dt
10000
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
400
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
300
d i(re c)M /d t - (A /s)
Q R R - (n C )
I F = 16 A
200
I F = 4 .0A
1000
I F = 8.0 A I F = 16 A
I F = 8 .0A
100
IF = 4.0 A
0 100 100 100
di f /dt - (A /s)
1000
1000
di f /dt - (A /s)
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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IRG4BC20KD
Same ty pe device as D .U.T. 90% Vge +Vge
V ce 80% of Vce 430F D .U .T. Ic 10% Vce Ic 5 % Ic td (o ff) tf 9 0 % Ic
Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
E o ff =
t1 + 5 S V c e Ic Vceic d tdt t1
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg
trr Ic
Q rr =
trr id ddt Ic t tx
tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic
1 0 % Irr V cc
V pk Irr
D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 Vce d E o n = V ce ieIc t dt t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4
E re c =
t4 V d idIc t dt Vd d t3
t1
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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IRG4BC20KD
V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T .
V O L T A G E IN D .U .T .
C U R R E N T IN D 1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
L 1000V 50V 6000 F 100 V Vc*
D.U.T.
RL= 0 - 480V
480V 4 X IC @25C
Figure 19. Clamped Inductive Load Test Circuit
Figure 20. Pulsed Collector Current Test Circuit
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IRG4BC20KD
Notes:
Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10H, RG= 50 (figure 19) S Pulse width 80s; duty factor 0.1%. T Pulse width 5.0s, single shot.
Case Outline TO-220AB
1 0 .5 4 (.41 5 ) 1 0 .2 9 (.40 5 )
2 .8 7 (.1 1 3 ) 2 .6 2 (.1 0 3 )
3.78 (.149) 3.54 (.139) -A6.47 (.255 ) 6.10 (.240 ) 1.15 (.045) M IN
-B -
4.69 (.185) 4.20 (.165)
1.32 (.052) 1.22 (.048)
4 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 ) 1 2 3
N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 14 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M ILL IM E T E R S (IN C H E S ). 4 C O N F O R M S T O JE D E C O U T L IN E T O -2 2 0 A B .
3X
1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 )
3.96 (.160) 3.55 (.140)
LEAD 1234-
A S S IG N M E N T S GA TE C O L LE C T O R E M IT T E R C O L LE C T O R
4.06 (.160 ) 3.55 (.140 )
0.93 (.037) 0.69 (.027)
MBAM
1 .4 0 (.0 5 5 ) 3 X 1 .1 5 (.0 4 5 ) 2 .5 4 (.1 0 0) 2X
3X
3X
0.55 (.022) 0.46 (.018)
0 .3 6 (.01 4 )
2.92 (.115) 2.64 (.104)
CONFORMS TO JEDEC OUTLINE TO-220AB
D im e ns io ns in M illim e ters a nd (In c he s )
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 10/00
10
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