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  Datasheet File OCR Text:
 LAB
MECHANICAL DATA Dimensions in mm (inches)
SEME
2N2222ACSM4
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
FEATURES
5.59 0.13 (0.22 0.005) 0.25 0.03 (0.01 0.001)
1.40 0.15 (0.055 0.006)
* SILICON PLANAR EPITAXIAL NPN TRANSISTOR * HERMETIC CERAMIC SURFACE MOUNT PACKAGE * CECC SCREENING OPTIONS
0.23 min. (0.009)
0.64 0.08 (0.025 0.003)
0.23 rad. (0.009) 3 2 1.27 0.05 (0.05 0.002)
3.81 0.13 (0.15 0.005)
4
1
* SPACE QUALITY LEVELS OPTIONS * HIGH SPEED SATURATED SWITCHING
1.02 0.20 (0.04 0.008)
2.03 0.20 (0.08 0.008)
APPLICATIONS:
LCC3 PACKAGE Underside View
PAD 1 - Collector PAD 2 - N/C PAD 3 - Emitter PAD 4 - Base
Hermetically sealed surface mount version of the popular 2N2222A for high reliability / space applications requiring small size and low weight devices.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)
VCBO VCEO VEBO IC PD PD Rja Tstg Semelab plc. Collector - Base Voltage Collector - Emitter Voltage (IB = 0) Emitter - Base Voltage (IB = 0) Collector Current Total Device Dissipation Derate above 50C Thermal Resistance Junction to Ambient Storage Temperature
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk
75V 40V 6V 800mA 350mW 2.0mW / C 350C/W -55 to 200C
Prelim. 4/99
LAB
ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated)
Parameter
VCEO(sus)* V(BR)CBO* V(BR)EBO* ICEX* ICBO* IEBO* IBL* VCE(sat)* VBE(sat)* Collector - Emitter Sustaining Voltage Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cut-off Current (IC = 0) Collector - Base Cut-off Current Emitter Cut-off Current (IC = 0) Base Current Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage
SEME
2N2222ACSM4
Test Conditions
IC = 10mA IC = 10A IE = 10A IB = 0 IE = 0 TC = 125C IC = 0 VCE = 60V IC = 150mA IC = 500mA IC = 150mA IC = 500mA IC = 0.1mA IC = 1mA VEB = 3V (off) VEB = 3V (off) IB = 15mA IB = 50mA IB = 15mA IC = 50mA VCE = 10V VCE = 10V VCE = 10V VCE = 10V VCE = 10V VCE = 1V VCE = 10V IC = 0 VCE = 60V VCB = 60V
Min.
40 75 6
Typ.
Max. Unit
V
V V 10 10 10 10 20 0.3 1 nA nA A nA nA V V
0.6 35 50 75 35 100 50 40
1.2 2
hFE*
DC Current Gain
IC = 10mA TA = -55C IC = 10mA IC = 150mA IC = 150mA IC = 500mA
-- 300
* Pulse test tp = 300s , 2%
DYNAMIC CHARACTERISTICS (Tcase = 25C unless otherwise stated)
Parameter
fT Cob Cib hfe Transition Frequency Output Capacitance Input Capacitance Small Signal Current Gain
Test Conditions
IC = 20mA VCB = 10V VBE = 0.5V IC = 1mA IC = 10mA VCE = 20V IE = 0 IC = 0 VCE = 10V VCE = 10V f = 100MHz f = 1.0MHz f = 1.0MHz f = 1kHz f = 1kHz
Min.
300
Typ.
Max. Unit
MHz 8 30 pF pF
50 75
300 375
SWITCHING CHARACTERISTICS (RESISTIVE LOAD) (Tcase = 25C unless otherwise stated)
Parameter
td tr ts tf Delay Time Rise Time Storage Time Fall Time
Test Conditions
VCC = 30V IC1 = 150mA VCC = 30V VBE = 0.5V (off) IB1 = 15mA IC = 150mA IB1 = IB2 = 15mA
Min.
Typ.
Max. Unit
10 25 225 60 ns ns ns ns
fT is defined as the frequency at which hFE extrapolates to unity.
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk
Prelim. 4/99


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