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| 580 Pleasant St. Watertown, MA 02172 PH: (617) 926-0404 FAX: (617) 924-1235 2N2222A Features * * * * Meets MIL 19500 /255 Collector - Base Voltage 75 V Collector - Current 800 mA High Speed, Medium Current Bipolar Transistor SWITCHING TRANSISTOR JAN, JANTX, JANTXV SMALL SIGNAL BIPOLAR NPN SILICON TO-18 COLLECTOR BASE EMITTER Maximum Ratings RATING Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25 C Derate above 25 C Total Device Dissipation @ TC = 25 C Derate above 25 C Operating Junction&Storage Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD TJ, Tstg VALUE 50 75 6 800 500 2.85 1.8 10.3 - 65 to + 200 UNIT Vdc Vdc Vdc mAdc mW mW/ C WATTS mW/ C C Thermal Characteristics CHARACTERISTIC Thermal Resistance, Junction to Ambient SYMBOL R JA MAX 350 UNIT C/W MSCO275A 01-29-98 DSW2N2222A < - > ( 33807) 2N2222A Electrical Characteristics (TA = 25 unless otherwise noted) C OFF CHARACTERISTIC Collector - Emitter Breakdown Voltage (1) ( IC = 10 mA dc, IB = 0 ) Collector - Base Breakdown Voltage (1) ( IC = 10 Adc, IE = 0 ) Emitter - Base Breakdown Voltage (1) ( IE = 10 Adc, IC = 0 ) Collector - Emitter Cutoff Current ( VCE = 50 Vdc, VBE(off) = 0 V ) Collector - Base Cutoff Current ( VCB = 60 Vdc, IE = 0 ) ( VCB = 60 Vdc, IE = 0, TA = 150 ) C Emitter - Base Cutoff Current ( VEB = 4 Vdc ) ON CHARACTERISTIC DC Current Gain ( IC = 100 A dc, VCE = 10 Vdc ) ( IC = 1 mA dc, VCE = 10 Vdc ) ( IC = 10 mA dc, VCE = 10 Vdc ) ( IC = 150 mA dc, VCE = 10 Vdc ) (1) ( IC = 500 mA dc, VCE = 10 Vdc ) (1) ( IC = 10 mA dc, VCE = 10 Vdc, TJ = -55 ) C Collector - Emitter Saturation Voltage ( IC = 150 mAdc, IB = 15 mAdc ) (1) ( IC = 500 mAdc, IB = 50 mAdc ) (1) Base - Emitter Saturation Voltage ( IC = 150 mAdc, IB = 15 mAdc ) (1) ( IC = 500 mAdc, IB = 50 mAdc ) (1) SYMBOL V(BR)CEO V(BR)CBO 75 V(BR)EBO 6 ICES 50 ICBO 10 10 IEBO 10 SYMBOL hFE MIN 50 75 100 100 30 35 VCE(sat) 0.3 1.0 VBE(sat) 0.6 1.2 2.0 Vdc Vdc Vdc Vdc MAX nAdc UNIT nAdc Adc nAdc Vdc Vdc MIN 50 MAX UNIT Vdc 325 300 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% MSCO275A 01-29-98 DSW2N2222A < - > ( 33807) 2N2222A Electrical Characteristics (TA = 25 unless otherwise noted) C SMALL - SIGNAL CHARACTERISTICS Output Capacitance ( VCB = 10 Vdc, IE = 0, 100kHz f 1 MHz ) Input Capacitance ( VEB = 0.5 Vdc, IC = 0, 100kHz f 1 MHz ) SWITCHING CHARACTERISTICS Turn - On Time ( VCC = 30 Vdc, IC = 150 mAdc, IB1 =15 mAdc) ( See FIGURE 1 ) Turn - Off Time ( VCC = 30 Vdc, IC = 150 mAdc, IB1 = - IB2 = 15 mAdc) ( See FIGURE 2 ) SYMBOL Cobo Cibo 25 SYMBOL ton MIN MAX pF UNIT MIN MAX 8 UNIT pF 35 toff 300 ns ns Small - Signal AC Characteristics (TA = 25 C) LOW FREQUENCY Common - Emitter Forward Current Transfer Ratio (IC = 1 