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| Power Transistors 2SC5912 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV 15.50.5 (10.0) Unit: mm 3.20.1 5 (4.5) 3.00.3 5 Features * High breakdown voltage: VCBO 1 500 V * Wide safe operation area * Built-in dumper diode 26.50.5 (23.4) (2.0) 5 (4.0) 2.00.2 1.10.1 0.70.1 5.450.3 10.90.5 5.50.3 5 5 Absolute Maximum Ratings TC = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Emitter-base voltage (Collector open) Base current Collector current Peak collector current * Collector power dissipation Ta = 25C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCES VEBO IB IC ICP PC Rating 1 500 1 500 7 3 10 15 40 3 150 -55 to +150 C C Unit V V V A A A W 3.30.3 18.60.5 (2.0) Solder Dip 5 1 2 3 (2.0) 1: Base 2: Collector 3: Emitter EIAJ: SC-94 TOP-3E-A1 Package Internal Connection C B E Note) *: Non-repetitive peak collector current Electrical Characteristics TC = 25C 3C Parameter Emitter-base voltage (Collector open) Forward voltage Collector-base cutoff current (Emitter open) Symbol VEBO VF ICBO hFE VCE(sat) VBE(sat) fT tstg tf IF = 5 A VCB = 1 000 V, IE = 0 VCB = 1 500 V, IE = 0 Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Storage time Fall time VCE = 5 V, IC = 5 A IC = 5 A, IB = 1.25 A IC = 5 A, IB = 1.25 A VCE = 10 V, IC = 0.1 A, f = 0.5 MHz IC = 5 A, Resistance loaded IB1 = 1.25 A, IB2 = -2.5 A 3 5.0 0.5 5 Conditions IE = 500 mA, IC = 0 Min 7 -2 50 1 10 2.5 1.5 Typ Max Unit V V A mA V V MHz s s Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 22.00.5 (1.2) Publication date: March 2004 SJD00308AED 1 2SC5912 PC Ta 80 70 60 50 40 (1) 30 20 10 (3) 0 0 25 50 75 100 125 150 10-3 1 10 100 1 000 Safe operation area 100 ICP 10 IC DC 1 Non repetitive pulse TC = 25C t = 100 s Safe operation area (Horizontal operation) 20 fH = 15.75 kHz, TC < 90C A.S.O for a single pulse load caused by EHT flash over during horizontal operation. One action of the device must not use in all areas. (area A, B and C) But it is able to use in two areas. (area A and B or area B and C) Collector power dissipation PC (W) (1) TC = Ta (2) With a 100 x 100 x 2 mm Al heat sink (3) Without heat sink Collector current IC (A) Collector current IC (A) t= t= 10 ms 1 ms 15 10 A 10-1 10-2 5 (2) B 0 0 500 C < 1 mA 1 000 1 500 2 000 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 2 SJD00308AED |
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