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| DISCRETE SEMICONDUCTORS DATA SHEET PMBF5484; PMBF5485; PMBF5486 N-channel field-effect transistors Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification N-channel field-effect transistors FEATURES * Low noise * Interchangeability of drain and source connections * High gain. handbook, halfpage PMBF5484; PMBF5485; PMBF5486 3 d s DESCRIPTION N-channel, symmetrical, silicon junction FETs in a surface-mountable SOT23 envelope. Intended for use in VHF/UHF amplifiers, oscillators and mixers. PINNING - SOT23 PIN 1 2 3 drain gate QUICK REFERENCE DATA SYMBOL VDS IDSS PARAMETER drain-source voltage drain current PMBF5484 PMBF5485 PMBF5486 Ptot VGS(off) total power dissipation gate-source cut-off voltage PMBF5484 PMBF5485 PMBF5486 Yfs common source transfer admittance PMBF5484 PMBF5485 PMBF5486 VDS = 15 V; VGS = 0; f = 1 kHz 3 3.5 4 6 7 8 mS mS mS up to Tamb = 25 C VDS = 15 V; ID = 1 nA -0.3 -0.5 -2 -3 -4 -6 V V V VDS = 15 V; VGS = 0 1 4 8 - 5 10 20 250 mA mA mA mW CONDITIONS MIN. - MAX. UNIT 25 V DESCRIPTION source Fig.1 Simplified outline and symbol. g 1 Top view 2 MAM385 MARKING CODES: PMBF5484: p6B PMBF5485: p6M PMBF5486: p6H April 1995 2 Philips Semiconductors Product specification N-channel field-effect transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGSO VGDO IG Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage gate-drain voltage DC forward gate current total power dissipation storage temperature junction temperature up to Tamb = 25 C (note 1) CONDITIONS PMBF5484; PMBF5485; PMBF5486 MIN. - - - - - -65 - MAX. 25 -25 -25 10 250 +150 150 V V V UNIT mA mW C C THERMAL RESISTANCE SYMBOL Rth j-a Note 1. Device mounted on an FR4 printed-circuit board. STATIC CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)GSS IDSS PARAMETER gate-source breakdown voltage drain current PMBF5484 PMBF5485 PMBF5486 IGSS VGSS VGS(off) reverse gate leakage current gate-source forward voltage gate-source cut-off voltage PMBF5484 PMBF5485 PMBF5486 Yfs common source transfer admittance PMBF5484 PMBF5485 PMBF5486 Yos common source output admittance PMBF5484 PMBF5485 PMBF5486 VDS = 15 V; VGS = 0 - - - 50 60 75 S S S VDS = 15 V; VGS = 0 3 3.5 4 6 7 8 mS mS mS VDS = 0; VGS = -15 V VDS = 0; IG = 1 mA VDS = 15 V; ID = 1 nA -0.3 -0.5 -2 -3 -4 -6 V V V CONDITIONS VDS = 0; IG = -1 A VDS = 15 V; VGS = 0 1 4 8 - - 5 10 20 -1 1 mA mA mA nA V MIN. -25 - MAX. V UNIT PARAMETER from junction to ambient (note 1) THERMAL RESISTANCE 500 K/W April 1995 3 Philips Semiconductors Product specification N-channel field-effect transistors DYNAMIC CHARACTERISTICS Tj = 25 C; VDS = 15 V; VGS = 0 SYMBOL Cis Cos Crs gis PARAMETER input capacitance output capacitance feedback capacitance common source input conductance PMBF5484 PMBF5485; PMBF5486 gfs common source transfer conductance PMBF5484 PMBF5485 PMBF5486 gos common source output conductance PMBF5484 PMBF5485; PMBF5486 Vn equivalent input noise voltage f = 100 MHz f = 400 MHz f = 100 Hz f = 100 MHz f = 400 MHz f = 400 MHz f = 100 MHz f = 400 MHz PMBF5484; PMBF5485; PMBF5486 CONDITIONS f = 1 MHz f = 1 MHz f = 1 MHz MIN. - - - 100 - 2.5 3 3.5 - - - TYP. - - - - - - - - - - 5 MAX. 5 2 1 - 1 - 1 1 75 100 - UNIT pF pF pF S mS mS mS mS S S nV/Hz handbook,25 halfpage MRC168 MRC169 I DSS (mA) handbook, 10 halfpage Y fs (mS) 8 20 15 6 10 4 5 2 0 0 2 4 6 -VGS(off) (V) 0 0 