mA, VCE = 10 V, f = 1kHz) HIGH FREQUENCY Common - Emitter Forward Current Transfer Ratio (IC = 20 mA, VCE = 20 V, f = 100 MHz) SYMBOL hfe MIN 50 |hfe| 2.5 *1 MAX UNIT Spice Model (based upon typical device characteristics) EG = 1.11 NK = 0.3052 RC = 0.3567 VJE = 0.9036 VTF=10 ) Q2N2222A NPN ( IS = 19.34n XT = 3.0 + NE = 1.647 IKF = 3.0 + NC = 1.88 IKR = 10.75 + FC = 0.5 CJE = 29.31p + ITF = 5.282 XTF = 249.9 VAF=250.3 XTB = 1.5 CJC = 11.02p MJE = 0.4101 BF = 163.8 BR = 11.49 VJC = 0.3869 TR = 38.32n ISE =174.3f ISC = 19.9f MJC = 0.3292 TF =361.8p *1. Microsemi Corp. claims no responsibility for misapplication of Spice Model information. Spice modeling should be used as a precursor guide to in-circuit performance. Actual performance is the responsibility of the user/designer. MSCO275A 01-29-98 DSW2N2222A < - > ( 33807) 2N2222A L TO 18 CASE OUTLINE 19.8 MIL TYP SQUARE DIE CHARACTERISTICS Back is Collector Chip Thickness is: 10 MILS TYP (E) (B) Metalization is: Top = Al, Back = Au DIE OUTLINE MSC0275A 11-10-97 DSW2N2222A < - > ( 33807) 2N2222A FIGURE 1 Saturated Turn-on Time Test Circuit FIGURE 2 Saturated Turn-off Time Test Circuit MSC0275A 11-10-97 DSW2N2222A < - > ( 33807) 2N2222A DC CURRENT GAIN TJ = 25 C VCE = 10 V 250 250 hFE CURRENT GAIN 200 typ 150 200 150 100 100 50 50 0 -4 10 -3 10 -2 10 -1 10 0 10 0 IC COLLECTOR CURRENT (A) FIGURE 3 COLLECTOR SATURATION vs BASE CURRENT TJ = 25 C VCE, COLLECTOR-EMITTER (V) 1.0 1.0 0.8 IC = 10 mA 0.6 IC = 150 mA 0.4 IC = 500 mA 0.2 0.8 0.6 0.4 0.2 0.0 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 0.0 IB, BASE CURRENT (A) FIGURE 4 MSC0275A 11-10-97 DSW2N2222A < - > ( 33807) 2N2222A BASE SATURATION vs BASE CURRENT TJ = 25 C 1.2 1.2 1.1 IC = 500 mA 1.0 0.9 0.8 IC = 10 mA 0.7 0.6 0.5 -4 10 -3 10 -2 10 -1 10 0 10 VBE, BASE-EMITTER (V) 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -5 10 IC = 150 mA IB, BASE CURRENT (A) FIGURE 5 JUNCTION CAPACITANCE TJ = 25 C 100 kHz < f < 1 MHz JUNCTION CAPACITANCE (pF) 30 25 CIBO 20 15 10 COBO 5 0 .1 1 10 100 REVERSE JUNCTION VOLTAGE (V) FIGURE 6 MSC0275A 11-10-97 DSW2N2222A < - > ( 33807) 2N2222A SMALL SIGNAL CURRENT GAIN, hfe SMALL SIGNAL CURENT GAIN vs COLLECTOR CURRENT TJ = 25 C VCE = 10 V f = 1kHz 250 250 200 typ. 200 150 150 100 .1 1 10 100 100 COLLECTOR CURRENT (mA) FIGURE 7 HIGH FREQUENCY GAIN TJ = 25 C VCE = 20 V f = 100 MHz HIGH FREQUENCY GAIN | hfe | 5 5 4 4 3 typ. 2 3 2 1 1 0 1 10 0 100 COLLECTOR CURRENT (mA) FIGURE 8 MSC0275A 11-10-97 DSW2N2222A < - > ( 33807) 2N2222A GAIN vs FREQUENCY TJ = 25 C IC = 20 mA VCE = 20 V HIGH FREQUENCY GAIN | hfe | 40 40 30 30 20 20 10 typ. 10 0 10 100 0 1000 FREQUENCY (MHz) FIGURE 9 MSC0275A 11-10-97 DSW2N2222A < - > ( 33807) |
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