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| 2SK3543 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3543 Switching Regulator and DC-DC Converter Applications Motor Drive Applications * * * * Low drain-source ON resistance: RDS (ON) = 1.9 (typ.) High forward transfer admittance: |Yfs| = 1.3 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 30 2 5 30 103 2 3 150 -55 to150 Unit V V V A W mJ A mJ C C Pulse (Note 1) Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA SC-67 2-10R1B Weight: 1.9 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 4.17 62.5 Unit C/W C/W Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 42.8 mH, RG = 25 W, IAR = 2 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-09-04 2SK3543 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd VDD ~ 360 V, VGS = 10 V, ID = 2 A Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) iYfsi Ciss Crss Coss tr ton 10 V VGS 0V 50 9 ID = 1 A VOUT VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 mA, VDS = 0 V VDS = 450 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 1 A VDS = 10 V, ID = 1 A Min 3/4 30 3/4 450 2.0 3/4 0.6 3/4 3/4 3/4 3/4 3/4 3/4 VDD ~ 200 V 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 1.9 1.3 380 40 120 15 25 20 80 9 5 4 Max 10 3/4 100 3/4 4.0 2.45 3/4 3/4 3/4 3/4 3/4 3/4 ns 3/4 3/4 3/4 3/4 3/4 nC pF Unit mA V mA V V W S RL = 200 W Duty < 1%, tw = 10 ms = Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition 3/4 3/4 IDR = 2 A, VGS = 0 V IDR = 2 A, VGS = 0 V, dIDR/dt = 100 A/ms Min 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 1000 3.5 Max 2 5 -1.5 3/4 3/4 Unit A A V ns mC Marking K3543 Lot Number Type Month (starting from alphabet A) Year (last number of the christian era) 2 2002-09-04 2SK3543 ID - VDS 2.0 Common source Tc = 25C pulse test 5 10 6.0 5.25 4 10 ID - VDS 8.0 6.0 Common source Tc = 25C pulse test 1.6 (A) (A) 8.0 5.0 5.75 3 5.5 5.25 2 5.0 4.75 1 VGS = 4.25 V 0 ID 1.2 4.75 0.8 Drain current 4.5 4.25 0.4 VGS = 4.0 V 0 0 2 4 6 8 10 0 10 20 30 Drain current ID 40 50 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 5 Common source VDS = 20 V pulse test 10 VDS - VGS Common source Tc = 25C pulse test 4 (V) 8 (A) ID Drain-source voltage 3 VDS 6 ID = 2.0 A 4 1.0 2 0.5 0 2 100 1 25 Tc = -55C 0 0 2 4 6 8 Drain current 10 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) iYfsi - ID 10 RDS (ON) - ID 30 Common source Tc = 25C (S) Common source pulse test iYfsi Drain-source on resistance RDS (ON) (W) 5 3 VDS = 20 V Pulse test 10 Forward transfer admittance Tc = -55C 100 1 25 5 3 VGS = 10, 15 V 0.5 0.3 0.2 0.1 0.3 0.5 1 3 5 10 1 0.5 0.1 0.3 0.5 1 3 5 10 Drain current ID (A) Drain current ID (A) 3 2002-09-04 2SK3543 RDS (ON) - Tc (W) 10 Common source VGS = 10 V pulse test 10 Common source VGS = 10 V 3 pulse test 1 IDR - VDS RDS (ON) 8 Drain-source on resistance 6 ID = 2 A 4 1.0 Drain reverse current IDR (A) 0.5 0.3 10 3 0.03 1 VGS = 0, -1 V 0.1 2 0 -80 -40 0 40 80 160 0.01 0 -0.2 -0.4 -0.6 -0.8 -1.0 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 1000 Ciss 5 500 300 Vth - Tc Common source VDS = 10 V ID = 1 mA pulse test Gate threshold voltage Vth (V) 4 (pF) Capacitance C 100 50 30 Coss 3 2 10 Common source 5 VGS = 0 V f = 1 MHz Tc = 25C 2 0.1 0.3 0.5 1 Crss 1 3 5 10 30 50 100 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 50 500 Dynamic input/output characteristics Common source ID = 2 A Tc = 25C pulse test VDS 300 90 200 VDS = 360 V VGS 8 180 12 20 (W) (V) 40 400 16 PD VDS Drain power dissipation Drain-source voltage 20 10 100 4 0 0 40 80 120 160 200 0 0 2 4 6 8 10 12 0 14 Case temperature Tc (C) Total gate charge Qg (nC) 4 2002-09-04 Gate-source voltage 30 VGS (V) 2SK3543 rth - tw Normalized transient thermal impedance rth (t)/Rth (ch-a) 3 1 Duty = 0.5 0.3 0.2 0.1 0.05 0.02 0.03 0.01 0.01 Single Pulse PDM t T Duty = t/T Rth (ch-c) = 4.17C/W 0.003 10 m 100 m 1m 10 m 100 m 1 10 0.1 Pulse width tw (S) Safe operating area 10 ID max (pulsed) * 3 ID max (continuous) 100 ms * 200 EAS - Tch (mJ) Avalanche energy EAS 160 1 ms * 1 (A) 120 0.3 DC operation Tc = 25C ID Drain current 80 0.1 *: Single nonrepetitive pulse Tc = 25C 0.03 Curves must be derated linearly with increase in temperature. 0.01 1 10 40 VDSS max 100 1000 0 25 50 75 100 125 150 Channel temperature (initial) Tch (C) Drain-source voltage VDS (V) 15 V -15 V BVDSS IAR VDD VDS Test circuit RG = 25 W VDD = 90 V, L = 42.8 mH AS = Wave form ae o 1 B VDSS / x L x I2 x c cB 2 - VDD / e VDSS o 5 2002-09-04 2SK3543 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-09-04 |
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