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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 IXFH13 N90 900 V 900 V 900 V ID25 10 A 12 A 13 A RDS(on) 1.1 W 0.9 W 0.8 W trr 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C 10N90 12N90 13N90 10N90 12N90 13N90 10N90 12N90 13N90 Maximum Ratings 900 900 20 30 10 12 13 40 48 13 10 12 13 30 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A A A A A A A mJ V/ns W C C C C TO-247 AD (IXFH) (TAB) TO-204 AA (IXFM) EAR dv/dt PD TJ TJM Tstg TL Md Weight Symbol TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C D G = Gate, S = Source, D = Drain, TAB = Drain G 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier l l l l l l Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 900 2.0 V V nA mA mA W W W VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 TJ = 25C TJ = 125C 4.5 100 25 1 1.1 0.9 0.8 Applications DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays l l l l l l l l 10N90 12N90 13N90 Pulse test, t 300 ms, duty cycle d 2 % Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density l l l IXYS reserves the right to change limits, test conditions, and dimensions. 91530G (3/98) (c) 2000 IXYS All rights reserved 1-4 IXFH 10N90 IXFH 12N90 IXFH 13N90 IXFM 10N90 IXFM 12N90 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 6 12 4200 VGS = 0 V, VDS = 25 V, f = 1 MHz 315 90 18 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 2 W (External) 12 51 18 123 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 27 49 50 50 100 50 155 45 80 0.42 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. Millimeter Min. Max. A B C D E F G H 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 TO-247 AD (IXFH) Outline gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 * ID25, pulse test Source-Drain Diode Symbol IS Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 10N90 12N90 13N90 10N90 12N90 13N90 10 12 13 40 48 52 1.5 250 400 1 2 10 15 A A A A A A V ns ns mC mC A A J K L M N 1.5 2.49 TO-204 AA (IXFM) Outline ISM Repetitive; pulse width limited by TJM VSD t rr QRM IRM IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IS -di/dt = 100 A/ms, VR = 100 V TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C Dim. A B C D E F G H J K Q R Millimeter Min. Max. 38.61 39.12 19.43 19.94 6.40 9.14 0.97 1.09 1.53 2.92 30.15 BSC 10.67 11.17 5.21 5.71 16.64 17.14 11.18 12.19 3.84 4.19 25.16 25.90 Inches Min. Max. 1.520 1.540 - 0.785 0.252 0.360 0.038 0.043 0.060 0.115 1.187 BSC 0.420 0.440 0.205 0.225 0.655 0.675 0.440 0.480 0.151 0.165 0.991 1.020 (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFH 10N90 IXFH 12N90 IXFH 13N90 IXFM 10N90 IXFM 12N90 Fig. 1 Output Characteristics 20 18 16 14 12 10 8 6 4 2 0 5V Fig. 2 Input Admittance 20 18 16 6V TJ = 25C VGS = 10V 7V ID - Amperes ID - Amperes 14 12 10 8 6 4 2 0 TJ = 25C 0 5 10 15 20 0 1 2 3 4 5 6 7 8 9 10 VDS - Volts VGS - Volts Fig. 3 RDS(on) vs. Drain Current 1.5 TJ = 25C Fig. 4 Temperature Dependence of Drain to Source Resistance 2.50 2.25 1.4 RDS(on) - Normalized RDS(on) - Normalized 2.00 1.75 1.50 1.25 1.00 0.75 ID = 6A 1.3 1.2 VGS = 10V 1.1 VGS = 15V 1.0 0.9 0 5 10 15 20 25 0.50 -50 -25 0 25 50 75 100 125 150 ID - Amperes TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature 20 18 16 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.2 VGS(th) 1.1 BVDSS BV/VG(th) - Normalized 25 50 75 100 125 150 ID - Amperes 14 12 10 8 6 4 2 0 -50 1.0 0.9 0.8 0.7 0.6 12N90 10N90 -25 0 0.5 -50 -25 0 25 50 75 100 125 150 TC - Degrees C TJ - Degrees C (c) 2000 IXYS All rights reserved 3-4 IXFH 10N90 IXFH 12N90 IXFH 13N90 IXFM 10N90 IXFM 12N90 Fig.7 Gate Charge Characteristic Curve 10 8 VDS = 450V ID = 13A IG = 10mA 10s Fig.8 Forward Bias Safe Operating Area 6 4 2 0 0 25 50 75 100 125 150 ID - Amperes 10 Limited by RDS(on) 100s 1ms VGE - Volts 1 10ms 100ms 0.1 1 10 100 1000 Gate Charge - nCoulombs VDS - Volts Fig.9 Capacitance Curves 4500 4000 Ciss Fig.10Source Current vs. Source to Drain Voltage 18 16 14 Capacitance - pF 3500 f = 1 MHz VDS = 25V 2500 2000 1500 1000 500 0 0 5 Coss Crss ID - Amperes 3000 12 10 8 6 4 2 TJ = 125C TJ = 25C 10 15 20 25 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VCE - Volts VSD - Volts Fig.11 Transient Thermal Impedance 1 Thermal Response - K/W D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2000 IXYS All rights reserved 4-4 |
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