2 4 6 -VGS(off) (V) VDS = 15 V; Tj = 25 C; typical values. VDS = 15 V; Tj = 25 C; typical values. Fig.2 Drain current as a function of gate-source cut-off voltage. Fig.3 Common source transfer admittance as a function of gate-source cut-off voltage. April 1995 4 Philips Semiconductors Product specification N-channel field-effect transistors PMBF5484; PMBF5485; PMBF5486 handbook, halfpage 80 MRC167 2 handbook, halfpage ID (mA) 1.5 MRC170 Gos ( S) 60 VGS = 0 V 40 1 -0.25 V 20 0.5 -0.5 V 0 0 1 2 3 4 5 -VGS(off) (V) 6 0 0 4 8 12 VDS (V) 16 VDS = 15 V; Tj = 25 C; typical values. PMBF5484 Tj = 25 C. Fig.4 Common source output conductance as a function of gate-source cut-off voltage. Fig.5 Typical output characteristics. handbook, halfpage 8 MRC171 MRC172 8 handbook, halfpage V =0V GS ID (mA) 6 -0.5 V -1V V =0V GS ID (mA) 6 4 -1 V 4 2 -1.5 V 2 -2 V 0 0 0 4 8 12 V (V) DS PMBF5485 Tj = 25 C. 16 0 4 8 12 VDS (V) 16 PMBF5486 Tj = 25 C. Fig.6 Typical output characteristics. Fig.7 Typical output characteristics. April 1995 5 Philips Semiconductors Product specification N-channel field-effect transistors PMBF5484; PMBF5485; PMBF5486 MRC173 handbook, halfpage 4 handbook,10 halfpage MRC165 -I G ID (mA) 16 PMBF5486 (pA) 10 3 2 I D = 1 mA 12 10 10 8 PMBF5485 1 4 PMBF5484 0 -1.6 10 -1.2 -0.8 -0.4 VGS (V) 0 -2 0.1 mA I GSS 10 -1 0 4 8 12 16 20 VDG (V) VDS = 15 V; Tj = 25 C. Tj = 25 C. Fig.8 Typical input characteristics. Fig.9 Gate current as a function of drain-gate voltage, typical values. 300 handbook, halfpage P tot (mW) MRC166 1 handbook, halfpage C rs (pF) MRC158 0.8 200 0.6 0.4 100 0.2 00 50 100 Tamb ( C) o 150 0 -10 -8 -6 -4 -2 0 VGS (V) VDS = 15 V; Tj = 25 C. Fig.10 Power derating curve. Fig.11 Typical feedback capacitance. April 1995 6 Philips Semiconductors Product specification N-channel field-effect transistors PMBF5484; PMBF5485; PMBF5486 MRC157 3.5 handbook, halfpage Cis (pF) 3 2.5 2 100 handbook, halfpage gis , b is (mS) 10 b is MRC160 1 1.5 1 0.5 0 -10 0.01 10 g is 0.1 -8 -6 -4 -2 0 VGS (V) 100 f (MHz) 1000 VDS = 15 V; Tj = 25 C. VDS = 15 V; VGS = 0; Tamb = 25 C; typical values. Fig.12 Typical input capacitance. Fig.13 Common source input conductance. handbook, halfpage 100 MRC159 100 handbook, halfpage -g rs , -brs (mS) 10 -brs MRC162 g fs , -bfs (mS) 10 g fs 1 1 -b fs 0.1 -g rs 0.01 0.1 10 100 f (MHz) 1000 0.001 10 100 f (MHz) 1000 VDS = 15 V; VGS = 0; Tamb = 25 C; typical values. VDS = 15 V; VGS = 0; Tamb = 25 C; typical values. Fig.14 Common source transfer conductance. Fig.15 Common source feedback conductance. April 1995 7 Philips Semiconductors Product specification N-channel field-effect transistors PMBF5484; PMBF5485; PMBF5486 handbook, halfpage 100 MRC161 gos , bos (mS) 10 b os 1 0.1 g os 0.01 10 100 f (MHz) 1000 VDS = 15 V; VGS = 0; Tamb = 25 C; typical values. Fig.16 Common source output conductance. April 1995 8 Philips Semiconductors Product specification N-channel field-effect transistors PACKAGE OUTLINE Plastic surface mounted package; 3 leads PMBF5484; PMBF5485; PMBF5486 SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 April 1995 9 Philips Semiconductors Product specification N-channel field-effect transistors DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values PMBF5484; PMBF5485; PMBF5486 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1995 10 |
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