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| SEMICONDUCTOR RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs Packages JEDEC STYLE TO-247 SOURCE DRAIN GATE December 1995 Features * 60A, 30V * rDS(ON) = 0.027 * Temperature Compensating PSPICE Model * Peak Current vs Pulse Width Curve * UIS Rating Curve * +175oC Operating Temperature DRAIN (BOTTOM SIDE METAL) Description The RFG60P03, RFP60P03, RF1S60P03 and RF1S60P03SM P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. PACKAGE AVAILABILITY PART NUMBER RFG60P03 RFP60P03 RF1S60P03 RF1S60P03SM PACKAGE TO-247 TO-220AB TO-262AA TO-263AB JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) BRAND RFG60P03 RFP60P03 F1S60P03 F1S60P03 DRAIN (FLANGE) A JEDEC TO-262AA SOURCE DRAIN GATE NOTE: When ordering use the entire part number. Formerly developmental type TA49045. Symbol D JEDEC TO-263AB M A A G GATE SOURCE S DRAIN (FLANGE) Absolute Maximum Ratings TC = +25oC RFG60P03, RFP60P03, RF1S60P03, RFS60P03SM -30 -30 20 60 Refer to Peak Current Curve Refer to UIS Curve 176 1.17 -55 to +175 UNITS V V V A Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Power Dissipation TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PT Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ , TSTG W W/oC oC CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures. Copyright (c) Harris Corporation 1995 File Number 3951.1 4-51 Specifications RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM Electrical Specifications PARAMETERS Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current TC = +25oC, Unless Otherwise Specified. SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0V VGS = VDS, ID = 250A VDS = -30V, VGS = 0V VGS = 20V ID = 60A, VGS = -10V VDD = -15V, ID = 60A RL = 0.25, VGS = -10V RGS = 2.5 TC = +25oC TC = +150oC MIN -30 -2 VGS = 0 to -20V VGS = 0 to -10V VGS = 0 to -2V VDS = -25V, VGS = 0V f = 1MHz VDD = -24V, ID = 60A, RL = 0.4 TYP 20 75 35 40 190 100 7.5 3000 1500 525 MAX -4 -1 -50 100 0.027 140 115 230 120 9 0.85 80 UNITS V V A A nA ns ns ns ns ns ns nC nC nC pF pF pF oC/W oC/W Gate-Source Leakage Current On Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 10V Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient IGSS rDS(ON) tON tD(ON) tR tD(OFF) tF tOFF QG(TOT) QG(-10) QG(TH) CISS COSS CRSS RJC RJA Source-Drain Diode Ratings and Specifications PARAMETERS Forward Voltage Reverse Recovery Time SYMBOL VSD tRR TEST CONDITIONS ISD = -60A ISD = -60A, dISD/dt = -100A/s MIN TYP MAX -1.75 200 UNITS V ns 4-52 RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM Typical Performance Curves TC = +25oC 10 -500 ID , DRAIN CURRENT (A) -100 1ms ZJC, NORMALIZED THERMAL RESPONSE 100s 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM 10ms -10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) -1 -1 100ms DC t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 10-2 10-1 100 101 VDSS MAX = -30V -60 0.01 10-5 SINGLE PULSE 10-4 10-3 -10 VDS , DRAIN-TO-SOURCE VOLTAGE (V) t , RECTANGULAR PULSE DURATION (s) FIGURE 1. SAFE OPERATING AREA CURVE FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE -70 IDM , PEAK CURRENT CAPABILITY (A) -103 -60 ID , DRAIN CURRENT (A) -50 -40 -30 -20 -10 0 25 50 75 100 125 (oC) 150 175 TC , CASE TEMPERATURE TC = +25oC FOR TEMPERATURES ABOVE +25oC DERATE PEAK CURRENT CAPABILITY AS FOLLOWS: VGS = -20V I=I 175 - T C 25 ----------------------- 150 VGS = -10V -102 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 10-6 10-5 10-4 10-3 10-2 10-1 t , PULSE WIDTH (ms) 100 101 -50 FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE FIGURE 4. PEAK CURRENT CAPABILITY ID(ON), ON STATE DRAIN CURRENT (A) PULSE DURATION = 250s, TC = +25oC -120 ID, DRAIN CURRENT (A) VGS = -20V VGS = -10V VGS = -8V VDD = -15V -120 PULSE TEST PULSE DURATION = 250s DUTY CYCLE = 0.5% MAX -55 C +25oC o -90 -90 +175oC -60 -60 VGS = -7V -30 VGS = -4.5V 0 0.0 -1.5 -3.0 -4.5 VGS = -6V VGS = -5V -6.0 -7.5 -30 0 0.0 -2.0 -4.0 -6.0 -8.0 -10.0 VDS , DRAIN-TO-SOURCE VOLTAGE (V) VGS , GATE-TO-SOURCE VOLTAGE (V) FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS 4-53 RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM Typical Performance Curves (Continued) PULSE DURATION = 250s, VGS = -10V, ID = -60A rDS(ON) , NORMALIZED ON RESISTANCE 2.0 VGS(TH) , NORMALIZED GATE THRESHOLD VOLTAGE 2.0 VGS = VDS, ID = - 250A 1.5 1.5 1.0 1.0 0.5 0.5 0.0 -80 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) 200 0.0 -80 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) 200 FIGURE 7. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE ID = -250A FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs TEMPERATURE 1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) 150 175 BVDSS , NORMALIZED DRAIN-TO-SOURCE BREAKDOWN VOLTAGE 2.0 1.5 1.0 0.5 0.0 -80 -40 0 40 80 120 160 200 TJ , JUNCTION TEMPERATURE (oC) FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE vs TEMPERATURE VGS = 0V, f = 1MHz VDS , DRAIN-SOURCE VOLTAGE (V) 5000 FIGURE 10. NORMALIZED SWITCHING WAVEFORMS -30.0 VDD = BVDSS -22.5 RL = 0.5 IG(REF) = -3mA VGS = -10V 0.75 BVDSS 0.75 BV 0.50 BVDSS -7.5 0.25 BVDSS VDD = BVDSS -10.0 VGS , GATE-SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 4000 CISS 3000 COSS 2000 CRSS -7.5 -15.0 -5.0 DSS 0.50 BVDSS 0.25 BVDSS -2.5 1000 0 0 -5 -10 -15 -20 VDS , DRAIN-TO-SOURCE VOLTAGE (V) -25 0.0 20 IG(REF) IG(ACT) t, TIME (s) 80 IG(REF) IG(ACT) 0.0 FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT. REFER TO APPLICATION NOTE AN7254 AND AN7260 4-54 RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM Typical Performance Curves -200 IAS , AVALANCHE CURRENT (A) STARTING TJ = +25oC -100 (Continued) STARTING TJ = +150oC If R = 0 tAV = (L) (IAS) / (1.3RATED BVDSS - VDD) If R 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] -10 0.01 0.1 1 tAV , TIME IN AVALANCHE (ms) 10 FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING Test Circuits and Waveforms VDS L VARY tP TO OBTAIN REQUIRED PEAK IAS 0V tP VGS IAS RG DUT tP BVDSS VDS VDD VDD + IL 0.01 tAV FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS tON VDD tD(ON) tR RL VDS 90% DUT VGS 10% VGS RGS 50% PULSE WIDTH VDS 10% tOFF tD(OFF) tF 10% 0V 90% 50% 90% FIGURE 16. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS 4-55 RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM Temperature Compensated PSPICE Model for the RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM .SUBCKT RFP60P03 2 1 3 CA 12 8 5.01e-9 CB 15 14 3.9e-9 CIN 6 8 3.09e-9 DBODY 5 7 DBDMOD DBREAK 7 11 DBKMOD DPLCAP 10 6 DPLCAPMOD 10 REV 6/21/94 ESG + EBREAK 5 11 17 18 -36.59 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 5 10 8 6 1 EVTO 20 6 8 18 1 GATE RGATE 9 - 8 6 + 5 RDRAIN DRAIN 2 LDRAIN + 17 18 DPLCAP VTO 16 EBREAK MOS2 21 6 RIN CIN 8 S1A 12 13 8 S1B CA + 6 EGS -8 13 S2A 14 13 S2B CB 14 + 5 EDS -8 15 17 MOS1 11 DBREAK RSOURCE 1 LGATE EVTO 18 20 8 + - DBODY IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 4.92e-9 LSOURCE 3 7 2.36e-9 MOS1 16 6 8 8 MOSMOD M=0.99 MOS2 16 21 8 8 MOSMOD M=0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 5 16 RDSMOD 1e-4 RGATE 9 20 3.25 RIN 6 8 1e9 RSOURCE 8 7 RDSMOD 11.28e-3 RVTO 18 19 RVTOMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 -0.92 7 LSOURCE 3 SOURCE 18 RBREAK RVTO IT 19 VBAT + .MODEL DBDMOD D (IS=4.21e-13 RS=1e-2 TRS1=-2.69e-4 TRS2=-1.33e-6 CJO=5.05e-9 TT=5.33e-8) .MODEL DBKMOD D (RS=3.80e-2 TRS1=-4.76e-4 TRS2=-4.17e-12) .MODEL DPLCAPMOD D (CJO=4.05e-9 IS=1e-30 N=10) .MODEL MOSMOD PMOS (VTO=-3.98 KP=16.27 IS=1e-30 N=10 TOX=1 L=1u W=1u) .MODEL RBKMOD RES (TC1=8.05e-4 TC2=1.48e-6) .MODEL RDSMOD RES (TC1=2.80e-3 TC2=2.62e-6) .MODEL RVTOMOD RES (TC1=-3.34e-3 TC2=1.46e-6) .MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=7.5 VOFF=4.5) .MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=4.5 VOFF=7.5) .MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.43 VOFF=-3.57) .MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.57 VOFF=1.43) .ENDS NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options; authors, William J. Hepp and C. Frank Wheatley. 4-56 |
Price & Availability of RFP60P03
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