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| PD- 94101 IRF7342D2 FETKY MOSFET & Schottky Diode l l l l l TM Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier SO-8 Footprint A A S G 1 8 K K D D VDSS = -55V RDS(on) = 105m Schottky Vf = 0.61V 2 7 3 6 4 5 Description The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. T op V ie w SO-8 Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted) Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Maximum -3.4 -2.7 -27 2.0 1.3 16 20 -5.0 -55 to +150 Units A W mW/C V V/ns C Thermal Resistance Symbol RJL RJA RJA Parameter Junction-to-Drain Lead, MOSFET Junction-to-Ambient , MOSFET Junction-to-Ambient , SCHOTTKY Typ. --- --- --- Max. 20 62.5 62.5 Units C/W Notes: Repetitive rating - pulse width limited by max. junction temperature (see fig. 11) ISD -3.4A, di/dt -150A/s, VDD V(BR)DSS, TJ 150C Pulse width 400s - duty cycle 2% Surface mounted on 1 inch square copper board, t 10sec. www.irf.com 1 03/09/01 IRF7342D2 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -55 --- --- --- -1.0 3.3 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.054 95 150 --- --- --- --- --- --- 26 3.0 8.4 14 10 43 22 690 210 86 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, I D = -1mA 105 VGS = -10V, ID = -3.4A m 170 VGS = -4.5V, ID = -2.7A --- V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -3.1A -2.0 VDS = -44V, VGS = 0V A -25 VDS = -44V, VGS = 0V, TJ = 70C -100 VGS = -20V nA 100 VGS = 20V 38 ID = -3.1A 4.5 nC VDS = -44V 13 VGS = -10V, See Fig. 6 & 14 22 VDD = -28V 15 ID = -1.0A ns 64 RG = 6.0 32 VGS = -10V, --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 MOSFET Source-Drain Ratings and Characteristics IS I SM VSD t rr Q rr Parameter Min. Continuous Source Current(Body Diode) --- Pulsed Source Current (Body Diode) --- Body Diode Forward Voltage --- Reverse Recovery Time (Body Diode) --- Reverse Recovery Charge --- Parameter Max. Average Forward Current Max. peak one cycle Non-repetitive Surge current Typ. --- --- --- 54 85 Max. Units Conditions -2.0 A -27 -1.2 V TJ = 25C, IS = -2.0A, VGS = 0V 80 ns TJ = 25C, I F = -2.0A 130 nC di/dt = 100A/s Conditions 50% Duty Cycle. Rectangular Wave, TA = 57C See Fig. 21 5s sine or 3s Rect. pulse Following any rated 10ms sine or 6ms Rect. pulse load condition & with Vrrm applied Schottky Diode Maximum Ratings If (av) ISM Max. Units 3.0 A 490 70 A Schottky Diode Electrical Specifications Vfm Parameter Max. Forward Voltage Drop Max. Units 0.61 0.76 V 0.53 0.65 60 V 2.0 mA 30 145 pF Conditions If = 3.0A, Tj = 25C If = 6.0A, Tj = 25C If = 3.0A, Tj = 125C If = 6.0A, Tj = 125C Vr = 60V Tj = 25C Tj = 125C Vrrm Irm Ct Max. Working Peak Reverse Voltage Max. Reverse Leakage Current Max. Junction Capacitance Vr = 5Vdc ( 100kHz to 1 MHz) 25C 2 www.irf.com IRF7342D2 Power Mosfet Characteristics 100 VGS -15V -10V -6.0V -5.0V -4.5V -3.5V -3.0V BOTTOM -2.5V TOP 100 VGS -15V -10V - 6.0V -5.5V -4.5V -3.5V -3.0V BOTTOM - 2.5V TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) 10 10 1 1 -2.5V 20s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100 -2.5V 20s PULSE WIDTH Tj = 25C 0.1 0.1 1 10 100 -VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 ID = -3.4 A -I D , Drain-to-Source Current (A) TJ = 25 C 10 R DS(on) , Drain-to-Source On Resistance (Normalized) 1.5 TJ = 150 C 1.0 1 0.5 0.1 2.0 V DS = -25V 20s PULSE WIDTH 5.0 6.0 3.0 4.0 7.0 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7342D2 Power Mosfet Characteristics 1000 800 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = -3.1A 16 VDS = -48V VDS = -30V VDS = -12V C, Capacitance (pF) 600 Ciss 12 400 8 200 C oss C rss 10 100 4 0 1 0 0 10 20 30 40 - -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 10us 100us 1ms 10ms 10 -I D , Drain Current (A) I 1.4 10 TJ = 150 C TJ = 25 C 1 1 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 