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| DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D049 BA592 Band-switching diode Preliminary specification File under Discrete Semiconductors, SC01 1998 May 07 Philips Semiconductors Preliminary specification Band-switching diode FEATURES * Small plastic SMD package * Low diode capacitance * Low diode forward resistance * Small inductance. APPLICATIONS * Low loss band-switching in VHF television tuners * Surface mount band-switching circuits. DESCRIPTION Planar, high performance band-switch diode in a small SMD plastic package (SOD323). PINNING SOD323 PIN 1 2 BA592 ndbook, halfpage 1 Top view Marking code: A2. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Ptot Tstg Tj PARAMETER continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature TS = 90 C CONDITIONS. , anode MIN. - - - -65 -65 DESCRIPTION cathode 2 MAM387 Fig.1 Simplified outline. MAX. 35 100 500 +150 +150 UNIT V mA mW C C 1998 May 07 2 Philips Semiconductors Preliminary specification Band-switching diode ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF IR Cd rD 1/gp LS Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS VALUE 120 PARAMETER forward voltage reverse current diode capacitance diode forward resistance reverse resistance series inductance CONDITIONS IF = 10 mA VR = 20 V VR = 1 V; f = 1 MHz; note 1 VR = 3 V; f = 1 MHz; note 1 IF = 3 mA; f = 100 MHz; note 1 IF = 10 mA; f = 100 MHz; note 1 VR = 1 V; f = 100 MHz; note 1 MIN. - - - 0.6 - - - - TYP. - - 0.92 0.85 0.45 0.36 100 2 BA592 MAX. 1 20 1.4 1.1 0.7 0.5 - - UNIT V nA pF pF k nH UNIT K/W GRAPHICAL DATA 10 rD () Cd (pF) 2 1.6 1.2 1 0.8 0.4 0.1 0.1 1 10 IF (mA) 100 0 0 10 20 VR (V) 30 f = 100 MHz; Tj = 25 C. f = 1 MHz; Tj = 25 C. Fig.2 Forward resistance as a function of forward current; typical values. Fig.3 Diode capacitance as a function of reverse voltage; typical values. 1998 May 07 3 Philips Semiconductors Preliminary specification Band-switching diode PACKAGE OUTLINE Plastic surface mounted package; 2 leads BA592 SOD323 A A1 E bp DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max. + 0.05 - 0.05 bp 0.40 0.25 c D 0.25 0.10 Note 1. The marking band indicate the cathode. OUTLINE VERSION SOD323 , Lp HE D 1 2 (1) Q c vMA A 0 1 2 mm scale E HE Lp Q v 0.2 1.8 1.6 1.35 1.15 2.7 2.3 0.45 0.15 0.25 0.15 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-12-10 1998 May 07 4 Philips Semiconductors Preliminary specification Band-switching diode DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BA592 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 May 07 5 Philips Semiconductors Preliminary specification Band-switching diode NOTES BA592 1998 May 07 6 Philips Semiconductors Preliminary specification Band-switching diode NOTES BA592 1998 May 07 7 |
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