0.1 TC = 25 C TJ = 150 C Single Pulse 1 10 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7342D2 Power Mosfet Characteristics 3.5 VDS 3.0 RD VGS RG D.U.T. + -ID , Drain Current (A) 2.0 VGS Pulse Width 1 s Duty Factor 0.1 % 1.5 1.0 0.5 Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf VGS 0.0 25 50 75 100 125 150 10% TC , Case Temperature ( C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 1 10 100 PDM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com - 2.5 V DD 5 IRF7342D2 Power Mosfet Characteristics RDS ( on ) , Drain-to-Source On Resistance ( ) ( RDS(on), Drain-to -Source On Resistance ) 0.25 0.35 0.30 VGS = -4.5V 0.25 0.20 0.15 0.20 ID = -3.4A 0.10 0.15 VGS = -10V 0.10 0.05 3.0 5.0 7.0 9.0 11.0 13.0 15.0 0.05 0.0 4.0 8.0 12.0 16.0 -ID , Drain Current ( A ) -VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG QGS VG QGD 12V .2F .3F VGS -3mA Charge IG ID Current Sampling Resistors Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 www.irf.com + D.U.T. - VDS IRF7342D2 Power Mosfet Characteristics 2.0 100 1.8 80 ID = -250A -VGS(th) ( V ) Power (W) 1.6 60 1.4 40 1.2 20 1.0 -75 -50 -25 0 25 50 75 100 125 150 0 0.001 0.010 0.100 1.000 10.000 100.000 TJ , Temperature ( C ) Time (sec) Fig 15. Typical Vgs(th) Vs. Junction Temperature Fig 16. Typical Power Vs. Time www.irf.com 7 IRF7342D2 Schottky Diode Characteristics 10 0 1 00 T J= 150C Rev erse Curren t - I R (m A) 10 125C 100C 75C 0 .1 50C 1 Insta nt an eous Fo rw ard C urren t - I F (A) 0 .0 1 25C T J= 150C T J= 125C 10 T J= 25C 0 .0 01 0 10 20 30 40 50 60 Reverse V oltag e - V R (V ) Fig. 18 - Typical Values of Reverse Current Vs. Reverse Voltage 1000 (pF) T J un ction C a pa cita n ce - C T J= 25C 100 1 0 0.4 0 .8 1 .2 1 .6 2 2 .4 2 .8 Forw ard V olta ge Drop - V FM (V) 10 Fig. 17 - Maximum Forward Voltage Drop Characteristics 0 10 20 30 40 50 60 Reverse V olta g e - V R (V ) Fig. 19 - Typical Junction Capacitance Vs. Reverse Voltage 8 www.irf.com IRF7342D2 Schottky Diode Characteristics 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 0.1 0.00001 0.0001 SINGLE PULSE (THERMAL RESPONSE) 0.001 0.01 0.1 Notes: 1. Duty factor D =t 1 / t 2 2. Peak T = P DM x ZthJA + TA J 1 10 100 PDM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 180 Allowable Ambient Temprature - (C) 160 140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 RthJA = 62.5 C/W DC see note (4) Square wave ( D = 0.50) 80 % Rated V applied R Average Forward Current - F(AV) (A) I Fig.21 - Maximum Allowable Ambient Temp. Vs. Forward Current Note (4) Formula used: TC = TJ - (Pd + PdREV) x RthJA ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) ; PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR www.irf.com 9 IRF7342D2 SO-8 Package Details D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 1 2 3 4 .050 BAS IC .025 BAS IC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BAS IC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y K x 45 8X L 7 8X c NOT ES: 1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENSION: MILLIMET ER 3. DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD F OR S OLDERING T O A S UBST RATE. 3X 1.27 [.050] F OOTPRINT 8X 0.72 [.028] 6.46 [.255] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) DATE CODE (YWW) Y = LAS T DIGIT OF THE YEAR WW = WEEK LOT CODE PART NUMBER www.irf.com INTERNAT IONAL RECTIFIER LOGO 10 YWW XXXX F7101 IRF7342D2 SO-8 Tape and Reel T E R M IN A L N U M B E R 1 1 2 .3 ( .4 8 4 ) 1 1 .7 ( .4 6 1 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) F E E D D IR E C T IO N N O TES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 3 3 0 .0 0 (1 2 .9 9 2 ) MAX. 1 4 .4 0 ( .5 66 ) 1 2 .4 0 ( .4 88 ) N O TE S : 1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/01 www.irf.com 11 |
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